PD - 94167A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 10 6.6 40 125 1.0 ±20 205 10 12.5 9.6 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 08/07/01 IRFY11N50CMA Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 500 — — V VGS = 0V, ID = 250µA — 0.59 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 6.0 — — — — — — — — 0.56 0.65 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 58 15 26 22 71 47 43 — VGS = 10V, ID = 6.6A ➃ VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS ≥ 15V, IDS = 6.6A ➃ VDS = 500V ,VGS=0V VDS = 400V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 10A VDS = 400V Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1390 216 12 — — — V S( ) Ω µA nA nC VDD = 250V, ID = 10A, VGS =10V, RG = 9.1Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 10 40 1.5 660 4.5 Test Conditions A V ns µC Tj = 25°C, IS = 10A, VGS = 0V ➃ Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFY11N50CMA 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 0.1 4.5V 20µs PULSE WIDTH T = 25 C 1 10 1 4.5V 0.1 10 100 3.0 TJ = 25 ° C 1 V DS =15 50V 20µs PULSE WIDTH 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 6.0 10 100 Fig 2. Typical Output Characteristics 100 5.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 4.0 ° J 0.01 0.1 VDS , Drain-to-Source Voltage (V) 10 20µs PULSE WIDTH T = 150 C ° J 0.01 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 10A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFY11N50CMA VGS = Ciss = Crss = Coss = Ciss 1600 1200 C oss 800 C rss 400 20 ID = 10A 1 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 150 ° C TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 400V VDS = 250V VDS = 100V 0 0 ISD , Reverse Drain Current (A) C, Capacitance (pF) 2000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS , Gate-to-Source Voltage (V) 2400 1.8 10 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 10ms 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFY11N50CMA 10.0 RD VDS VGS I D , Drain Current (A) 8.0 D.U.T. RG + -VDD 6.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRFY11N50CMA 400 TOP BOTTOM 300 200 100 0 25 V (B R )D S S ID 4.5A 6.3A 10A 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFY11N50CMA Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 10A, di/dt ≤ 350 A/µs, maximum junction temperature. VDD = 50 V, Starting TJ = 25°C, L= 4.0mH Peak IAS = 10A, VGS =10 V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 500V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7