INFINEON PTFA212001F

PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
PTFA212001F
Package H-37260-2
Features
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
30
Efficiency
-28
Thermally-enhanced packages, Pb-free and
RoHS compliant
•
Broadband internal matching
•
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
•
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
- Efficiency = 34%
- Adjacent channel power = –37 dBc
•
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
25
-33
20
-38
15
IM3
-43
10
-48
5
ACPR
-53
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-23
•
0
34
36
38
40
42
44
46
48
Average Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.3
15.8
—
dB
Drain Efficiency
ηD
26.5
28
—
%
Intermodulation Distortion
IMD
—
–35.5
–34
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
15.8
—
dB
Drain Efficiency
ηD
—
38.5
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 30 V, V GS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.05
—
Ω
Operating Gate Voltage
VDS = 30 V, IDQ = 1.6 A
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Data Sheet
2 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
625
W
3.57
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 200 W CW)
RθJC
0.28
°C/W
Ordering Information
Type and Version
Package Type
Package Description
Marking
PTFA212001E
V4
H-36260-2
Thermally-enhanced slotted flange, single-ended
PTFA212001E
PTFA212001F
V4
H-37260-2
Thermally-enhanced earless flange, single-ended
PTFA212001F
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
Broadband Performance
VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
VDD = 30 V, IDQ = 1600 mA, POUT = 50.0 dBm
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-35
2.0 A
1.4 A
-40
-45
-50
1.8 A
1.6 A
-55
35
37
39
41
43
45
-10
30
-15
25
Efficiency
-20
20
15
10
2050
47
-5
Return Loss
-25
-30
Gain
2090
2130
2170
2210
Input Return Loss (dB)
35
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
-30
-35
2250
Frequency (MHz)
Average Output Power (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
TCASE = 25°C
50
16
40
Gain
15
30
Efficiency
14
20
13
0
40
80
120
160
200
10
240
ACPR Up
ACPR Low
-35
-40
-45
20
-50
-55
0
33
35
39
41
43
45
47
Voltage Sweep
2-Tone Drive-up at Optimum IDQ
IDQ = 1600 mA, ƒ = 2140 MHz,
VDD = 30 V, IDQ = 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
50
40
35
IM3 Up
30
-30
25
-35
20
Gain
-40
15
-45
10
25
27
29
31
Intermodulation Distortion (dBc)
Efficiency
-20
49
-20
Gain (dB), Drain Efficiency (%)
45
-15
3rd Order IMD (dBc)
37
Average Output Power (dBm)
-10
33
50
-25
45
Efficiency
-30
-35
40
35
IM3
-40
30
-45
25
IM5
-50
20
-55
15
-60
10
-65
5
IM7
-70
39
Supply Voltage (V)
Data Sheet
10
ACPR
tone spacing = 1 MHz, POUT (PEP) = 53 dBm
23
30
Efficiency
Output Power (W)
-25
40
41
43
Drain Efficiency (%)
Gain (dB)
17
Adjacent Channel Power Ratio (dB)
60
TCASE = 90°C
Drain Efficiency (%)
18
Drain Efficiency (%)
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz
0
45
47
49
51
53
55
Output Power, PEP (dBm)
4 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz
100
17
–15°C
16
Power Gain (dB)
Probability (%)
10
48 dBm
1
46 dBm
52 dBm
0.1
Input
50.5 dBm
0.01
25°C
15
85°C
14
13
50 dBm
12
0.001
1
2
3
4
5
6
7
1
8
10
1000
Output Power (W)
Peak-to-Average (dB)
Intermodulation Distortion Products
vs. Tone Spacing
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
VDD = 30 V IDQ = 1600 m A, ƒ = 2140 MHz,
POUT = 53 dBm PEP
0.44 A
1.03
Normalized Bias Voltage (V)
-15
Intermodulation Distortion (dBc)
100
-20
3rd order
-25
-30
-35
-40
5th
-45
-50
7th
0
10
20
30
40
3.30 A
1.00
6.61 A
0.99
9.91 A
0.98
13.22 A
16.52 A
0.97
0.96
0
20
40
60
80
100
Case Temperature (°C)
Tone Spacing (MHz)
Data Sheet
2.20 A
1.01
0.95
-20
-55
1.32 A
1.02
5 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Ω
Frequency
D
Z Source
Z Load
G
MHz
R
jX
R
jX
2080
18.2
4.1
1.1
2.5
2110
19.0
3.2
1.0
2.8
2140
19.8
2.3
1.0
3.0
2170
20.4
1.0
1.0
3.2
2200
20.8
–0.6
1.0
3.5
RD G
ENE
S
Z Load Ω
Z Load
Z Source
0.5
0.4
2080 MHz
0.2
0.1
0 .0
OW ARD LOA D -
2200 MHz
2080 MHz
0.3
0 .1
- W AV E LE NGT H
S T OW
A
Z0 = 50 Ω
2200 MHz
See next page for circuit information
Data Sheet
6 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R1
1.2K V
QQ1
LM7805
V DD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R6
5.1K V
R8
2K V
C4
4.7µF
16V
R5
2K V
C5
0.1µF
L1
VD D
C13
8.2pF
C6
7.5pF
l1
l2
C7
8.2pF
l3
C25
0.4pF
DUT
l4
l5
l6
C8
0.2pF
C15
1µF
l7
l12
l13
l14
C11
0.1µF
C18
10µF
50V
l15
C29
8.2pF
l16
l17
C28
0.5pF
C26
0.4pF
l11
l9
C27
0.5pF
R7
5.1K V
C10
4.7µF
16V
C17
0.1µF
C16
1µF
l10
l8
C9
0.9pF
RF_IN
C14
2.2µF
RF_OUT
2 1 2 0 0 1 e f_ s c h
a
R2
1.3K V
L2
C12
7.5pF
C19
8.2pF
C20
2.2µF
C21
1µF
C22
1µF
C23
0.1µF
C24
10µF
50V
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PTFA212001E or PTFA212001F
PCB
0.76 mm [.030"] thick, εr = 3.48
Microstrip
l1
l2
l3
l4
l5 (taper)
l6
l7
l8, l9
l10, l11
l12
l13 (taper)
l14 (taper)
l15 (taper)
l16
l17
LDMOS Transistor
Rogers RO4350
Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm)
0.042
0.048
0.026
0.059
0.062
0.015
0.028
0.136
0.254
0.071
0.019
0.026
0.026
0.029
0.107
λ, 50.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω
λ, 50.0 Ω / 6.9 Ω
λ, 6.9 Ω
λ, 6.9 Ω
λ, 60.0 Ω
λ, 51.2 Ω
λ, 5.0 Ω
λ, 5.0 Ω / 6.8 Ω
λ, 6.8 Ω / 13.5 Ω
λ, 13.5 Ω / 40.9 Ω
λ, 40.9 Ω
λ, 50.0 Ω
3.56 x 1.68
4.11 x 1.68
2.08 x 1.68
5.03 x 1.68
5.00 x 1.68 / 20.32
1.14 x 20.32
2.16 x 20.32
11.63 x 1.27
21.51 x 1.65
5.49 x 28.83
1.52 x 28.83 / 20.62
2.11 x 20.62 / 9.65
2.06 x 9.65 / 2.34
2.77 x 2.34
9.04 x 1.68
1 oz. copper
Dimensions: L x W (in.)
0.140 x 0.066
0.162 x 0.066
0.082 x 0.066
0.198 x 0.066
0.197 x 0.066 / 0.800
0.045 x 0.800
0.085 x 0.800
0.458 x 0.050
0.847 x 0.065
0.216 x 1.135
0.060 x 1.135 / 0.812
0.083 x 0.812 / 0.380
0.081 x 0.380 / 0.092
0.109 x 0.092
0.356 x 0.066
1Electrical characteristics are rounded.
Data Sheet
7 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350_.030
V DD
RO4350_.030
C13
C2
C1
C14
R3
R8
QQ1
Q1
C3
C15
C16
R1
C5 R6 C6
R5
C4
C9
C7
C8
C10
L1
C18
R2
VDD
C25
C17
C27
RF_OUT
RF_IN
C28
C29
C23
VDD
C26
C11 C12
C24
L2
C21
C22
C19
R7
C20
A212001IN_01
A212001out_01
a212001ef_assy
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4, C10
C5, C11, C17, C23
C6, C12
C7, C13, C19, C29
C8
C9
C14, C20
C15, C16, C21, C22
C18, C24
C25, C26
C27, C28
L1, L2
Q1
QQ1
R1
R2
R3, R5
R4
R6, R7
R8
Capacitor, 0.001 µF
Capacitor, 4.7 µF, 16 V
Capacitor, 0.1 µF
Ceramic capacitor, 7.5 pF
Ceramic capacitor, 8.2 pF
Ceramic capacitor, 0.2 pF
Ceramic capacitor, 0.9 pF
Capacitor, 2.2 µF
Ceramic capacitor, 1 µF
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 0.4 pF
Ceramic capacitor, 0.5 pF
Ferrite, 8.9 mm
Transistor
Voltage regulator
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
not used
Chip resistor 5.1 k-ohms
Potentiometer 2 k-ohms
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
Digi-Key
Digi-Key
Garrett Electronics
ATC
ATC
Elna Magnetics
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS3475CT-ND
PCC104BCT-ND
100B 7R5
100B 8R2
600S 0R2 BT
600A 0R9 BT
445-1474-2-ND
445-1411-2-ND
TPSE106K050R0400
100B 0R4
100B 0R5
BDS 4.6/3/8.9-4S2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
Digi-Key
Digi-Key
P5.1KECT-ND
3224W-202ETR-ND
* Gerber Files for this circuit available on request
Data Sheet
8 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
45° X 2.03
[.080]
2X 12.70
[.500]
4X R 1.52
[R.060]
C
L
4.83±0.50
[.190±.020]
D
S
+0.10
LID 13.21 –0.15
FLANGE 13.72
[.540]
C
L
[.520 +.004]
–.006
23.37±0.51
[.920±.020]
2X R1.63
[R.064]
G
27.94
[1.100]
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
C
L
4.11±0.38
[.162±.015]
0.0381 [.0015] -A34.04
[1.340]
1.02
[.040]
h
- 3 6 + 3 7 2 6 0 - 2 _ 3 6 2 6 0
/
0 4 - 2 5 - 0 8
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
45° X 2.031
[.080]
2X 12.70
[.500]
CL
4.83±0.50
[.190±.020]
D
13.72
[.540]
C
L
LID 13.21 +0.10
–0.15
[.520 +.004 ]
–.006
23.37±0.51
[.920±.020]
G
+0.381
4X R0.508 –0.127
[R.020 +.015 ]
–.005
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.0381 [.0015]
-Ah - 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 0
/ 4 - 2 5 - 0 8
1.02
[.040]
S
SPH 1.57
[.062]
FLANGE 23.11
[.910]
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 05.1, 2009-02-24
PTFA212001E/F
Confidential, Limited Internal Distribution
Revision History:
2009-02-24
2007-12-05, Data Sheet (2006-06-12, Preliminary Data Sheet)
Previous Version:
Data Sheet
Page
1, 2, 9, 10
Subjects (major changes since last revision)
Update product to V4, with new package technologies. Update package outline diagrams.
1, 2
8
Update gain specifications.
Fixed typing error
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 05.1, 2009-02-24