PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS ® FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Features DAB Drive-up at 28 Volts 35 -20 30 -25 -30 Regrowth 20 -35 Efficiency 15 -40 10 -45 5 -50 Spectral Regrowth (dBc) Drain Efficiency (%) VDD = 28 V, f = 1500 MHz, IDQ = 1.5 A, DAB mode 2 25 PTF141501E Package H-30260-2 • Thermally-enhanced package, pB-free and RoHS-compliant • Broadband internal matching • Typical DAB Mode 2 performance at 1500 MHz, 32 V - Average output power = 50 W - Efficiency = 28% - Spectral regrowth = –30 dBc - ∆ 975 kHz fC • Typical DAB Mode 2 performance at 1500 MHz, 28 V - Average output power = 40 W - Efficiency = 26% - Spectral regrowth = –31 dBc - ∆ 975 kHz fC • Typical CW performance, 1500 MHz, 28 V - Minimum output power = 150 W - Linear gain = 16.5 dB - Efficiency = 48% at P–1dB • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 28 V, 150 W (CW) output power -55 0 0 10 20 30 40 50 60 Output Power (W) Average RF Characteristics DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 32 V, IDQ = 1.5 A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC ∆ 975 kHz Characteristic Symbol Min Typ Max Unit RGTH — –30 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 29 — % Spectral Regrowth All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 12 Rev. 04, 2008-02-13 PTF141501E RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 150 WPEP, f = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.5 — dB Drain Efficiency ηD 35 — — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.5 A VGS 2.5 3.3 4.0 V Gate Leakage Current VGS = +10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 438 W 2.5 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.4 °C/W Ordering Information Type Package Outline Package Description Marking PTF141501E H-30260-2 Thermally-enhanced slotted flange, single-ended PTF141501E *See Infineon distributor for future availability. Data Sheet 2 of 12 Rev. 04, 2008-02-13 PTF141501E CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 1.5 A, POUT (CW) = 30 W -20 30 -25 25 -30 Efficiency -35 Regrowth 15 -40 10 -45 5 -50 -55 0 0 10 20 30 40 50 60 Drain Efficiency 25 -5 20 -10 15 -15 Gain 10 -20 Return Loss -25 5 0 1400 1450 1500 -30 1600 1550 Output Power (W) Average Frequency (MHZ) CW Sweep for Varying Bias Conditions Intermodulation Distortion Products vs. Output Power VDD = 28 V, f = 1500 MHz VDD = 28, IDQ = 1.5 A, f = 1.5 GHz, tone spacing = 1 MHz 17 Intermodulation Distortion (dBc) -25 IDQ = 1.5 A Gain (dB) 0 IDQ = 1.2 A 16 IDQ = 0.9 A IDQ = 0.6 A 15 14 1 10 100 -30 -35 35 Drain Efficiency -40 1000 IM5 -45 25 -50 -55 15 IM7 -60 -65 0 20 40 60 80 5 100 Output Power (W) Average Output Power (W) CW Data Sheet 45 IM3 Drain Efficiency (%) . 20 30 Input Return Loss (dB) 35 Gain (dB) and Drain Efficiency (%) . DAB Drive-up at 32 Volts VDD = 32, IDQ = 1.5 A, f = 1500 MHz, DAB Mode 2 Spectral Regrowth (dBc) Drain Efficiency (%) . Typical Performance 3 of 12 Rev. 04, 2008-02-13 PTF141501E Typical Performance (cont.) Intermodulation Distortion vs. Output Power for Various I DQ Bias Voltage vs. Temperature Voltage normalized to typical gate voltage. Series show current. VDD = 28, f = 1.5 GHz -25 -30 Normalized Bias Voltage IDQ = 1.1 A IM3 (dBc) -35 -40 -45 IDQ = 1.3 A -50 IDQ = 1.5 A -55 -60 IDQ = 1.7 A -65 IDQ = 1.9 A -70 0 50 100 1.04 0.90 A 1.03 2.10 A 1.02 4.50 A 1.01 7.50 A 1.00 10.50 A 0.99 13.50 A 0.98 0.97 0.96 0.95 -20 150 0 Output Power (W) Average 20 40 60 80 100 Case Temperature (ºC) D GE NE Broadband Circuit Impedance, 1500 MHz D Z Source Z0 = 50 Ω Z Load 0.1 Z Load 1600 MHz R jX R jX 1400 5.00 –6.70 0.94 1.27 1450 4.50 –5.90 0.90 1.73 1500 4.20 –5.10 0.86 2.21 1550 3.90 –4.30 0.82 2.60 1600 3.70 –3.70 0.80 3.05 Data Sheet 4 of 12 0.2 1400 MHz Z Source 1600 MHz 0.1 1400 MHz --- MHz D LOA D S T OW AR NGT H Z Load Ω ELE WAV Z Source Ω Frequency 0 .0 S 0.1 G Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1500 MHz C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 5.1K V C4 10µF 35V R6 10 V C5 0.1µF L1 R7 5.1K V C10 13pF C6 7.5pF l6 l1 C12 0.1µF C19 33pF DUT l2 V DD C13 10µF 35V l7 C7 33pF RF_IN C11 1µF l3 l4 C8 0.3pF C9 2.4pF l5 l9 l10 l11 l12 l13 C18 0.7pF l8 l14 RF_OUT C20 0.3pF L2 C14 13pF C15 1µF C16 0.1µF C17 10µF 35V 141501a-1500_sch Reference Circuit Schematic for 1500 MHz Circuit Assembly Information DUT PTF141501E PCB 0.76 mm [0.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 LDMOS Transistor TMM4 Electrical Characteristics at 1500 MHz 1 Dimensions: L x W (mm) 0.043 λ, 50.0 Ω 4.67 x 1.47 0.118 λ, 42.0 Ω 12.70 x 1.85 0.015 λ, 42.0 Ω 1.57 x 1.85 0.012 λ, 14.7 Ω 1.22 x 7.57 0.052 λ, 8.0 Ω 5.08 x 15.19 0.182 λ, 60.0 Ω 20.17 x 0.97 0.283 λ, 63.0 Ω 31.45 x 0.89 0.283 λ, 63.0 Ω 31.45 x 0.89 0.026 λ, 4.6 Ω 2.46 x 27.89 0.086 λ, 4.6 Ω 8.23 x 27.89 0.061 λ, 9.4 Ω 5.97 x 12.62 0.011 λ, 50.0 Ω 1.14 x 1.47 0.056 λ, 50.0 Ω 6.10 x 1.47 0.010 λ, 50.0 Ω 1.07 x 1.47 2 oz. copper, both sides Dimensions: L x W (in.) 0.185 x 0.058 0.500 x 0.073 0.062 x 0.073 0.048 x 0.298 0.200 x 0.598 0.794 x 0.038 1.238 x 0.035 1.238 x 0.035 0.097 x 1.098 0.324 x 1.098 0.235 x 0.497 0.045 x 0.058 0.240 x 0.058 0.042 x 0.058 1Electrical Characteristics are rounded. Data Sheet 5 of 12 Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1500 MHz (cont.) R5 C5 R4 R3 C3 C1 10 35V R2 LM QQ1 C2 C10 C11 R6 C6 R7 L1 Q1 10 35V + R1 C12 R5 C5 R4 R3 C3 C1 C13 RF_OUT C16 C8 C9 C17 C18 VDD C20 C19 C7 VDD VDD C4 10 + 35V R2 LM QQ1 C2 + RF_IN + C4 VDD R6 C6 R7 L2 10 35V C15 C14 R1 Q1 141501ef-1500_dtl 141501ef-1500_assy Reference circuit (not to scale)* Component C1, C2, C3 C4, C13, C17 C5, C12, C16 C6 C7 C8 C9 C10, C14 C11, C15 C18 C19 C20 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6 Description Capacitor, 0.001 µF, 50 V, 0603 Capacitor, 10 µF, 35 V, SMD Capacitor, 0.1 µF, 50 V, 1206 Capacitor, 7.5 pF Capacitor, 33 pF Capacitor, 0.3 pF Capacitor, 2.4 pF Capacitor, 13 pF Capacitor, 1 µF, 50 V Capacitor, 0.7 pF Capacitor, 33 pF Capacitor, 0.3 pF Ferrite, 6 mm Transistor Voltage regulator Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Resistor, 2 k-ohms, 1/10 W, 0603 Potentiometer, 2 k-ohms, 0.25 W Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 10 ohms, 1/4 W, 1206 Suggested Manufacturer Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key ATC ATC ATC Philips Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND PCS6106TR-ND, Tant. TE Series P4525-ND 100A 7R5 100A 330 100A 0R3 100A 2R4 100B 130 19528-ND 100B 0R7 100B 330 100B 0R3 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KGCT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber files for this circuit are available on request. Data Sheet 6 of 12 Rev. 04, 2008-02-13 PTF141501E Alternate Application for 1600 MHz Typical Performance Frequency Sweep, 1.6 – 1.7 GHz CW Power Sweep (1600 MHz application circuit) VDD = 28 V, IDQ = 1.2 A VDD = 28 V, IDQ = 1.2 A, f = 1675 MHz 50 Gain (dB) Gain 30 15 20 14 Efficiency 13 0 20 40 60 10 16 Gain (dB) 40 16 17 Drain Efficiency (%) 17 15 14 0 80 100 120 140 160 180 13 1580 1600 1620 1640 1660 1680 1700 1720 Output Power (W) Frequency (MHz) 2-Tone Drive-up at Optimum Current VDD = 28 V, IDQ = 1.2 A, f1 = 1675 MHz, f2 = 1676 MHz 0 35 -10 Efficiency IMD (dBc) -20 30 25 -30 20 3rd Order -40 15 5th 7th -50 -60 10 5 -70 0 20 40 60 80 0 100 Output Power (W) Average Data Sheet 7 of 12 Rev. 04, 2008-02-13 PTF141501E Broadband Circuit Impedance, 1600 MHz Z Source Ω Frequency 0.1 0.0 D LOA D S T OW AR jX 1600 9.5 –5.6 0.9 –5.8 1625 9.6 –5.2 0.8 –5.4 1650 9.8 –5.0 0.8 –5.2 1675 9.9 –4.7 0.8 –5.0 1700 10.0 –4.4 0.8 –4.8 Z0 = 50 Ω Z Source Z Load NGT H - W AV S R 0.5 G jX 0.4 Z Load R 0.3 Z Source Z Load Ω MHz 0.2 D 1700 MHz 1600 MHz 1600 MHz <--- EL E W AV 0.1 1700 MHz See next page for alternate Reference Circuit, 1600 MHz Data Sheet 8 of 12 Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1600 MHz C18 0.001µF R4 1.3kV R3 1.2kV QQ1 LM7805 Q1 BCP56 C19 0.001µF VDD C20 0.001µF R6 24kV R5 10KV R7 3.3kV + C1 10µF 35V R1 10V C2 0.1µF L1 R2 5.1kV C3 7.5pF C6 13pF l6 C7 1µF C8 0.1µF V DD + C9 10µF 35V l7 DUT RF_IN l1 l2 C4 15pF l3 l4 RF_OUT l5 l9 C5 1.7pF l10 l11 l 12 l13 C10 7.5pF l8 L2 C11 13pF C12 1µF C13 0.1µF + C14 10µF 35V 141501a- 1600_sch Reference Circuit Schematic for 1600 MHz Circuit Assembly Information DUT PTF141501E PCB 0.76 mm [0.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 Electrical Characteristics1 at 1500 MHz 0.043 λ, 50.0 Ω 0.065 λ, 42.0 Ω 0.065 λ, 42.0 Ω 0.012 λ, 14.7 Ω 0.052 λ, 8.0 Ω 0.182 λ, 60.0 Ω 0.283 λ, 63.0 Ω 0.283 λ, 63.0 Ω 0.112 λ, 4.6 Ω 0.016 λ, 9.4 Ω 0.053 λ, 34.0 Ω 0.011 λ, 50.0 Ω 0.066 λ, 50.0 Ω LDMOS Transistor TMM4 2 oz. copper, both sides Dimensions: L x W (mm) 4.67 x 1.47 6.73 x 1.85 6.73 x 1.85 1.22 x 7.57 5.08 x 15.19 20.17 x 0.97 31.45 x 0.89 31.45 x 0.89 10.67 x 27.89 1.52 x 27.89 5.72 x 12.62 1.14 x 1.47 7.17 x 1.47 Dimensions: L x W (in.) 0.185 x 0.058 0.265 x 0.073 0.265 x 0.073 0.048 x 0.298 0.200 x 0.598 0.794 x 0.038 1.238 x 0.035 1.238 x 0.035 0.420 x 1.098 0.060 x 0.497 0.225 x 0.100 0.045 x 0.058 0.282 x 0.058 1Electrical Characteristics are rounded. Data Sheet 9 of 12 Rev. 04, 2008-02-13 PTF141501E Reference Circuit for 1600 MHz (cont.) C18 R7 C2 R5 R6 C20 35V LM R4 QQ1 C19 C6 C7 Q1 R1 C3 R2 R3 VDD C9 C4 + C8 C10 RF_OUT C5 C1 C13 C14 VDD 10 35V R4 R3 R1 C3 R2 LM QQ1 C19 Q1 + RF_IN L1 10 35V + 10 + C1 C18 R7 C2 R5 R6 C20 VDD VDD 10 35V C12 L1 141501ef-1600_dtl C11 141501ef - 1600_assy Reference circuit for 1600 MHz* (not to scale) Component C1, C9, C14 C2, C8, C13 C3 C4 C10 C5 C6, C11 C7, C12 C18, C19, C20 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Description Capacitor, 10 µF, 35 V, Tant. TE Series Capacitor, 0.1 µF, 50 V, 1206 Capacitor, 7.5 pF Capacitor, 15 pF Capacitor, 7.5 pF Capacitor, 1.7 pF Capacitor, 13 pF Capacitor, 1 µF, 50 V Capacitor, 0.001 µF, 50 V, 0603 Ferrite, 6 mm Transistor Voltage regulator Resistor, 10 ohms, 1/4W, 1206 Resistor, 5.1 k-ohms, 1/4W, 1206 Resistor, 1.2 k-ohms, 1/10W, 0603 Resistor, 1.3 k-ohms, 1/10W, 0603 Potentiometer, 10 k-ohms, 0.25W Resistor, 24 k-ohms, 1/10W, 0603 Resistor, 3.3 k-ohms, 1/4W, 1206 Suggested Manufacturer Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key Digi-Key Philips Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCS6106TR-ND, SMD P4525-ND 100A 7R5 100B 150 100B 7R5 100B 1R7 100B 130 19528-ND PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ECT-ND P5.1KECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P24KGCT-ND P3.3KECT-ND *Gerber files for this circuit are available on request. Data Sheet 10 of 12 Rev. 04, 2008-02-13 PTF141501E Package Outline Specifications Package H-30260-2 45° X 2.03 [.080] 2X 12.70 [.500] 4X R 1.52 [.060] C L D (2X 4.83±0.50 [.190±.020]) S LID 13.21 +0.10 –0.15 +.004 [.520 –.006 ] 2X 3.25 [.128] C L FLANGE 13.72 [.540] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G 27.94 [1.100] SPH 1.57 [.062] 22.35±0.23 [.880±.009] C L 4.11±0.38 [.162±.015] 0.0381 [.0015] -A2 6 0 -c a s e s _ 3 0 2 6 0 1 / 1 -1 5 -0 7 34.04 [1.340] 1.02 [.040] Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 11 of 12 Rev. 04, 2008-02-13 PTF141501E Confidential – Limited Internal Distribution Revision History: 2008-02-13 2005-08-30, Data Sheet Previous Version: Page All Data Sheet Subjects (major changes since last revision) Remove references to alternate products. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-02-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2003 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 of 12 Rev. 04, 2008-02-13