PD - 94192C HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 10 5.0 20 15 0.12 ± 16 20 10 7.5 2.2 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 09/06/02 IRL7Y1905C Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 50 — — V VGS = 0V, ID = 250µA — 0.058 — V/°C Reference to 25°C, ID = 1.0mA — — 0.125 Ω 1.0 1.1 — — — — — — 2.0 — 10 25 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 13 2.0 3.0 8.0 96 23 67 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 230 70 8.0 350 — — VGS = 10V, ID = 10A ➃ VDS = VGS, ID = 250µA VDS = 1.0V, IDS = 200mA ➃ VDS = 2.5V ,VGS=0V VDS = 2.5V, VGS = 0V, TJ =60°C VGS = 2.5V VGS = -2.5V VGS =10V, ID =10A VDS = 44V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 27.5V, ID = 10A, VGS = 5.0V, RG = 12Ω ns Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) nH pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 10 20 1.3 64 85 Test Conditions A V ns nC Tj = 25°C, IS = 10A, VGS = 0V ➃ Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs VDD ≤30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 8.33 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL7Y1905C 100 VGS TOP 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.2V 10 VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.2V TOP ID , Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 2.2V 1 20µs PULSE WIDTH Tj = 25°C 10 2.2V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α ) 2.5 T J = 25°C T J = 150°C VDS = 15V 15 20µs PULSE WIDTH 1 2.0 2.5 3.0 3.5 4.0 4.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 10 1 VDS, Drain-to-Source Voltage (V) ID = 10A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL7Y1905C VGS = Ciss = Crss = Coss = 400 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C, Capacitance (pF) Ciss 300 200 C oss 100 Crss 20 VGS , Gate-to-Source Voltage (V) 500 0 1 10 ID = 10A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 4 VDS , Drain-to-Source Voltage (V) 12 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 ISD , Reverse Drain Current (A) 8 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.4 V GS = 0 V 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 44V VDS = 27V VDS = 11V 1.6 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL7Y1905C 10.0 RD VDS VGS I D , Drain Current (A) 8.0 D.U.T. RG + -VDD 6.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 0.10 1 PDM 0.05 0.02 0.01 0.1 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL7Y1905C 15V L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 40 TOP BOTTOM 30 20 10 0 25 V (B R )D S S ID 4.5A 6.3A 10A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL7Y1905C Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 10A, di/dt ≤ 230 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.4mH Peak IAS = 10A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 50V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA Lead Formed Option 0.13 [.005] A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 13.63 [.537] 13.39 [.527] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 10.92 [.430] 10.42 [.410] 1 2 B 5.08 [.200] 4.83 [.190] 3.81 [.150] 3.56 [.140] Ø 16.89 [.665] 16.39 [.645] 10.66 [.420] 10.42 [.410] 18.29 [.720] 17.27 [.680] 1 3 C 0.71 [.028] MAX. C 0.13 [.005] A 10.66 [.420] 10.42 [.410] 1.14 [.045] 0.89 [.035] 2 3 2X B R 1.52 [.060] MIN. (4.37 [.172]) 0.889 [.035] MAX. 2.54 [.100] 15.88 [.625] 12.70 [.500] 1.14 [.045] 0.89 [.035] 3X Ø 5 0.88 [.035] 0.64 [.025] 0.25 [.010] C A 3.17 [.125] 2.93 [.115] B NOT ES : 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] C A 3.05 [.120] B NOTES : NOT ES : 1. 2. 3. 4. 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONTROLLING DIMENS ION: INCH. THIS OUTLINE IS A MODIFIED T O-257AA JEDEC OUTLINE. 5 LEADS ARE S OLDER DIPPED TO THIS DIMENS ION. CERAMIC EYELETS PIN ASS IGNMENT S 6. LEADS TO BE T RIMMED TO 10.795 [.425] ± 0.635 [.025] BEFORE LEADFORMING. 1 = GATE 2 = DRAIN 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/02 www.irf.com 7