IRF IRG4RC10UD

PD 91571A
IRG4RC10UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
VCES = 600V
VCE(on) typ. = 2.15V
G
@VGE = 15V, IC = 5.0A
E
tf (typ.) = 140ns
n-cha nn el
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and Diode
losses
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
0.3 (0.01)
3.3
7.0
50
–––
Units
°C/W
g (oz)
Details of note Q through T are on the last page
www.irf.com
1
12/30/00
IRG4RC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 600
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.54
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15
— 2.61
— 2.30
Gate Threshold Voltage
3.0
—
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
— -8.7
gfe
Forward Transconductance T
2.8 4.2
Zero Gate Voltage Collector Current
—
—
ICES
—
—
V FM
Diode Forward Voltage Drop
—
1.5
—
1.4
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V/°C VGE = 0V, IC = 1.0mA
2.6
IC = 5.0A
V GE = 15V
—
V
IC = 8.5A
See Fig. 2, 5
—
IC = 5.0A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 5.0A
250
µA
VGE = 0V, VCE = 600V
1000
VGE = 0V, VCE = 600V, TJ = 150°C
1.8
V
IC = 4.0A
See Fig. 13
1.7
IC = 4.0A, TJ = 125°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
t rr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Q rr
Diode Reverse Recovery Charge
di (rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
15
2.6
5.8
40
16
87
140
0.14
0.12
0.26
38
18
95
250
0.45
7.5
270
21
3.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
22
IC = 5.0A
4.0
nC
VCC = 400V
See Fig. 8
8.7
VGE = 15V
—
TJ = 25°C
—
ns
IC = 5.0A, VCC = 480V
130
VGE = 15V, RG = 100Ω
210
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 18
0.33
—
TJ = 150°C, See Fig. 11, 18
—
ns
IC = 5.0A, VCC = 480V
—
VGE = 15V, RG = 100Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
TJ = 25°C See Fig.
57
TJ = 125°C
14
IF = 4.0A
5.2
A
TJ = 25°C See Fig.
6.7
TJ = 125°C
15
VR = 200V
60
nC
TJ = 25°C See Fig.
105
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
www.irf.com
IRG4RC10UD
1.6
For both:
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
55°C
G ate drive as specified
P ow e r Dis sip ation = 1.4 W
LOAD CURRENT (A)
1.2
S q u a re w a v e :
6 0% of rate d
volta ge
0.8
I
0.4
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
1
V
= 15V
20µs PULSE WIDTH
GE
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
TJ = 150 o C
TJ = 25 o C
V
= 50V
5µs PULSE WIDTH
CC
1
5
6
7
8
9
10
11
12
13
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4RC10UD
10
5.0
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
8
6
4
2
0
25
50
75
100
125
150
I C = 10 A
4.0
3.0
I C = 5.05 A
I C = 2.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4RC10UD
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
400
Cies
300
200
C
oes
100
Cres
20
VGE , Gate-to-Emitter Voltage (V)
500
10
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.25
0.20
60
70
80
90
, Gate
Resistance(Ohm)
(Ω)
RG R, GGate
Resistance
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
8
12
16
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 5.0A
50
4
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.30
VCC = 400V
I C = 5.0A
16
0
1
100
100 Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
I
5A
C = 5.0A
IC = 2.5 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4RC10UD
RG
TJ
1.2 VCC
VGE
100
= 100Ω
Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.4
1.0
0.8
0.6
0.4
0.2
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
0.0
0
2
4
6
8
1
10
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
TJ = 150°C
10
TJ = 125°C
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
FForward
orward VVoltage
oltage DDrop
rop -- VVFM
V) )
F M((V
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
www.irf.com
IRG4RC10UD
50
14
I F = 8.0A
45
12
I F = 4.0A
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A
10
I F = 4.0A
Irr- ( A)
trr- (nC)
40
35
8
6
30
4
25
2
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
20
100
di f /dt - (A/µ s)
0
100
1000
1000
di f /dt - (A/µ s)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 2 00 V
T J = 1 25°C
T J = 2 5°C
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
160
120
I F = 8.0A
di (rec) M/dt- (A /µs)
Qrr- (nC)
I F = 8.0A
I F = 4.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µ s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
www.irf.com
A
100
100
1000
di f /dt - (A/µ s )
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4RC10UD
90% Vge
Same ty pe
device as
D .U.T.
+Vge
Vce
430µF
80%
of Vce
D .U .T.
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
td (o ff)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1 + 5 µ S
V c e icIcd tdt
Vce
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Ic ddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIc
d t dt
E o n = VVce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
VVd
d idIc
d t dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
www.irf.com
IRG4RC10UD
V g G AT E SIG NA L
DE VIC E U ND E R T E ST
CU R RE NT D .U .T.
VO L TA G E IN D.U .T.
CU R RE NT IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
D.U.T.
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.3 8 (.0 94 )
2.1 9 (.0 86 )
6.7 3 (.2 65 )
6.3 5 (.2 50 )
-A1 .2 7 ( .0 50)
0 .8 8 ( .0 35)
5 .46 (.21 5)
5 .21 (.20 5)
1.1 4 ( .0 45)
0.8 9 ( .0 35)
0.58 (.02 3)
0.46 (.01 8)
4
6.45 (.24 5)
5.68 (.22 4)
6.2 2 (.2 45 )
5.9 7 (.2 35 )
1 .0 2 (.04 0)
1 .6 4 (.02 5)
10 .42 (.41 0)
9.4 0 (.3 70 )
1
2
0.51 (.0 2 0)
M IN .
-B 1 .5 2 ( .06 0)
1 .1 5 ( .04 5)
3X
1.1 4 (.0 45)
2 X 0.7 6 (.0 30)
L E A D A S S IG N M E NT S
1 - G A TE
3
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
0.89 (.0 35 )
0.64 (.0 25 )
0 .2 5 (.0 10 )
2 - D R A IN
3 - SOURCE
4 - D R A IN
0 .5 8 (.0 23)
0 .4 6 (.0 18)
M A M B
3 - EMITTER
4 - COLLECTOR
N OT E S:
2.28 (.0 90 )
4.57 ( .18 0)
1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82.
2 C O N TR O LL ING D IM E N S IO N : IN C H.
3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A.
4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP ,
S O L D ER D IP M A X. + 0.16 (.0 06 ).
www.irf.com
9
IRG4RC10UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
Tape & Reel Information
TO-252AA
TR
TRR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
TR L
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C T IO N
NOTES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R .
2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
1 3 IN C H
16 m m
NOTES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
www.irf.com