BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 19S SOT-223 BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 12 Total power dissipation Ptot TS ≤ 75 °C Values Unit V mA W 1 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 75 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 100 nA - - 100 IEBO µA - - 10 hFE IC = 70 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 40 2 100 220 Dec-13-1996 BFG 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 4 pF - 0.85 1.4 - 0.4 - - 4.6 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2.5 - f = 1.8 GHz - 4 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8 - f = 900 MHz - 11 - f = 1.8 GHz - 5 - Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω Third order intercept point IP3 dBm IC = 70 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω - 35 - 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 19S Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 TS 800 700 600 500 TA 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 RthJS 10 2 P totmax/PtotDC - K/W 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996 BFG 19S Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 6.0 2.6 pF GHz 5V 3V 2.2 Ccb fT 2.0 5.0 2V 1.8 4.5 1.6 4.0 1.4 3.5 1.2 1.0 3.0 0.8 2.5 0.6 1V 2.0 0.4 0.7V 1.5 0.2 0.0 1.0 0 4 8 12 16 V VR 22 0 20 40 60 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 80 mA IC 120 10 10V 5V dB 10V dB 3V G G 2V 5V 3V 10 6 8 4 2V 1V 1V 6 2 4 0 0.7V 0.7V 2 0 20 Semiconductor Group 40 60 80 mA IC 120 5 -2 0 20 40 60 80 mA IC 120 Dec-13-1996 BFG 19S Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 14 40 0.9GHz IC=70mA dB 8V dBm G IP3 0.9GHz 5V 10 30 3V 1.8GHz 8 25 2V 6 1.8GHz 20 4 1V 15 2 0 0 2 4 6 8 V 10 0 12 20 40 60 80 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 120 32 36 IC=70mA IC=70mA dB dB G mA IC S21 28 24 20 24 16 20 12 16 8 12 4 8 4 0 0.0 10V 2V 1V 0.7V 0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 10V 2V 1V 0.7V GHz 3.5 f -4 -8 0.0 6 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-13-1996