ETC IRF7F3704

PD - 94340
HEXFET® POWER MOSFET
THRU-HOLE (TO-39)
IRF7F3704
20V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF7F3704
20V
RDS(on)
0.05Ω
ID
12A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-39
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
10.6
48
20
0.16
±20
190
12
2.0
0.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
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1
11/02/01
IRF7F3704
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
20
—
—
V
VGS = 0V, ID = 250µA
—
0.024
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
1.0
15
—
—
—
—
—
—
—
—
0.05
0.055
3.0
—
20
100
Ω
VGS = 10V, ID = 10.6A ➃
VGS = 4.5V, ID = 10.6A
VDS = VGS, ID = 250µA
VDS =10V, IDS = 10.6A ➃
VDS = 20V ,VGS=0V
VDS = 16V,
VGS = 0V, TJ =125°C
VGS =-20V
VGS = -20V
VGS =4.5V, ID = 12A
VDS = 10V
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
22
10
5.0
14
255
6.0
15
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1860
990
55
—
—
—
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 10V, ID = 12A,
VGS = 4.5V, RG = 1.8Ω
ns
nH
l
pF
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 10V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Min Typ Max Units
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
12*
48
1.4
50
60
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 12A, VGS = 0V ➃
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 16V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
6.25
175
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF7F3704
100
100
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
3.5V
10
3.5V
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
15
V DS = 15V
20µs PULSE WIDTH
5.0
5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
4.5
100
Fig 2. Typical Output Characteristics
100
4.0
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.5
1
ID = 12A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7F3704
VGS =
Ciss =
Crss =
Coss =
Ciss
2000
1600
Coss
1200
800
400
10
ID = 12A
VDS = 16V
VDS = 10V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
0
100
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
TJ = 25 ° C
1
V GS = 0 V
1.2
1.6
2.0
2.4
2.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
0.8
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
TJ = 150 ° C
0.1
0.4
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2400
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
VGS , Gate-to-Source Voltage (V)
2800
3.2
100µs
10
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7F3704
20
V DS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
16
RD
D.U.T.
RG
+
-V DD
VGS
12
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
0.1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7F3704
1 5V
D R IV E R
L
VD S
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
EAS , Single Pulse Avalanche Energy (mJ)
500
TOP
400
BOTTOM
ID
5.4A
7.6A
12A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
QG
4.5V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7F3704
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 12A, di/dt ≤ 80A/µs,
maximum junction temperature.
‚ VDD = 15 V, Starting TJ = 25°C, L= 2.7mH
Peak IAS =12A, VGS = 10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 20V, TJ ≤ 150°C
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/01
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