PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 35 Efficiency -35 25 IM3 -40 20 -45 15 ACPR 5 33 35 37 39 41 Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = 27.0% - Intermodulation distortion = –38 dBc - Adjacent channel power = –44 dBc • Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 68 W - Efficiency = 58.5% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power 10 -55 31 • 30 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -25 -50 PTFA210601F Package H-37265-2 Features 2-Carrier WCDMA Drive-up -30 PTFA210601E Package H-36265-2 43 Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 12 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.0 — dB Drain Efficiency ηD 26.0 27.0 — % Intermodulation Distortion IMD — –38 –37 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 16 — dB Drain Efficiency ηD — 42 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.15 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 196 W 1.12 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.89 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA210601E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210601E PTFA210601F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210601F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Broadband Performance 2-Tone Drive-up VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz 35 -10 Return Loss 30 -15 -20 Efficiency 20 -25 15 -30 Gain 10 -35 2070 2090 2110 2130 2150 2170 2190 2210 -30 -35 -40 35 IM5 IM3 30 -45 25 -50 20 -55 15 IM7 10 -60 5 -65 35 37 Frequency (MHz) 39 41 43 45 47 49 Output Power, PEP (dBm) Two-carrier WCDMA at Selected Biases Power Sweep, CW Conditions VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 28 V, IDQ = 550 mA, f = 2170 MHz TCASE = 25°C 17 -30 65 TCASE = 90°C 450 mA 16 -35 650 mA -40 55 500 mA Gain (dB) 3rd Order IMD (dBc) 40 Efficiency -45 600 mA -50 Gain 15 45 14 35 13 550 mA 25 Efficiency 12 -55 31 33 35 37 39 41 15 0 43 10 20 30 40 50 60 70 Output Power (W) Output Power, PEP (dBm) Data Sheet Drain Efficiency (%) 25 45 -25 Drain Efficiency (%) -5 Intermodulation Distortion (dBc) 40 Input Return Loss (dB) Gain (dB), Efficiency (%) Typical Performance (data taken in a production test fixture) 3 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Typical Performance (cont.) Single-carrier WCDMA Drive-up IM3, Drain Efficiency and Gain vs. Supply Voltage IDQ = 550 m A, f = 2140 MHz, POUT (PEP) = 47.8 dBm , tone spacing = 1 MHz 30 Efficiency 25 -35 20 -40 -45 15 ACPR Up 10 -50 ACPR Low 3rd Order Intermodulation Distortion (dBc) -30 -10 32 34 36 38 40 42 50 -15 45 Efficiency -20 40 -25 35 IM3 Up -30 30 25 -35 20 Gain -40 15 -45 5 -55 55 10 23 44 24 Average Output Power (dBm) 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Intermodulation Distortion Products vs. Tone Spacing Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, POUT = 47.8 dBm PEP 0.56 A Normalized Bias Voltage (V) Intermodulation Distortion (dBc) -20 3rd Order -25 -30 -35 5th -40 -45 -50 7th 5 10 15 20 25 30 35 40 1.11 A 1.02 1.67 A 2.22 A 1.01 2.78 A 1.00 3.33 A 3.89 A 0.99 4.44 A 0.98 5.00 A 0.97 0 20 40 60 80 100 Case Temperature (°C) Tone Spacing (MHz) Data Sheet 1.03 0.96 -20 -55 0 Gain (dB), Drain Efficiency (%) 35 -25 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW 4 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F R --> Broadband Circuit Impedance RD G E NE RA T O Z Source Ω Frequency Z Load Ω MHz R jX R jX 2070 10.29 –5.79 4.91 1.57 2110 9.46 –6.02 4.83 1.75 2140 8.79 –5.95 4.85 2.12 2170 8.14 –5.91 4.76 2.38 2210 7.19 –5.72 4.66 2.55 0.4 0.3 0.2 0.1 0.0 2070 MHz Z Source 2210 MHz 0.1 2070 MHz <--- S Z Load 2210 MHz WAV G DT OW ARD LOA GTHS EL EN - W AV E LE NGT H S T OW A Z Load 0 .1 Z Source Z0 = 50 Ω 0.2 D 0. 2 See next page for reference circuit information Data Sheet 5 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2KV R4 2KV R5 10 V C4 10µF 35V R6 1KV C5 .1µF R8 1KV C6 .1µF R7 1KV C7 .01µF C8 10pF C11 10pF l7 C12 .02µF C13 1µF C14 1µF C15 .1µF C16 22µF 50V V DD R9 10 V l10 l6 C9 10pF RF_IN l1 C18 10pF DUT l2 l3 l4 l5 l8 l9 C10 1.5pF l11 l12 l13 RF_OUT C17 0.7pF a210601ef _sch Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PCB PTFA210601E or PTFA210601F 0.76 mm [.030"] thick, εr = 3.48 LDMOS Transistor Rogers 4350 1 oz. copper Microstrip Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 0.030 0.038 0.146 0.049 0.016 0.009 0.112 0.018 0.105 0.173 0.051 0.077 0.032 λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 6.2 Ω λ, 6.2 Ω λ, 80.0 Ω λ, 80.0 Ω λ, 8.5 Ω λ, 8.5 Ω λ, 67.0 Ω λ, 41.0 Ω λ, 41.0 Ω λ, 50.0 Ω 2.54 x 1.52 3.15 x 1.52 12.32 x 1.52 3.81 x 22.78 1.17 x 22.78 0.74 x 0.69 9.78 x 0.69 1.35 x 16.26 8.08 x 16.26 14.83 x 1.02 4.11 x 2.29 6.35 x 2.29 2.79 x 1.52 0.100 0.124 0.485 0.150 0.046 0.029 0.385 0.053 0.318 0.584 0.162 0.250 0.110 x x x x x x x x x x x x x 0.060 0.060 0.060 0.897 0.897 0.027 0.027 0.640 0.640 0.040 0.090 0.090 0.060 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Reference Circuit (cont.) QQ1 C3 C5 + 10 35V R3 R2 C4 R6 R7 C6 R1 C1 LM VDD C2 C14 C13 C11 Q1 R8 C7 C8 C15 22 HHD 4 V6 R4 R5 C16 C12 R9 RF_IN RF_OUT C10 C17 C18 a2 1060 1ef _assy C9 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C15 C7 C8, C9, C11, C18 C10 C12 C13, C14 C16 C17 Q1 QQ1 R1 R2 R3 R4 R5, R9 R6, R7, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 0.01 µF Ceramic capacitor, 10 pF Ceramic capacitor, 1.5 pF Capacitor, 0.02 µF Capacitor, 1.0 µF Electrolytic capacitor, 22 µF, 50 V Ceramic capacitor, 0.7 pF Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 10 ohms Chip resistor, 1k ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 103 100B 100 100B 1R5 200B 203 445-1411-1-ND PCE3374CT-ND 100B 0R7 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Package Outline Specifications Package H-36265-2 2X 7.11 [.280] (45° X 2.03 [.080]) CL D 2.59±0.51 [.102±.020] S C L FLANGE 9.78 [.385] 15.34±0.51 [.604±.020] LID 10.16±0.25 [.400±.010] G 2x 7.11 [.280] 2X R1.60 [R.063] 4X R1.52 [R.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.56±0.38 [.140±.015 0.0381 [.0015] -A- 20.31 [.800] 2 0 0 7 1 - 1 1 - 6 _ h 3 - 6 + 3 7 2 6 5 _ P O s .v s d _ h 3 - 6 2 6 5 -2 1.02 [.040] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 03, 2007-11-19 PTFA210601E PTFA210601F Package Outline Specifications (cont.) Package H-37265-2 (45° X 2.03 [.080]) CL 2.59±0.51 [.102±.020] D LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] CL 15.34±.51 [.604±.020] 10.16 [.400] G 2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX LID 10.16±0.25 [.400±.010] SPH 1.57 [.062] | 0.025 [.001]| -A3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] 0 7 1 1 1 9 _ h - 3 6 + 3 7 2 6 5 _ P O s _ h - 3 7 2 6 5 - 2 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 03, 2007-11-19 PTFA210601E/F Confidential, Limited Internal Distribution Revision History: 2007-11-19 2007-03-02, Data Sheet Previous Version: Page 1, 2, 8, 9 Data Sheet Subjects (major changes since last revision) Update to product V4, with new package technologies. Update package outline diagrams. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-11-19 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2007-11-19