PD - 94340 HEXFET® POWER MOSFET THRU-HOLE (TO-39) IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.05Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-39 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 12* 10.6 48 20 0.16 ±20 190 12 2.0 0.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 11/02/01 IRF7F3704 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 20 — — V VGS = 0V, ID = 250µA — 0.024 — V/°C Reference to 25°C, ID = 1.0mA — — 1.0 15 — — — — — — — — 0.05 0.055 3.0 — 20 100 Ω VGS = 10V, ID = 10.6A ➃ VGS = 4.5V, ID = 10.6A VDS = VGS, ID = 250µA VDS =10V, IDS = 10.6A ➃ VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =4.5V, ID = 12A VDS = 10V IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 7.0 100 -100 22 10 5.0 14 255 6.0 15 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1860 990 55 — — — V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 10V, ID = 12A, VGS = 4.5V, RG = 1.8Ω ns nH l pF Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 10V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 12* 48 1.4 50 60 Test Conditions A V ns nC Tj = 25°C, IS = 12A, VGS = 0V ➃ Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs VDD ≤ 16V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 6.25 175 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7F3704 100 100 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 3.5V 10 3.5V 10 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) TJ = 25 ° C TJ = 150 ° C 15 V DS = 15V 20µs PULSE WIDTH 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 4.5 100 Fig 2. Typical Output Characteristics 100 4.0 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 3.5 1 ID = 12A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7F3704 VGS = Ciss = Crss = Coss = Ciss 2000 1600 Coss 1200 800 400 10 ID = 12A VDS = 16V VDS = 10V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 C rss 0 0 1 10 0 100 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 TJ = 25 ° C 1 V GS = 0 V 1.2 1.6 2.0 2.4 2.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 0.8 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage TJ = 150 ° C 0.1 0.4 20 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance (pF) 2400 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS , Gate-to-Source Voltage (V) 2800 3.2 100µs 10 1ms 10ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7F3704 20 V DS LIMITED BY PACKAGE VGS I D , Drain Current (A) 16 RD D.U.T. RG + -V DD VGS 12 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7F3704 1 5V D R IV E R L VD S D .U .T. RG + V - DD IA S VGS 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 BOTTOM ID 5.4A 7.6A 12A 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 4.5V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7F3704 Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 12A, di/dt ≤ 80A/µs, maximum junction temperature. VDD = 15 V, Starting TJ = 25°C, L= 2.7mH Peak IAS =12A, VGS = 10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 20V, TJ ≤ 150°C Case Outline and Dimensions — TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/01 www.irf.com 7