PD-94302B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3205 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3205 55V RDS(on) ID 0.008Ω 55A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range 55* 55* 220 125 1.0 ±20 140 55 12.5 2.7 -55 to 150 Package Mounting Surface Temp. Weight 300 (for 5s) 2.6 (Typical) A W W/°C V mJ A mJ V/ns o C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 05/17/05 IRF5N3205 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 55 — — V — 0.053 — V/°C — — 0.008 Ω 2.0 55 — — — — — — 4.0 — 25 250 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 170 32 74 30 300 65 35 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 3600 1200 435 — — — µA nA nC ns nH l pF Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A Ã Ω Parameter BVDSS VDS = VGS, ID = 250µA VDS =15V, IDS = 55A à VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 27.5V, ID = 55A, VGS = 10V, RG = 2.5Ω Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 55* 220 1.3 130 410 Test Conditions A V ns nC Tj = 25°C, IS = 55A, VGS = 0V à Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 1.0 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRF5N3205 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 2.0 V DS = 25V 15 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 10 100 Fig 2. Typical Output Characteristics 1000 100 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 ° C 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 55A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5N3205 8000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 6000 Ciss 4000 Coss 2000 Crss 0 1 10 ID = 55A VDS = 44V VDS = 27V VDS = 11V 16 12 8 4 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) 80 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150 ° C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 ° C 1 0.1 0.4 V GS = 0 V 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 1.6 100µs 1ms 10 1 Tc = 25°C Tj = 150°C Single Pulse 1 10ms 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5N3205 100 LIMITED BY PACKAGE V GS 80 I D , Drain Current (A) RD V DS D.U.T. RG + -V DD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 TC , Case Temperature ( °C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5N3205 15V D.U.T. RG VGS 20V DRIVER L VDS + V - DD IAS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 250 ID 24.6A 35A BOTTOM 55A TOP 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5N3205 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.09mH Peak I AS = 55A, V GS = 10V, RG= 25Ω ISD ≤ 55A, di/dt ≤ 217A/µs, VDD ≤ 55V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2005 www.irf.com 7