INFINEON PTFA192401F

PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
Efficiency
30
-35
25
ACPR Low
-45
20
-50
15
-55
10
-60
•
Pb-free, RoHS-compliant and thermally-enhanced
packages
•
Broadband internal matching
•
Typical two-carrier WCDMA performance at
1960 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –41 dBc
•
Typical single-carrier WCDMA performance at
1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel power = –33 dBc
•
Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 5:1 VSWR @ 30 V, 240 W
(CW) output power
5
ACPR Up
-65
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
35
-25
-40
PTFA192401F
Package H-37260-2
Features
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
-30
PTFA192401E
Package H-36260-2
-70
0
34
36
38
40
42
44
46
48
50
Average Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15
16
—
dB
Drain Efficiency
ηD
25
27
—
%
Intermodulation Distortion
IMD
—
–36
–34
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
15.8
—
dB
Drain Efficiency
ηD
—
40
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.03
—
Ω
Operating Gate Voltage
VDS = 30 V, IDQ = 1.6 A
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
761
W
4.35
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 50 W WCDMA)
RθJC
0.23
°C/W
Data Sheet
2 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Type
Package Description
Marking
PTFA192401E
V4
H-36260-2
Thermally-enhanced slotted flange, single-ended
PTFA192401E
PTFA192401F
V4
H-37260-2
Thermally-enhanced earless flange, single-ended
PTFA192401F
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
Broadband Performance
VDD = 30 V, IDQ = 1600 mA,
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
ƒ 1 = 1957.5 MHz, ƒ2 = 1962.5 MHz
-30
IM3
IM5
-40
-50
IM7
-60
10
100
1000
Output Power, PEP (W)
35
Input Return Loss
-10
-15
30
25
Efficiency
-25
20
15
10
1860
-20
-30
Gain
1890
1920
1950
1980
2010
Input Return Loss (dB)
Up
Low
Gain (dB), Efficiency (%)
Intermodulation Distortion (dBc)
-5
40
-20
-35
2040
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz
VDD = 30 V IDQ = 1800 mA , ƒ = 1960 MHz,
POUT = 53 dBm PEP
65
55
Gain
15
45
14
35
TCASE = 25°C
13
Efficiency
25
Intermodulation Distortion (dBc)
Gain (dB)
16
-20
Drain Efficiency (%)
17
TCASE = 90°C
12
15
0
40
80
120
160
200
-25
-30
3rd Order
-35
-40
5th
-45
-50
7th
-55
240
0
5
10
20
25
30
35
40
Tone Spacing (MHz)
Output Power (W)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA at Selected Biases
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing
VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
-25
30
-30
Efficiency
25
-35
IM3
20
-35
-40
15
-45
10
-50
ACPR
-55
5
-60
3rd Order IMD (dBc)
-30
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
15
36
38
40
42
44
46
-45
1.4 A
1.6 A
-50
34
48
Output Power, avg. (dBm)
Data Sheet
1.8 A
-40
-55
0
34
2.2 A 2.0 A
36
38
40
42
44
46
Output Power, PEP (dBm)
4 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz
100
18
Power Gain (dB)
48 dBm
1
52 dBm
0.1
51.0 dBm
0.01
50 dBm
46 dBm
Input
25C
16
85C
15
14
13
12
0.001
1
2
3
4
5
6
7
1
8
10
Voltage Sweep
Two-tone Drive-up
IDQ = 1600 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
45
-30
40
Efficiency
-40
35
30
-45
25
IM5
-50
20
-55
15
IM7
-60
-65
-10
3rd Order Intermodulation
Distortion (dBc)
-25
Drain Efficiency (%)
Intermodulation Distortion (dBc)
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
IM3
44
46
48
50
52
54
50
Efficiency
-20
40
IM3 Up
-30
30
-40
20
Gain
10
42
1000
Output Power (W)
Peak-to-Average (dB)
-35
100
-50
56
10
23
Output Power, PEP (dBm)
Gain (dB), Drain Efficiency (%)
Probability (%)
-15C
17
10
25
27
29
31
33
Supply Voltage (V)
Data Sheet
5 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Normalized Bias Voltage (V)
Voltage normalized to typical gate voltage,
series show current
1.03
0.44 A
1.02
1.32 A
1.01
2.20 A
3.30 A
1.00
6.61 A
0.99
9.91 A
0.98
13.22 A
0.97
16.52 A
0.96
0.95
-20
0
20
40
60
80
100
Case Temperature (°C)
D GE
NE R
AT O
R -->
Broadband Circuit Impedance
Z Load
0. 2
D
Z Source
Z0 = 50 Ω
Z Load
0.1
2020 MHz
1900 MHz
Z Load Ω
MHz
R
jX
R
jX
1900
8.43
–8.22
0.80
3.26
1930
8.00
–7.86
0.78
3.56
1960
7.57
–7.51
0.76
3.84
1990
7.19
–7.17
0.73
4.12
2020
6.86
–6.77
0.72
4.38
Data Sheet
6 of 11
0.3
0.2
0.1
0 .0
Z Source
0.1
2020 MHz
1900 MHz
AV
Z Source Ω
Frequency
W
<---
S
DT OW ARD L OA
GTHS
EL EN
G
0. 2
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R6
5.1K V
R8
2K V
C4
4.7µF
16V
R5
2K V
C5
0.1µF
L1
VDD
C6
10pF
C11
10pF
C14
2.2µF
C28
0.7pF
l 10
DUT
l2
l3
C15
0.1µF
C16
10µF
50V
l4
l6
l5
C17
100µF
50V
C25
0.3pF
C7
10pF
l1
C13
1µF
l 11
l7
J1
C12
1µF
l 14
l9
l 12
l 15
l 16
C27
0.5pF
C26
0.3pF
C30
0.7pF
C33
10pF
l 17
l 18
l 19
C29
0.7pF
C31
0.7pF
C32
0.6pF
l20
J2
l8
l 13
R7
5.1K V
C8
4.7µF
16V
C9
0.1µF
C10
10pF
L2
C18
10pF
C19
1µF
C20
1µF
C21
2.2µF
C22
0.1µF
C23
10µF
50V
C24
100µF
50V
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA192401E or PTFA192401F
PCB
0.76 mm [.030"] thick, RF35, εr = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip
Dimensions: L x W ( mm)
Dimensions: L x W (in.)
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10, l12
l11, l13
l14, l15
l16
l17
l18
l19
l20
Data Sheet
Electrical Characteristics at 1960 MHz
0.038 λ, 50.0 Ω
0.071 λ, 50.0 Ω
0.022 λ, 43.1 Ω
0.060 λ, 43.1 Ω / 6.9 Ω
0.040 λ, 6.9 Ω
0.026 λ, 6.9 Ω
0.123 λ, 59.9 Ω
0.010 λ, 5.0 Ω
0.027 λ, 51.0 Ω
0.228 λ, 51.0 Ω
0.028 λ, 5.0 Ω
0.011 λ, 5.0 Ω / 6.0 Ω
0.030 λ, 6.0 Ω / 12.3 Ω
0.019 λ, 12.3 Ω / 41.2 Ω
0.033 λ, 41.2 Ω
0.096 λ, 50.0 Ω
3.51 x 1.70
6.60 x 1.70
2.01 x 2.16
5.28 x 2.16 / 20.32
3.33 x 20.32
2.21 x 20.32
11.48 x 1.24
0.84 x 28.91
2.54 x 1.65
21.03 x 1.65
2.36 x 28.91
0.89 x 28.91 / 23.65
2.54 x 23.65 / 10.67
1.78 x 10.67 / 2.29
3.05 x 2.29
8.99 x 1.70
7 of 11
0.138
0.260
0.079
0.208
0.131
0.087
0.452
0.033
0.100
0.828
0.093
0.035
0.100
0.070
0.120
0.354
x 0.067
x 0.067
x 0.085
x 0.085 / 0.800
x 0.800
x 0.800
x 0.049
x 1.138
x 0.065
x 0.065
x 1.138
x 1.138 / 0.931
x 0.931/ 0.420
x 0.420 / 0.090
x 0.090
x 0.067
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
GND
VDD
V66100-G9258-D301-01-7631.dwg
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4, C8
C5, C9, C15, C22
C6, C10
C7, C33
C11, C18
C12, C13, C19, C20
C14, C21
C16, C23
C17, C24
C25, C26
C27
C28, C29, C30, C31
C32
L1, L2
Q1
QQ1
R1
R2
R3, R5
R4
R6, R7
R8
Capacitor, 0.001 µF
Capacitor, 4.7 µF, 16V
Capacitor, 0.1 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 10 pF
Capacitor, 10 pF
Ceramic capacitor, 1 µF
Capacitor, 2.2 µF
Tantalum capacitor, 10 µF, 50 V
Electrolytic capacitor, 100 µF, 50 V
Capacitor, 0.3 pF
Capacitor, 0.5 pF
Capacitor, 0.7 pF
Capacitor, 0.6 pF
Ferrite, 8.9mm
Transistor
Voltage regulator
Chip resistor 1.2k ohms
Chip resistor 1.3k ohms
Chip resistor 2k ohms
Chip resistor 10 ohms
Chip resistor 5.1k ohms
Potentiometer 2k ohms
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
AVX
Digi-Key
Digi-Key
Garrett Electronics
Digi-Key
AVX
AVX
AVX
ATC
Elna Magnetics
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS3475CT-ND
PCC104BCT-ND
100A 100
100B 100
08051J100GBTTR
445-1411-1-ND
445-1447-2-ND
TPSE106K050R0400
P5571-ND
08051J0R3BBTTR
08051J0R5BBTTR
08051J0R7BBTTR
600S0R6BT
BDS 4.6/3/8.9-4S2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
P10ECT-ND
P5.1KECT-ND
3224W-202ETR-ND
*Gerber files for this circuit available on request
Data Sheet
8 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
C66065-A2324-C001-01-0027
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Pins: D = drain, S = source, G = gate.
3.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4.
Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5.
All tolerances ± 0.127 [.005] unless specified otherwise.
6.
Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 11
Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
C66065-A2325-C001-01-0027
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Pins: D = drain, S = source, G = gate.
3.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4.
Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5.
All tolerances ± 0.127 [.005] unless specified otherwise.
6.
Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 02, 2009-04-01
PTFA192401E/F
Confidential, Limited Internal Distribution
Revision History:
2009-04-01
2008-10-06
Previous Version:
Data Sheet
Page
Subjects (major changes since last revision)
9, 10
Update package information
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-04-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 02, 2009-04-01