INFINEON TLE6228

D a t a s h e e t T L E 6 2 2 8 G P
Smart Quad Channel Low-Side Switch
Features
Product Summary
• Shorted Circuit Protection
• Overtemperature Protection
• Overvoltage Protection
• Parallel Control of the Inputs (PWM Applications)
• Seperate Diagnostic Pin for Each Channel
• Power - SO 20 - Package with integrated
cooling area
• Standby mode with low current consumption
• µC compatible Input
• Electrostatic Discharge (ESD) Protection
• Green Product (RoHS compliant)
• AEC qualified
Supply voltage
Drain source voltage
On resistance
Output current
Application
• All kinds of resistive and inductive loads (relays,electromagnetic valves)
• µC compatible power switch for 12 and 24 V applications
• Solenoid control switch in automotive and industrial control systems
• Robotic Controls
VS
VDS(AZ)max
RON 1,2
RON 3,4
ID 1,2 (max)
ID 3,4 (m ax)
4.8 - 32
60
0.23
0.28
2x5
2x3
V
V
W
W
A
A
PG-DSO-20-65
General description
Quad channel Low-Side-Switch (2x5A/2x3A) in Smart Power Technology (SPT) with four separate in­
puts and four open drain DMOS output stages. The TLE 6228 GP is fully protected by embedded pro­
tection functions and designed for automotive and industrial applications. Each channel has its own
status signal for diagnostic feedback. Therefore the TLE 6228 GP is particularly suitable for ABS or
Powertrain Systems.
Block Diagram
STBY
VS
ENA
GND
normal function
IN1
V BB
SCB / overload
IN2
as Ch. 1
IN3
as Ch. 1
IN4
as Ch. 1
overtemperature
LOGIC
open load/sh. to gnd
Output Stage
ST1
1
OUT1
4
4
ST2
ST3
as ST 1
ST4
as ST 1
Gate Control
OUT4
as ST 1
GND
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D a t a s h e e t T L E 6 2 2 8 G P
Detailed Block Diagram
VS
STBY
ENA
internal supply
Overtemperature
Channel 4
Overtemperature
Channel 1
Open Load
IN1
LOGIC
Overload
OUT1
ST1
Open Load
IN4
LOGIC
IPD
Overload
OUT4
ST4
Overtemperature
Channel 3
Overtemperature
Channel 2
IPD
Open Load
IN2
LOGIC
Overload
OUT2
ST2
Open Load
IN3
LOGIC
IPD
Overload
OUT3
ST3
IPD
GND
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Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
GND
OUT1
ST1
IN4
VS
STBY
IN3
ST2
OUT2
GND
GND
OUT3
ST3
IN2
GND
ENA
IN1
ST4
OUT4
GND
Pin Configuration (Top view)
Function
Ground
Power Output channel 1
Status Output channel 1
Control Input channel 4
Supply Voltage
Standby
Control Input channel 3
Status Output channel 2
Power Output channel 2
Ground
Ground
Power Output channel 3
Status Output channel 3
Control Input channel 2
Ground Logic
Enable Input for all four channels
Control Input channel 1
Status Output channel 4
Power Output channel 4
Ground
GND
OUT1
ST1
IN4
VS
STBY
IN3
ST2
OUT2
GND
1•
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
PG - DSO - 20 - 65
Heat slug internally connected to ground pins
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GND
OUT4
ST4
IN1
ENA
GNDL
IN2
ST3
OUT3
GND
D a t a s h e e t T L E 6 2 2 8 G P
Maximum Ratings for T j = – 40°C to 150°C
The maximum ratings may not be exceeded under any circumstances, not even momentarily and
individually, as permanent damage to the IC will result.
Parameter
Supply voltage
Symbol
VS
Continuous drain source voltage (OUT1...OUT4)
VDS
Input voltage IN1 to IN4, ENA
VIN , VENA
Input voltage STBY
VSTBY
Status output voltage
VST
Load Dump Protection VLoad Dump = UP+US; UP=13.5 V
RI1)=2 W; td=400ms; IN = low or high
With RL= 5 W for Ch. 1,2; 10 W for Ch. 3,4
(ID = 2,7A respectively 1,35A)
VLoad Dump
Operating temperature range
Storage temperature range
Tj
Tstg
Output current per channel (see page 6)
ID(lim)
Status output current
IST
Inductive load switch off energy (single pulse)
Tj = 25°C
Electrostatic Discharge Voltage (human body model)
according to MIL STD 883D, method 3015.7 and EOS/ESD
assn. standard S5.1 - 1993
Values
-0.3 ... + 40
Unit
V
45
V
- 0.3 ... + 6
V
- 0.3 ... + 40
- 0.3 ... + 32
V
55
V
- 40 ... + 150
- 55 ... + 150
°C
ID(lim) min
A
- 5 ... + 5
mA
50
mJ
2)
EAS
VESD
2000
V
DIN Humidity Category, DIN 40 040
E
IEC Climatic Category, DIN IEC 68-1
40/150/56
Thermal resistance
junction – case (die soldered on the frame)
junction - ambient @ min. footprint
junction - ambient @ 6 cm2 cooling area
K/W
RthJC
RthJA
2
50
38
PCB with heat pipes,
backside 6 cm2 cooling area
Minimum footprint
) R =internal resistance of the load dump test pulse generator LD200
I
)V
LoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.
1
2
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Electrical Characteristics
Parameter and Conditions
VS = 4.8 to 18 V ; Tj = - 40 °C to + 150 °C
(unless otherwise specified)
Symbol
Values
min
Unit
typ
max
1. Power Supply (VS)
Supply current (Outputs ON)
IS
8
mA
Supply current (Outputs OFF)
VENA = L, VSTBY = H
IS
4
mA
IS
10
Standby current
VSTBY = L
Operating voltage
VS
4.8
µA
32
V
2. Power Outputs
ON state resistance Channel 1,2
ID = 1A; VS ‡ 9.5 V
Tj = 25 � C
Tj = 150°C
RDS(ON)
0.23
0.26
0.5
W
ON state resistance Channel 3,4
ID = 1A; VS ‡ 9.5 V
Tj = 25 � C
Tj = 150°C
RDS(ON)
0.28
0.4
0.75
W
ID ‡ 100 mA
VDS(AZ)
45
60
V
VSTBY = H, VIN = L
IPD
10
50
µA
VSTBY = L, 0V £ VDS £ 20V
IDlk
5
µA
50
60
30
30
100
3000
3000
3000
100
µs
Z-Diode clamping voltage (OUT1...4)
Pull down current
3
Output leakage current
4
Output turn on time
Output turn off time 4
Output on fall time 4
Output off rise time 4
Overload switch-off delay time 4
Output off status delay time 4
Failure extension Time for Status Report
Input Suppression Time
Open Load (off) filtering Time 5
ID = 1 A
ID = 1 A
ID = 1 A
ID = 1 A
ton
toff
tfall
trise
tDSO
tD
tD-failure
tD-IN
tfOL(off)
3
3
3
3
20
500
500
500
10
20
15
20
10
5
60
1200
1200
1200
30
3. Digital Inputs (IN1, IN2, IN3, IN4, ENA)
Input low voltage
Input high voltage
Input voltage hysteresis
5
Input pull down current
Enable pull down current
VIN = 5 V; VS ‡ 6.5 V
VENA = 5 V; VS ‡ 6.5 V
VINL
- 0.3
1.0
V
VINH
2.0
6.0
V
VINHys
50
200
IIN
10
30
60
µA
IENA
10
20
40
µA
VSTL
0.5
V
ISTH
2
µA
mV
4. Digital Status Outputs (ST1 - ST4) Open Drain
Output voltage low
IST = 2 mA
Leakage current high
3
If the output voltage exceeds 35V, this current (zener current of a internal structure) can rise up to 1mA
See timing diagram, resistive load condition; VS ‡ 9 V
5
This parameter will not be testet but assured by design
4
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Electrical Characteristics
Parameter and Conditions
VS = 4.8 to 18 V ; Tj = – 40 °C to + 150 °C
(unless otherwise specified)
Symbol
Values
min
Unit
typ
max
5. Standby Input (STBY)
Input low voltage
VSTBY
0
1
V
Input high voltage
VSTBY
3.5
VS
V
300
µA
0.3* VS 0.33* VS 0.36* VS
V
Input current
VSTBY = 18 V ISTBY
6. Diagnostic Functions
Open load detection voltage
VENA = X, VIN = L
VS ‡ 6.5 V
VDS(OL)
Open load detection current channel 1,2
VENA = VIN = H
VS ‡ 6.5 V
ID(OL) 1,2
100
160
250
mA
Open load detection current channel 3,4
VENA = VIN = H
VS ‡ 6.5 V
ID(OL) 3,4
100
160
250
mA
Overload detection current channel 1,2
VS ‡ 6.5 V
ID(lim) 1,2
5
7.5
A
Overload detection current channel 3,4
VS ‡ 6.5 V
ID(lim) 3,4
3
5.5
A
Overtemperature shutdown threshold
Hysteresis
5
Tth
Thys
Pulse Width for static diagnostic output
5
tIN
170
200
°C
K
500
µs
10
This parameter will not be tested but assured by design
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Application Description
This IC is especially designed to drive inductive loads (relays, electromagnetic valves).
Integrated clamp-diodes limit the output voltage when inductive loads are discharged.
Four open-drain logic outputs indicate the status of the integrated ciruit. The following conditions are
monitored and signalled:
- overloading of output (also shorted load to supply) in active mode
- open and shorted load to ground in active and inactive mode
- overtemperature
Circuit Description
Input Circuits
The control and enable inputs, both active high, consist of schmitt triggers with hysteresis. All inputs are provided with pull-down current sources. Not connected inputs are interpreted as low and the respective output stages are switched off.
In standby mode (STBY = LOW ) the current consumption is greatly reduced.
The circuit is active when STBY = HIGH. If the standby function is not used, it is allowed to connect the standby pin directly to VS.
Status Signals: The status signals are undefined for 2ms after a power up event or a STBY low to high transition. Output Stages
The four power outputs consist of DMOS-power transistors with open drains. The output stages are
short circuit protected throughout the operating range. Each output has it's own zenerclamp. This
causes a voltage limitation at the power transistor when inductive loads are switched off.
Parallel to the DMOS transistors there are internal pull down current sources. They are provided to de­
tect an open load condition in the off state. They will be disconnected in the standby mode.
Due to EMI measures there is an internal zenerclamp in parallel to the output stage. It gets active above
33V drain source voltage. This leads to an increasing leakage current up to 1 mA @ VDS = 40V.
Protective Circuits
The outputs are protected6) against current overload and overtemperature. If the output current in­
creases above the overload detection threshold IQO for a longer time then tDSO or the temperature in­
creases above Tth, then the power transistor is immediately switched off. It remains off until the control
signal at the input is switched off and on again.
Fault Detection
The status outputs indicate the switching state of the output stage. Under normal conditions is: ST = low
� Output off; ST = high � Output on. If an error occurs, the logic level of the status output is inverted,
as listed in the diagnostic table.
6)
The integrated protection functions prevent an IC destruction under fault conditions and may not be used in normal
operation or permanently.
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If current overload or overtemperature occurs for a longer time than tDSO, the fault condition is latched
into an internal register and the output is shutdown. The reset is done by switching off the corresponding
control input for a time longer than tD-IN.
Open load is detected for all four channels in on and off mode.
In the on mode the load current is monitored. If it drops below the specified threshold value IQU then an
open load condition is detected.
In the off mode, the output voltage is monitored. An open load condition is detected when the output
voltage of a given channel is below the threshold VDS(OL), which is typ. 33 % of the supply voltage VS. To
prevent an open load diagnosis in case of transient Voltages on the outputs the open load detection in
off mode uses a filter of typ. 50µs.
Status output at pulse width operation
If the input is operated with a pulsed signal, the status does not follow each single pulse of the input sig­
nal. An internal delay tD of typ. 1.2ms ( min 500 ms) enables a continuous status output signal. See the
timing diagrams on the following pages for further information.
This internal status delay simplifies diagnostic software for pwm applications.
Diagnostic Table
In general the status follows the input signal in normal operating conditions.
If any error is detected the status is inverted.
Standby
Input
Enable
Input
Control
Input
Power
Output
Status
Output
STBY
ENA
IN
Q
ST
Standby1)
L
X
X
off
H
Normal function
H
H
H
L
H
H
X
L
H
off
off
ON
L
L
H
Open load or short to ground
H
H
H
H
L
L
H
H
L
H
L
H
off
off
off
ON
H
H
H
L
Overload or short to supply2)
H
H
H
off
L
H
H
HfiL
off
L
H
L
X
off
L
Overtemperature2)
H
H
H
off
L
reset latch 3)
H
H
HfiL
off
L
H
L
X
off
L
Operating Condition
reset latch 3)
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Note 1) : Standby is not designed for switching or PWM operation of the outputs
Note 2) : overload/short-to-supply/overtemperature - events shorter than min. time t DSO specified in 2.10
will not be latched and not reported at the status pin.
Note 3) : to reset latched status-output in case of overload/short-to-supply/overtemperature the control
input has to go low and stay low for longer than max. input suppression time tD-IN specified in 2.13 of the
characteristics
Failure Situations and Status Report
Logic Block Diagram
Overtemperature
1.....overtemperature
0.....normal cond.
Gate Driver
1... Output On
0... Output Off
ENA
1....enabled
0... disabled
Input
1....On
0... Off
IN
tDSO
tD
Delay D
SET
Delay
60µs
S
R
OUT
Q
CLR
Q
Delay
60µs
tD
t D-IN when overload occured
Overload
0.....overload
1.....normal cond.
1,2ms typ.
IN
OUT
tD
60µs typ.
EN
IN
HI
Open load "off"
1.....open load
0.....normal cond.
Filter
30µs
Filter
Delay D
OUT
Delay D
OUT
Delay D
OUT
Status
0....High
1....Low
EN
IN
tD-failure
EN
Open load "on"
0.....open load
1.... normal cond.
IN
t D-failure
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Timing Diagrams
Output Slope
VIN
VI NH
VINL
t
VDS
t on
t off
VS
85%
15%
t
tf
tr
V ST
tD
t
Fig. 1
Overload Switch OFF Delay
ID
t
ID(lim)
DSO
ID(OL)
t
VST
t D-failure
t
Fig. 2
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V4.1
ST2
Page
IN1
11
IENA
IIN4
IIN3
IIN2
IIN1
IST4
IST3
IST2
IST1
STBY
ENA
IN4
IN3
IN2
IN1
ST4
ST3
ST2
ST1
IVS
GND
TLE
6227
VS
VS
TLE 6228 GP
VSTBY
VENA
ISTBY
ENA
VIN4
IN4
10k
VIN3
IN3
VIN2
IN2
10k
VST3 VST4 VIN1
ST4
10k
ST3
VST1 VST2
ST1
10k
VD = 5V
OUT4
OUT3
OUT2
OUT1
ID4
ID3
ID2
ID1
R L4
OUT3
R L2
OUT2
RL1
OUT1
VDS(OUT4) VDS(OUT3) VDS(OUT2) VDS(OUT1)
OUT4
R L3
D a t a s h e e t T L E 6 2 2 8 G P
Test Circuit
2010-07-10
V4.1
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12
Enable
Input
Control
Inputs
Status
Output
10k 10k 10k 10k
VD = 5V
C
OUT4
6228 OUT3
ENA GND
IN1
IN2
IN3
IN4
STBY VS
ST1
OUT1
ST2
ST3
ST4 TLE OUT2
L1
L2
L3
L4
+12V
D a t a s h e e t T L E 6 2 2 8 G P
Application Circuit
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D a t a s h e e t T L E 6 2 2 8 G P
The blocking capacitor C is recommended to avoid critical negative voltage spikes on VS in case of bat­
tery interruption during OFF-commutation.
Timing Diagrams of Diagnostic with Pulsed Input Signal
Normal condition, resistive load, pulsed input signal
V
IN
t IN
ID
V ST
tD
tD
Fig. 3
Current Overload
F
current overload condition
tINoff
V
IN
I D(lim)
ID
V ST
tD-IN
t DSO
t DSO
tINoff < tD-IN : Input suppression time avoids a restart after overtemperature
Fig. 4
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Diagnostic status output at different open load current conditions V IN
I D(OL)
ID
t D-failure
V ST
tD
Fig. 5
V
IN
tINoff
I D(OL)
ID
tD-failure
V ST
tD
tINOFF < tD leads to a static status signal
Fig. 6
V
IN
tINoff
I D(OL)
ID
V ST
tD-failure
tD-failure
tD
tD-failure
tINoff > tD : Intermittend status signal
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Fig. 7
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Normal operation, followed by open load condition
~ 55V
Open load voltage condition
VDS 12V
33%
VIN
I D(OL)
ID
tfOL(off)­
tD-failure
VST
tD
tD-failure
Fig. 8
Overtemperature
Overtemperature
VIN
tINoff > tD-IN
Reset of overload
Flip Flop
I D(OL)
ID
VST
V4.1
tD-failure
tD-failure
t
DSO
Fig. 9
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D a t a s h e e t T L E 6 2 2 8 G P
Typical electrical Characteristics
Drain-Source on-resistance
RDS(ON) = f (Tj ) ; Vs = 9,5V
Channel 1, 2
Channel 3, 4
Typical Drain- Source ON-Resistance
0,45
RDS(ON) [Ohm]
0,4
0,35
0,3
0,25
0,2
0,15
-50
-25
0
25
50
75
100
125
150
175
Tj[°C]
Typical ON Resistance versus Junction-Temperature
Channel 1-4
Figure 6 :
Output Clamping Voltage
VDS(AZ) = f (Tj ) ; ID = 100mA
Channel 1-4
Typical Clamping Voltage
55
54
VDS (AZ) [V]
53
52
51
50
49
48
-50
-25
0
25
50
75
100
125
150
175
Tj[°C]
Figure 7 :
V4.1
Typical Clamp Voltage versus Junction-Temperature
Channel 1-4
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D a t a s h e e t T L E 6 2 2 8 G P
Package
all dimensions in mm PG - DSO - 20 - 65
15.74 + /- 0. 1
13.7 -0.2
9 x 1.27 = 11.43
1 .2 7
+ 0 .13
1.2
-0.3
0.25 M
A
1
5.9 + /-0 .1
11
3.2 + /- 0.1
20
0.4
10
1 x 45°
PIN 1 IN D EX M A R KIN G
A
15.9
+/ -0 .15
1.3
0.1
8°
2.8
8°
8°
8°
6.3
+/ -0 .15 1)
11
14.2 + / -0 .3
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with gov­
ernment regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free
finish
on
leads
and
suitable
for
Pb-free
soldering
according
to
IPC/JEDEC
J-STD-020).
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Revision History
Version
Date
Changes
V3.2 Æ V4.0: 2007-06-06: Version Change to Green Product
V4.0
2007-06-06
Revision history implemented
V4.0
2007-06-06
IFX Logo updated
V4.0
2007-06-06
Package name according green nomenclature changed from P-DSO-20-12
to PG-DSO-20-37
V4.0
2007-06-06
Ordering Code removed
V4.0
2007-06-06
Package Picture in front page up-dated
V4.0
2007-06-06
Added in feature list:
• Green Product (RoHS compliant)
• AEC qualified
V4.0
2007-06-11
Green and AEC logo added
V4.0
2007-06-11
Disclaimer re-newed
V4.1
2010-07-10
Due to Cu wire bonding, package name changed from PG-DSO-20-37 to
PG-DSO-20-65
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D a t a s h e e t T L E 6 2 2 8 G P
Edition 2010-07-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regard­
ing the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any
kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the ex­
press written approval of Infineon Technologies, if a failure of such components can reasonably be ex­
pected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
that device or system. Life support devices or systems are intended to be implanted in the human body
or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to as­
sume that the health of the user or other persons may be endangered.
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