IRF IRG4RC10KDTR

PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
C
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
VCES = 600V
VCE(on) typ. = 2.39V
G
@VGE = 15V, IC = 5.0A
E
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
Max.
–––
–––
–––
0.3 (0.01)
3.3
7.0
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
12/30/00
IRG4RC10KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltageƒ
600 —
—
V
VGE = 0V, IC = 250µA
Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA
Collector-to-Emitter Saturation Voltage
— 2.39 2.62
IC = 5.0A
VGE = 15V
See Fig. 2, 5
— 3.25 —
V
IC = 9.0A
— 2.63 —
IC = 5.0A, TJ = 150°C
Gate Threshold Voltage
3.0
—
6.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance „
1.2 1.8
—
S
VCE = 50V, IC = 5.0A
Zero Gate Voltage Collector Current
—
—
250
µA
VGE = 0V, VCE = 600V
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop
—
1.5 1.8
V
IC = 4.0A
See Fig. 13
—
1.4 1.7
IC = 4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M /dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
19
2.9
9.8
49
28
97
140
0.25
0.14
0.39
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
32
100
310
0.56
7.5
220
29
7.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
29
IC = 5.0A
4.3
nC
VCC = 400V
See Fig.8
15
VGE = 15V
—
—
TJ = 25°C
ns
150
IC = 5.0A, VCC = 480V
210
VGE = 15V, RG = 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
0.48
See Fig. 9,10,14
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
—
TJ = 150°C,
See Fig. 10,11,14
—
IC = 5.0A, VCC = 480V
ns
—
VGE = 15V, RG = 100Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
TJ = 25°C See Fig.
57
TJ = 125°C
14
IF = 4.0A
5.2
A
TJ = 25°C See Fig.
6.7
TJ = 125°C
15
VR = 200V
60
nC
TJ = 25°C See Fig.
105
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
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IRG4RC10KD
1.6
LOAD CURRENT (A)
For both:
D uty cy cle: 50%
TJ = 125°C
T s ink = 55
90°C
G ate drive as specified
1.2
P ow e r Dis sip ation = 1.4 W
S q u a re w a v e :
6 0% of rate d
volta ge
0.8
I
0.4
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
10
1
1.0
TJ = 150 °C
V GE = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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7.0
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
5
10
V
= 50V
5µs PULSE WIDTH
CC
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4RC10KD
5.0
V
= 15V
80 us PULSE WIDTH
GE
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
I C = 10 A
4.0
3.0
IC = 5 A
I C = 2.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10KD
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
300
Cies
200
100
Coes
20
VGE , Gate-to-Emitter Voltage (V)
400
VCC = 400V
I C = 5.0A
16
12
8
4
C
res
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
0.38 I C = 5.0A
0.36
0.34
0.32
0.30
0
20
40
60
RG , Gate Resistance
80
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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8
12
16
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.40
4
QG , Total Gate Charge (nC)
100
50 Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
IC = 5 A
IC = 2.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4RC10KD
1.5
RG
TJ
VCC
VGE
= 50
Ohm
Ω
= 150° C
= 480V
= 15V
100
I C, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
2.0
1.0
0.5
VGE = 20V
T J = 125 o C
10
SAFE OPERATING AREA
0.0
1
0
2
4
6
8
10
1
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
TJ = 150°C
10
TJ = 125°C
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
F orward V oltage D rop - V F M(V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4RC10KD
50
14
I F = 8.0A
45
12
I F = 4.0A
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A
10
I F = 4.0A
Irr- ( A)
trr- (nC)
40
35
8
6
30
4
25
2
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
20
100
di f /dt - (A/µ s)
0
100
1000
1000
di f /dt - (A/µ s)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 2 00 V
T J = 1 25°C
T J = 2 5°C
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
160
I F = 8.0A
di (rec) M/dt- (A /µs)
I F = 4.0A
Qrr- (nC)
120
I F = 8.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µ s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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A
100
100
1000
di f /dt - (A/µ s )
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4RC10KD
Same ty pe
device as
D .U.T.
430µF
80%
of Vce
90%
D .U .T.
10%
Vge
VC
90%
td(off)
10%
IC 5%
Fig. 18a - Test Circuit for Measurement of
tf
tr
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t d(on)
t=5µs
Eon
Eoff
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Ic ddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
Vce
E on = V
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
VVd
d idIc
d t dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4RC10KD
V g G AT E SIG NA L
DE VIC E U ND E R T E ST
CU R RE NT D .U .T.
VO L TA G E IN D.U .T.
CU R RE NT IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
D.U.T.
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.3 8 (.0 94 )
2.1 9 (.0 86 )
6.7 3 (.2 65 )
6.3 5 (.2 50 )
-A1 .2 7 ( .0 50)
0 .8 8 ( .0 35)
5 .46 (.21 5)
5 .21 (.20 5)
1.1 4 ( .0 45)
0.8 9 ( .0 35)
0.58 (.02 3)
0.46 (.01 8)
4
6.45 (.24 5)
5.68 (.22 4)
6.2 2 (.2 45 )
5.9 7 (.2 35 )
1 .0 2 (.04 0)
1 .6 4 (.02 5)
1
2
10 .42 (.41 0)
9.4 0 (.3 70 )
0.51 (.0 2 0)
M IN .
-B 1 .5 2 ( .06 0)
1 .1 5 ( .04 5)
3X
1.1 4 (.0 45)
2 X 0.7 6 (.0 30)
L E A D A S S IG N M E NT S
1 - G A TE
3
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
0.89 (.0 35 )
0.64 (.0 25 )
0 .2 5 (.0 10 )
2 - D R A IN
3 - SOURCE
4 - D R A IN
M A M B
0 .5 8 (.0 23)
0 .4 6 (.0 18)
3 - EMITTER
4 - COLLECTOR
2.28 (.0 90 )
4.57 ( .18 0)
N OT E S:
1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82.
2 C O N TR O LL ING D IM E N S IO N : IN C H.
3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A.
4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP ,
S O L D ER D IP M A X. + 0.16 (.0 06 ).
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9
IRG4RC10KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
Tape & Reel Information
TO-252AA
TR
TRR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
TR L
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C T IO N
NOTES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R .
2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
1 3 IN C H
16 m m
NOTES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
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