INFINEON BGA622

Silicon Discretes
The BGA622 Silicon-Germanium
Universal Low Noise Amplifier MMIC
in 1800 - 2500 MHz Receiver Applications
Application Note No. 069
Features
• Versatile, easy-to-use LNA MMIC
in 70 GHz ft SiGe technology
3
• 50 Ω matched output, pre-matched input
• Integrated output DC blocking capacitor,
4
integrated RF choke on internal bias network
• Low current consumption of 6 mA
SOT-343
• “Shutdown” or “Sleep” mode
• Unconditionally stable
• Low external component count
• Exceptional noise figure: 1.1 dB in a PC board at 2 GHz
2
1
Applications
• Low Noise Amplifier for 800/900 MHz, GSM900, 900 MHz ISM, DCS1800, GPS,
1900 MHz PCS, 2.1 GHz UMTS and 2.4 GHz Wireless LAN
• Long-Range Bluetooth applications requiring improved system sensitivity via use of
an external LNA
Introduction
The BGA622 is an easy-to-use, versatile and flexible low-cost Low Noise Amplifier
(LNA) MMIC designed for the high linearity and sensitivity requirements of existing and
next - generation wireless applications including GSM, 900 MHz ISM, GPS, UMTS and
Wireless LANs. Based on Infineon’s cost-effective 70 GHz fT Silicon-Germanium (SiGe)
B7HF bipolar process technology, the BGA622 offers a 1.1 dB noise figure and 15 dB of
gain at 2.1 GHz for high performance, cost-effective mobile communications
applications. BGA622 offers impressive noise figure performance, particularly for a lowcost, integrated MMIC. In the past, in-circuit noise figures approaching 1.0 dB at 2 GHz
were possible only for more expensive GaAs-based, fully discrete solutions utilizing
narrowband impedance matching and higher external parts count. The BGA622
combines the excellent noise figure advantages of a high-performance discrete solution
with the ease-of-use, low parts count, and diminished risk and reduced system
development time made possible by a MMIC approach.
Application Note
1
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Introduction
The new LNA incorporates a 50 Ω matched output with an integrated output DC blocking
capacitor. The broadband output match simplifies integration issues with external imagestripping filters. The input is pre-matched, requiring an external DC blocking capacitor.
An integrated, on-chip inductor eliminates the need for an external RF choke on the
voltage supply pin. The noise figure of BGA622 is relatively insensitive to the input
impedance matching approach taken by the end user, reducing development time and
risk. A low supply current of 6 mA at 2.75 V and an integrated on/off feature provides for
low power consumption and increased stand by time for 3G cellular handsets or other
portable, battery-operated wireless applications.
Vcc,4
In,1
Out,3
On/Off
10kΩ
GND,2
Figure 1
BGA622’s Equivalent Circuit
In, 1
4, Vcc
GND, 2
3, Out
Top View
Figure 2
Pin Connections
Application Note
2
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Overview
Overview
The BGA622 is shown in three different configurations for the frequency band between
1700 MHz and 2500 MHz which covers the PCN/PCS, UMTS and BlueTooth
frequencies at 1800 / 1900 MHz, 2.14 GHz and 2.4 GHz:
• Configuration A: minimum parts count, power down option is not used
• Configuration B: BGA622 with power down option
• Configuration C: BGA622 with power down option and increased IIP3
The following table shows the measured performance of these three circuits. All
measurement values presented in this application note include losses of both PCB and
connectors - in other words, the reference planes used for measurements are the PCB’s
RF SMA connectors. Noise figure and gain results shown do not have any PCB loss
extracted from them.
Performance Overview
Parameter
Configuration A
Configuration B
Configuration C
Supply voltage
2.75 V
2.75 V
2.75 V
Supply current
5.5 mA
5.4 mA
5.4 mA
Gain
14.8 dB @ 1.85 GHz 14.5 dB @ 1.85 GHz 14.6 dB @ 1.85 GHz
13.8 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz
12.6 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz
Noise Figure
1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz
1.25 dB @ 2.14 GHz 1.2 dB @ 2.14 GHz 1.25 dB @ 2.14 GHz
1.3 dB @ 2.4 GHz 1.35 dB @ 2.4 GHz 1.3 dB @ 2.4 GHz
Input return loss
11.1 dB @ 1.85 GHz 11.9 dB @ 1.85 GHz 14.1 dB @ 1.85 GHz
12.5 dB @ 2.14 GHz 12.3 dB @ 2.14 GHz 13.1 dB @ 2.14 GHz
11.6 dB @ 2.4 GHz 11.2 dB @ 2.4 GHz 11.1 dB @ 2.4 GHz
Output return loss 12.4 dB @ 1.85 GHz 12.2 dB @ 1.85 GHz 11.7 dB @ 1.85 GHz
12.5 dB @ 2.14 GHz 11.4 dB @ 2.14 GHz 11.3 dB @ 2.14 GHz
12.8 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz
Reverse Isolation
26.1 dB @ 1.85 GHz 26.3 dB @ 1.85 GHz 26.2 dB @ 1.85 GHz
24.8 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz
23.8 dB @ 2.4 GHz 24.0 dB @ 2.4 GHz 24.1 dB @ 2.4 GHz
Input compression -15 dBm
point1)
Input 3rd order
intercept point2)
1)
2)
-16 dBm
-15 dBm
-7.1 dBm @ 1.8 GHz -6.6 dBm @ 1.8 GHz 4.7 dBm @ 1.8 GHz
-5.5 dBm @ 2.14 GHz -4.0 dBm @ 2.14 GHz 4.4 dBm @ 2.14 GHz
-3.9 dBm @ 2.4 GHz -3.9 dBm @ 2.4 GHz 4.3 dBm @ 2.4 GHz
Measured at 2.14 GHz
-30 dBm per tone, ∆f = 1 MHz
Application Note
3
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
Configuration A
The circuit in Figure 3 shows the minimum parts count version of a BGA622 LNA. There
are only three external elements necessary. A DC blocking capacitor at the output and
a coil at the power supply are already integrated on chip
Vcc
C3
47pF
In
L1
2.2nH
4
1
Q1
BGA622
C1
47pF
2
Figure 3
Out
3
Circuit Diagram of Configuration A
Bill of Materials of Configuration A
Name
Value
Package
Manufacturer
Function
C1
C3
L1
47 pF
0402
various
DC block
47 pF
0402
various
RF bypass
2.2 nH
0402
Toko LL1005-FH
Input matching
Q1
BGA622
SOT-343
Infineon Technologies
SiGe MMIC
For measurement graphs of configuration A please refer to the next pages.
Application Note
4
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
2
Noise Figure [dB]
1,8
1,6
1,4
1,2
1
0,8
0,6
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 4
Noise Figure Configuration A
16
Gain [dB]
15
14
13
12
11
10
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 5
Gain Configuration A
Application Note
5
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
Return Loss [dB]
6
8
10
s11
12
s22
14
16
1,7
1,9
2,1
2,3
2,5
2,3
2,5
Frequency [GHz]
Figure 6
Return Loss Configuration A
Reverse Isolation [dB]
20
22
24
26
28
1,7
1,9
2,1
Frequeny [GHz]
Figure 7
Reverse Isolation Configuration A
Application Note
6
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
5
K, B1
4
3
K
2
B1
1
0
0
1
2
3
4
5
6
Frequency [GHz]
Stability Factor K and Stability Measure B1 of Configuration A
Gain [dB]
Figure 8
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
Frequency [GHz]
Figure 9
Wide Span Gain Configuration A
Application Note
7
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
Return Loss [dB]
0
2
4
6
8
10
12
14
16
18
20
s11
s22
0
1
2
3
4
5
6
Frequency [GHz]
Wide Span Return Loss Configuration A
0
15
Pout [dBm]
-5
14
Gain
-10
13
-15
12
-20
Gain [dB]
Figure 10
11
Pout
-25
10
-35
-30
-25
-20
-15
-10
Pin [dBm]
Figure 11
Gain Compression @ 2.14 GHz Configuration A
Application Note
8
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
Configuration B
Figure 12 shows a BGA622 LNA with available power down mode. In the BGA622, an
internal high-impedance path exists around the device’s internal output DC blocking
capacitor, between the output pin and the device’s internal shutdown circuitry. Applying
Vcc at the Output pin (pin 3) will switch off the BGA622 and only a small supply current
of about 0.26 mA flows into the device in shutdown mode. The schematic shows the
“PD” (Power Down) connection where the shutdown signal may be applied. Ground or
an open circuit at the PD pin will turn on the device. Note that if the Power Down feature
is employed, the internal DC blocking capacitor of the BGA622 is bypassed by external
circuitry, and therefore some sort of external DC blocking at the output must be
employed. This can be either an external output DC blocking capacitor, or the usual
image-stripping filter, provided the input of the filter presents a DC open circuit.
Vcc
C3
47pF
In
L1
2.2nH
1
4
Q1
BGA622
C1
47pF
2
C4
47pF
Out
3
L3
47nH
PD
C5
47pF
Figure 12
Circuit Diagram Configuration B
Bill of Materials of Configuration B
Name
Value
Package
Manufacturer
Function
C1
C3
C4
C5
L1
L3
47 pF
0402
various
DC block
47 pF
0402
various
RF bypass
47 pF
0402
various
DC block
47 pF
0402
various
RF bypass
2.2 nH
0402
Toko LL 1005-FH
Input matching
47 nH
0402
Toko LL 1005-FH
RF block
Q1
BGA622
SOT-343
Infineon Technologies
SiGe MMIC
Application Note
9
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
2
Noise Figure [dB]
1,8
1,6
1,4
1,2
1
0,8
0,6
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 13
Noise Figure Configuration B
16
Gain [dB]
15
14
13
12
11
10
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 14
Gain Configuration B
Application Note
10
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
Return Loss [dB]
6
8
10
s11
12
s22
14
16
1,7
1,9
2,1
2,3
2,5
2,3
2,5
Frequency [GHz]
Figure 15
Return Loss Configuration B
Reverse Isolation [dB]
20
22
24
26
28
1,7
1,9
2,1
Frequeny [GHz]
Figure 16
Reverse Isolation Configuration B
Application Note
11
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
5
K, B1
4
3
K
2
B1
1
0
0
1
2
3
4
5
6
Frequency [GHz]
Stability Factor K and Stability Measure B1 of Configuration B
Gain [dB]
Figure 17
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
Frequency [GHz]
Figure 18
Wide Span Gain Configuration B
Application Note
12
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
Return Loss [dB]
0
2
4
6
8
10
12
14
16
18
20
s11
s22
0
1
2
3
4
5
6
Frequency [GHz]
Wide Span Return Loss Configuration B
0
15
Pout [dBm]
-5
14
Gain
-10
13
-15
12
-20
Gain [dB]
Figure 19
11
Pout
-25
10
-35
-30
-25
-20
-15
-10
Pin [dBm]
Figure 20
Gain Compression @ 2.14 GHz Configuration B
Application Note
13
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
Forward Transmission [dB]
0
-10
-20
-30
-40
-50
-60
0
1
2
3
4
5
6
5
6
Frequency [GHz]
Figure 21
Forward Transmission in Power Down Mode
0
s11
2,5
Return Loss [dB]
5
s22
7,5
10
12,5
15
17,5
20
0
1
2
3
4
Frequency [GHz]
Figure 22
Input and Output Return Loss in Power Down Mode
Application Note
14
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
Configuration C
The circuit in Figure 23 shows a way to increase the input 3rd order intercept point of
BGA622. L2 and C2 offer low-frequency intermodulation products a low impedance path
to ground. This prevents them from modulating the base voltage of the BGA622’s
internal RF transistor and thus linearity is improved. Typically the input 3rd-order intercept
point of BGA622 can be improved by 6 to 10 dB in this manner.
Vcc
C2
100nF
L2
22nH
C3
47pF
In
L1
2.2nH
1
4
Q1
BGA622
C1
47pF
2
C4
47pF
Out
3
PD
L3
47nH
C5
47pF
Figure 23
Circuit Diagram Configuration C
Bill of Materials of Configuration C
Name
Value
Package
Manufacturer
Function
C1
C2
C3
C4
C5
L1
L2
L3
47 pF
0402
various
DC block
100 nF
0603
various
IIP3 improvement
47 pF
0402
various
RF bypass
47 pF
0402
various
DC block
47 pF
0402
various
RF bypass
2.2 nH
0402
Toko LL 1005-FH
Input matching
22 nH
0402
Toko LL 1005-FH
RF block
47 nH
0402
Toko LL 1005-FH
RF block
Q1
BGA622
SOT-343
Infineon Technologies
SiGe MMIC
Application Note
15
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
2
Noise Figure [dB]
1,8
1,6
1,4
1,2
1
0,8
0,6
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 24
Noise Figure Configuration C
16
Gain [dB]
15
14
13
12
11
10
1,7
1,9
2,1
2,3
2,5
Frequency [GHz]
Figure 25
Gain Configuration C
Application Note
16
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
Return Loss [dB]
6
8
10
s22
12
14
s11
16
1,7
1,9
2,1
2,3
2,5
2,3
2,5
Frequency [GHz]
Figure 26
Return Loss Configuration C
Reverse Isolation [dB]
20
22
24
26
28
1,7
1,9
2,1
Frequeny [GHz]
Figure 27
Reverse Isolation Configuration C
Application Note
17
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
5
K, B1
4
3
K
2
B1
1
0
0
1
2
3
4
5
6
Frequency [GHz]
Figure 28
Stability Factor K and Stability Measure B1 of Configuration C
20
17,5
Gain [dB]
15
12,5
10
7,5
5
2,5
0
0
1
2
3
4
5
6
Frequency [GHz]
Figure 29
Wide Span Gain Configuration C
Application Note
18
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
0
2
s11
Return Loss [dB]
4
6
8
10
12
14
s22
16
18
0
1
2
3
4
5
6
Frequency [GHz]
Wide Span Return Loss Configuration C
0
15
Pout [dBm]
-5
14
Gain
-10
13
-15
12
-20
Gain [dB]
Figure 30
11
Pout
-25
10
-35
-30
-25
-20
-15
-10
Pin [dBm]
Figure 31
Gain Compression @ 2.14 GHz Configuration C
Application Note
19
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Application PCB
Application PCB
Figure 32 shows the placement of the specific components on the PCB. To place L1 on
the board the input 50 Ω transmission line has to have a gap cut in it to allow for the
insertion of L1. For this purpose a relief is provided in the solder mask to ease the
soldering of the component.
Vcc
NA
NA
L2
C2
L1
C1
1 4
Q1
2 3
C4
9.5 mm
C3
In
Out
L3
C5
NA
8 mm
PD
Figure 32
Component Placement on Application PCB
35 µm Cu
0.2 mm FR4
35 µm Cu
for mechanical
rigidity of PCB
0.8 mm FR4
35 µm Cu
Figure 33
PCB Cross Section
Evaluation boards for the LNA applications described in this application note are
available from Infineon Technologies.
Application Note
20
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise
Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Revision History:
2001-10
V3.0
Previous Version:
Page
Subjects (major changes since last revision)
Document’s layout has been changed: 2002-Sep.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com.
Edition 2001-10
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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