IRF IRG4PC50KD

PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
●
●
●
●
Short Circuit Rated
UltraFast IGBT
C
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10µs @125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.84V
G
@VGE = 15V, IC = 30A
E
n -c h a n n e l
Benefits
●
●
●
Generation 4 IGBTs offer highest efficiencies available
HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
52
30
104
104
25
280
10
± 20
200
78
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RqJC
RqJC
RqCS
RqJA
Wt
www.irf.com
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
0.64
0.83
—
40
—
Units
°C/W
g (oz)
1
12/3/98
IRG4PC50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage ➂
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
DVGE(th)/DTJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance ➃
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
DV(BR)CES/DTJ
Min.
600
—
—
—
—
3.0
—
17
—
—
—
—
—
Typ.
—
0.47
1.84
2.19
1.79
—
-12
24
—
—
1.3
1.2
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1.0mA
2.2
IC = 30A
VGE = 15V
—
V
IC = 52A
see figures 2, 5
—
IC = 25A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C V CE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 30A
250
µA
VGE = 0V, VCE = 600V
6500
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 25A
see figure 13
1.5
IC = 25A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
200
25
85
63
49
150
95
1.61
0.84
2.45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
61
46
310
170
3.53
13
3200
370
95
50
105
4.5
8.0
112
420
250
160
Max. Units
Conditions
300
IC = 30A
38
nC VCC = 400V
see figure 8
127
VGE = 15V
—
—
TJ = 25°C
ns
220
IC = 30A, VCC = 480V
140
VGE = 15V, RG = 5.0W
—
Energy losses include "tail"
—
mJ and diode reverse recovery
3.0see figures 9,10,18
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10W , VCPK < 500V
—
TJ = 150°C,
see figures 11,18
—
IC = 30A, VCC = 480V
ns
—
VGE = 15V, RG = 5.0W
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
see figure 7
—
ƒ = 1.0MHz
75
ns
TJ = 25°C see figure
160
TJ = 125°C
14
IF = 25A
10
A
TJ = 25°C see figure
15
TJ = 125°C
15
VR = 200V
375
nC TJ = 25°C see figure
1200
TJ = 125°C
16
di/dt 200A/µs
—
A/µs TJ = 25°C see figure
—
TJ = 125°C
17
www.irf.com
IRG4PC50KD
35
F or b oth:
LOAD CURRENT (A)
30
D uty c y c le : 50%
T J = 12 5° C
T sink = 90 °C
G a te d riv e a s s pe c ified
25
P ow er D is s ipation = 40 W
S q u a re w a v e :
20
60% of rated
voltage
15
I
10
Id e a l d io d es
5
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 ° C
100
150°C
TJ = 150 ° C
10
V GE = 15V
20µs PULSE WIDTH
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PC50KD
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
60
50
40
30
20
10
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 60 A
2.0
IC = 30 A
IC = 15 A
1.0
-60 -40 -20
TC , Case Temperature (° C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC50KD
VGE =
Cies =
Cres =
Coes =
C, Capacitance (pF)
4000
0V,
f = 1MHz
Cge + Cgc , Cce SHORTED
Cgc
Cce + Cgc
Cies
3000
2000
1000
Coes
20
VGE , Gate-to-Emitter Voltage (V)
5000
16
12
8
4
Cres
0
1
0
10
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
V CC = 480V
V GE = 15V
TJ = 25 ° C
4.0 I C = 30A
3.5
3.0
2.5
2.0
20
30
GResistance (W) (O
RG, Gate
40
80
120
160
50
W
RG =5.0
Ohm
VGE = 15V
VCC = 480V
IC = 60 A
10
IC = 30 A
IC = 15 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
)
TJ , Junction Temperature (° C )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
www.irf.com
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
4.5
10
40
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
0
VCC = 400V
I C = 30A
5
IRG4PC50KD
RG
TJ
VCC
10
VGE
1000
W
= 5.0
Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
12
8
6
VGE = 20V
T J = 125 o C
100
4
2
SAFE OPERATING AREA
0
0
10
20
30
40
50
60
10
70
1
I C , Collector-to-emitter Current (A)
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
140
V R = 200V
T J = 125°C
T J = 25°C
120
TJ = 150 °C
TJ = 125 °C
10
100
TJ = 25 °C
t rr - (ns)
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
100
80
I F = 50A
I F = 25A
60
IF = 10A
40
1
0.6
1.0
1.4
1.8
2.2
2.6
F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
6
20
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
www.irf.com
IRG4PC50KD
1500
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
I F = 5 0A
Q R R - (n C )
I IR R M - (A )
1200
I F = 25A
10
I F = 10A
900
I F = 50A
600
I F = 2 5A
300
I F = 10A
1
100
0
100
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
d i f /d t - (A /µ s)
d i f /d t - (A /µ s)
Fig. 16 - Typical Stored Charge vs. dif/dt
10000
d i(re c)M /d t - (A /µ s)
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
1000
I F = 10A
I F = 25A
I F = 50A
Mechanical drawings, Appendix A
Test Circuit diagrams, Appendix B
Switching Loss Waveforms, Appendix C
www.irf.com
100
100
1000
d i f /d t - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4PC50KD
Same type
device as
D .U.T.
90%
430µF
80%
of Vce
10%
Vge
D .U .T.
VC
90%
t d(off)
10%
IC 5%
tf
tr
Fig. 18a - Test Circuit for Measurement of
t d(on)
t=5µs
Eon
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T .
10% + V g
trr
Q rr =
Ic
trr
id
Ic dtdt
tx
∫
+V g
tx
10% V c c
10% Irr
Vcc
D U T V O LT A G E
AND CURRENT
Vce
V pk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
tr
td(on)
5% V c e
t1
∫
t2
c e ieIc
dt dt
E on = VVce
t1
t2
E rec =
D IO D E R E V E R S E
RECOVERY ENERG Y
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫ Vd Ic dt
t4
V d id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
www.irf.com
IRG4PC50KD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
800V
4 X IC @25°C
0 - 800V
50V
600 0µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
www.irf.com
Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4PC50KD
Notes:
 Repetitive rating: VG E=20V; pulse width limited by maximum junction temperature
(figure20)
‚ V C C=80%(VCES),VG E=20V, L=10µH, RG = 5.0W (figure 19)
ƒ Pulse width £ 80µs; duty factor £ 0.1%.
„ Pulse width 5.0µs, single shot.
Case Outline — TO-247AC
3.65 (.14 3)
3.55 (.14 0)
0.25 (.01 0) M D B M
15 .90 (.62 6)
15 .30 (.60 2)
-B-
-A5.50 (.217)
20 .30 (.80 0)
19 .70 (.77 5)
2X
1
2
-D-
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
4.50 (.177)
LE A D
1234-
3
-C-
*
14 .80 (.583)
14 .20 (.559)
2.40 (.09 4)
2.00 (.07 9)
2X
5.45 (.21 5)
2X
4.3 0 (.1 70)
3.7 0 (.1 45)
3X
1.4 0 (.0 56)
1.0 0 (.0 39)
0.2 5 (.0 10) M
3.40 (.13 3)
3.00 (.11 8)
NOTES:
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14.5M , 1982.
2 C O N T R O LLIN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 47A C .
*
0.80 (.03 1)
0.40 (.01 6)
2.60 (.10 2)
2.20 (.08 7)
A S S IG N M E N T S
GATE
C O LLE C T O R
E M IT T E R
C O LLE C T O R
LO N G E R L E A D E D (20m m )
V E R S IO N A V A ILA B LE (T O -247 A D )
T O O R D E R A D D "-E " S U F F IX
TO PART NUMBER
3X
C A S
CONFORM S TO JEDEC OU TLINE TO-247AC (TO-3P)
D im ensio ns in M illim ete rs a nd (In ch es)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 12/98
10
www.irf.com