PD - 93978 HEXFET® POWER MOSFET SURFACE MOUNT (LCC-28) IRFEA240 200V, N-CHANNEL Product Summary Part Number IRFEA240 RDS(on) 0.18Ω BVDSS 200V ID 11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. LCC-28 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 11 7.0 44 50 0.4 ±20 80 11 5.0 5.0 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (for 5 s) 0.89 g For footnotes refer to the last page www.irf.com 1 10/20/00 IRFEA240 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 200 — — V — 0.25 — V/°C — — 0.18 Ω 2.0 6.0 — — — — — — 4.0 — 25 250 V S( ) Test Conditions VGS = 0V, ID = 1mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 11A ➃ nC VDS = VGS, ID = 250µA VDS = 25V, IDS = 11A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 11A VDS = 100V ns VDD = 100V, ID = 11A RG = 9.1Ω Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 84 17 41 25 196 80 130 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1340 434 134 — — — nA nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 11 44 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.5 470 6.5 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 11A, VGS = 0V ➃ Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 2.5 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFEA240 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 4.5V 1 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C 1 V DS = 15 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 4.0 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 11A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFEA240 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2000 Ciss 1500 Coss 1000 Crss 500 ID = 11 A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 20 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 ID, Drain-to-Source Current (A) 1000 10 TJ = 25 ° C 1 V GS = 0 V 0.7 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150 ° C 0.1 0.2 1.2 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 20 VGS , Gate-to-Source Voltage (V) 3000 2.2 10 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFEA240 12 VGS 10 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 8 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 4 Fig 10a. Switching Time Test Circuit VDS 2 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFEA240 15V L VDS D .U .T. RG IA S 10V 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 200 TOP 160 BOTTOM ID 5.0A 7.0A 11A 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFEA240 Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 11A, di/dt ≤ 270 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L=1.25mH Peak IAS = 11A, RG= 25Ω Pulse width ≤ 400 µs; Duty Cycle ≤ 2% VDD ≤ 200V, TJ ≤ 150°C Case Outline and Dimensions — LCC-28 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 www.irf.com 7