IRF IRL5NJ7404

PD - 94052A
LOGIC LEVEL
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ7404
20V, P-CHANNEL
Product Summary
Part Number
BVDSS
IRL5NJ7404
-20V
RDS(on)
0.04Ω
ID
-11A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
Logic Level Gate Drive
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
-11
-7.0
-44
50
0.4
±12
157
-11
5.0
0.7
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5 s)
1.0 (Typical)
C
g
For footnotes refer to the last page
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1
8/8/01
IRL5NJ7404
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
-20
—
—
V
—
0.14
—
V/°C
—
—
-0.7
9.0
—
—
—
—
—
—
—
—
0.04
0.07
—
—
-1.0
-25
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
50
5.5
21
20
150
65
90
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1450
830
430
—
—
—
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -11A ➃
VGS = -2.7V, ID = -7.0A
VDS = VGS, ID = -250µA
VDS = -15V, IDS = -3.2A ➃
VDS = -16V ,VGS=0V
VDS = -16V,
VGS = 0V, TJ =125°C
VGS = -12V
VGS = 12V
VGS =-4.5V, ID = -3.2A
VDS = -16V
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = -10V, ID = -3.2A,
VGS =-4.5V, RG = 6.0Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = -15V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-11
-44
-1.0
80
100
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -3.2A, VGS = 0V ➃
Tj = 25°C, IF = -3.2A, di/dt ≤ 100A/µs
VDD ≤ -20V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
2.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL5NJ7404
100
VGS
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.7V
- 2.0V
-1.75V
BOTTOM -1.5V
10
1
-1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
-1.75V
BOTTOM -1.5V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
10
-1.5V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
15
V DS = -15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
2.5
100
Fig 2. Typical Output Characteristics
100
2.0
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
1.5
1
ID = -11A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL5NJ7404
VGS =
Ciss =
Crss =
Coss =
2000
1500
1000
500
10
1
10
ID = -3.2A
VDS = -16V
VDS = -10V
VDS = -4V
8
6
4
2
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2500
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
3000
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
1.6
10
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
-V DS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRL5NJ7404
12
RD
V DS
-ID , Drain Current (A)
10
VGS
D.U.T.
RG
8
+
V DD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
L
VDS
-
D .U .T
RG
+
IA S
VGS
-20V
tp
VVDS
DD
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRL5NJ7404
400
ID
-5.0A
-7.0A
BOTTOM -11A
TOP
300
200
100
0
25
IAS
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-4.5V
-12V
12V
.2µF
.3µF
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL5NJ7404
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ -11A, di/dt ≤ -84 A/µs,
maximum junction temperature.
‚ VDD = -15 V, Starting TJ = 25°C, L= 2.6mH
Peak IAS = -11A, VGS =-10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ -20V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
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