IRF IRL7Y1905C

PD - 94192C
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL7Y1905C
50V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRL7Y1905C
50V
RDS(on)
0.125Ω
ID
10A
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
10
5.0
20
15
0.12
± 16
20
10
7.5
2.2
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
C
g
For footnotes refer to the last page
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1
09/06/02
IRL7Y1905C
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
50
—
—
V
VGS = 0V, ID = 250µA
—
0.058
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.125
Ω
1.0
1.1
—
—
—
—
—
—
2.0
—
10
25
V
S( )
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
13
2.0
3.0
8.0
96
23
67
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
230
70
8.0
350
—
—
VGS = 10V, ID = 10A ➃
VDS = VGS, ID = 250µA
VDS = 1.0V, IDS = 200mA ➃
VDS = 2.5V ,VGS=0V
VDS = 2.5V,
VGS = 0V, TJ =60°C
VGS = 2.5V
VGS = -2.5V
VGS =10V, ID =10A
VDS = 44V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 27.5V, ID = 10A,
VGS = 5.0V, RG = 12Ω
ns
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
nH
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
10
20
1.3
64
85
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 10A, VGS = 0V ➃
Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs
VDD ≤30V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
8.33
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL7Y1905C
100
VGS
TOP
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.2V
10
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.2V
TOP
ID , Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
2.2V
1
20µs PULSE WIDTH
Tj = 25°C
10
2.2V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α )
2.5
T J = 25°C
T J = 150°C
VDS = 15V
15
20µs PULSE WIDTH
1
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
10
1
VDS, Drain-to-Source Voltage (V)
ID = 10A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL7Y1905C
VGS =
Ciss =
Crss =
Coss =
400
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
C, Capacitance (pF)
Ciss
300
200
C
oss
100
Crss
20
VGS , Gate-to-Source Voltage (V)
500
0
1
10
ID = 10A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
4
VDS , Drain-to-Source Voltage (V)
12
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
8
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 44V
VDS = 27V
VDS = 11V
1.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL7Y1905C
10.0
RD
VDS
VGS
I D , Drain Current (A)
8.0
D.U.T.
RG
+
-VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
0.10
1
PDM
0.05
0.02
0.01
0.1
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL7Y1905C
15V
L
VDS
D .U .T.
RG
IA S
VGS
20V
D R IV E R
+
- VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
40
TOP
BOTTOM
30
20
10
0
25
V (B R )D S S
ID
4.5A
6.3A
10A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL7Y1905C
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 10A, di/dt ≤ 230 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 0.4mH
Peak IAS = 10A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 50V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
Lead Formed Option
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
5.08 [.200]
4.83 [.190]
13.63 [.537]
13.39 [.527]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
10.92 [.430]
10.42 [.410]
1
2
B
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
Ø
16.89 [.665]
16.39 [.645]
10.66 [.420]
10.42 [.410]
18.29 [.720]
17.27 [.680]
1
3
C
0.71 [.028]
MAX.
C
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
1.14 [.045]
0.89 [.035]
2
3
2X
B
R 1.52 [.060]
MIN.
(4.37 [.172])
0.889 [.035]
MAX.
2.54 [.100]
15.88 [.625]
12.70 [.500]
1.14 [.045]
0.89 [.035]
3X Ø
5
0.88 [.035]
0.64 [.025]
0.25 [.010]
C A
3.17 [.125]
2.93 [.115]
B
NOT ES :
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOTES :
NOT ES :
1.
2.
3.
4.
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA.
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
CONTROLLING DIMENS ION: INCH.
THIS OUTLINE IS A MODIFIED T O-257AA JEDEC OUTLINE.
5 LEADS ARE S OLDER DIPPED TO THIS DIMENS ION.
CERAMIC EYELETS
PIN ASS IGNMENT S
6. LEADS TO BE T RIMMED TO 10.795 [.425] ± 0.635 [.025] BEFORE LEADFORMING.
1 = GATE
2 = DRAIN
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/02
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