PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 Features -30 35 • Thermally-enhanced packages, Pb-free and RoHS compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = 47.0 dBm - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35 dBc - Adjacent channel power = –40 dBc • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 15.8 dB - Efficiency = 34% - Adjacent channel power = –33 dBc • Typical CW performance, 2140 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power 30 -35 ACPR Up 25 -40 ACPR Low -45 20 15 -50 -55 10 Efficiency Drain Efficiency (%) Adjacent Channel Power Ratio (dB) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW 5 -60 36 38 40 42 44 46 48 Average Output Power (dBm) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution RF Characteristics Two-Carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.8 15.8 — dB Drain Efficiency ηD 26 28 — % Intermodulation Distortion IMD — –35.0 –33 dBc Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ1 = 2140 MHz, ƒ2 = 2141 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.8 — dB Drain Efficiency ηD — 38.5 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.03 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 761 W 4.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W Average WCDMA) RθJC 0.23 °C/W Data Sheet 2 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description Shipping PTFA212401E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA212401F V4 H-37260-2 Thermally-enhanced earless flange, single-ended Tray Typical Performance (data taken in a production test fixture) Two-carrier WCDMA at Selected Biases Broadband Performance VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 30 V, IDQ = 1600 mA, POUT = 50 W 40 2.0 A 2.2 A 1.8 A -40 -45 1.4 A -50 1.6 A 34 36 38 40 42 44 35 46 -10 Return Loss 30 -15 25 -20 Efficiency 20 -25 15 10 2050 -55 -5 -30 Gain 2080 2110 2140 2170 Input Return Loss (dB) -35 Gain (dB), Efficiency (%) 3rd Order IMD (dBc) -30 -35 2200 Frequency (MHz) Output Power, PEP (dBm) *See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz 65 16 55 Gain 15 45 14 35 TCASE = 25°C 13 25 Efficiency TCASE = 90°C 12 0 40 80 120 160 200 15 240 Intermodulation Distortion (dBc) 17 Drain Efficiency (%) Gain (dB) VDD = 30 V IDQ = 1600 mA , ƒ = 2140 MHz, POUT = 53 dBm PEP -20 -25 3rd Order -30 -35 7th -40 -45 -50 5th -55 0 5 10 IDQ = 1600 mA, ƒ = 2140 MHz, tone spacing = 1 MHz, Output Power (PEP) = 53 dBm 50 30 -30 IM3 Up -40 20 Gain -50 10 30 Intermodulation Distortion (dBc) 40 40 Up Low -30 IM3 IM5 -40 -50 IM7 -60 10 32 100 1000 Output Power, PEP (W) Supply Voltage (V) Data Sheet 35 ƒ 1 = 2137.5 MHz, ƒ2 = 2142.5 MHz -20 Gain (dB), Drain Efficiency (%) 3rd Order IMD (dBc) -20 28 30 VDD = 30 V, IDQ = 1600 mA, Efficiency 26 25 Intermodulation Distortion Products vs. Output Power Voltage Sweep 24 20 Tone Spacing (MHz) Output Power (W) -10 15 4 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Output Peak-to-Average Ratio Compression (PARC) at various Power Levels Power Gain vs. Power Sweep (CW) over Temperature VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz, single-carrier WCDMA input PAR = 7.5 dB VDD = 30 V, IDQ = 1500 mA, ƒ = 2140 MHz 100 18 Power Gain (dB) 48 dBm 1 46 dBm 52 dBm 0.1 Input 51 dBm 0.01 25C 16 85C 15 14 13 50 dBm 0.001 12 1 2 3 4 5 6 7 8 1 10 Two-tone Drive-up Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 -25 50 45 Efficiency -35 40 IM3 -40 35 IM5 -45 30 -50 25 -55 20 IM7 -60 IM3 (dBc), ACPR (dBc) -30 15 -65 46 48 50 52 35 30 IM3 -35 25 -40 20 -45 15 ACPR -50 10 5 34 54 Output Power, PEP (dBm) Data Sheet Efficiency -30 -55 10 44 1000 Output Power (W) Drain Efficiency (%) Intermodulation Distortion (dBc) Peak-to-Average (dB) 100 Drain Efficiency (%) Probability (%) -15C 17 10 36 38 40 42 44 46 48 Output Power, avg. (dBm) 5 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.44 A 1.02 1.32 A 2.20 A 1.01 3.30 A 1.00 6.61 A 0.99 9.91 A 0.98 13.22 A 0.97 16.52 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) --> Broadband Circuit Impedance Z0 = 50 Ω GEN E RA T OR - 0.2 D Z Load A RD Z Source Z Load 0 .1 2200 M H z G R jX 2080 10.050 –4.250 1.140 2.07 2110 9.750 –4.320 1.080 2.38 2140 9.500 –4.380 1.090 2.65 2170 9.280 –4.350 1.130 2.89 2200 9.000 –4.460 1.450 3.11 Data Sheet 6 of 11 0.1 0.1 W jX <--- R 2080 M H z 2200 M H z AV MHz Z Source S NGT H E LE Z Load Ω D LOA D T OW AR Z Source Ω Frequency 0.0 S 0.2 2080 M H z 0.2 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Reference Circuit 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2K V R6 5.1K V R8 2K V C5 0.1µF C4 4.7µF 16V R5 2K V L1 VDD C6 8.2pF C13 8.2pF l8 l1 l2 C7 0.7pF C27 0.3pF DUT l3 l4 l5 l6 l7 C9 1.3pF C16 2.2µF l13 l10 l9 l12 l14 C29 0.5pF l15 C28 0.3pF C11 0.1µF C18 10µF 50V C31 0.7pF l 16 l 17 C30 0.5pF C32 0.7pF R7 5.1K V C10 4.7µF 16V C17 0.1µF C19 100µF 50V l11 C8 8.2pF J1 C15 1µF C14 1µF C33 8.2pF l18 l19 L2 C12 8.2pF C20 8.2pF C21 1µF C22 1µF C23 2.2µF C24 0.1µF C25 10µF 50V C26 100µF 50V Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTFA212401E or PTFA212401F PCB 0.76 mm [.030"] thick, εr = 3.5 LDMOS Transistor RF–35 1 oz. copper Microstrip Dimensions: L x W ( mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 (taper) l7, l8, l9 l10 l11, l12 l13 l14 l15 (taper) l16 (taper) l17 (taper) l18 l19 Data Sheet Electrical Characteristics at 2140 MHz 0.018 0.022 0.047 0.034 0.024 0.063 0.043 0.134 0.029 0.262 0.042 0.032 0.014 0.026 0.025 0.017 0.123 λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 42.8 Ω λ, 42.8 Ω / 6.9 Ω λ, 6.9 Ω λ, 59.9 Ω λ, 6.9 Ω λ, 51.0 Ω λ, 5.0 Ω λ, 5.0 Ω λ, 5.0 Ω / 6.65 Ω λ, 6.65 Ω / 11.68 Ω λ, 11.68 Ω / 40.7 Ω λ, 40.7 Ω λ, 49.9 Ω 1.55 x 1.70 1.91 x 1.70 3.99 x 1.70 2.90 x 1.70 2.01 x 2.16 5.28 x 2.16 / 20.32 3.33 x 20.32 11.48 x 1.04 2.21 x 20.32 22.10 x 1.65 3.18 x 28.91 2.41 x 28.91 1.04 x 28.91 / 21.89 2.03 x 21.89 / 11.43 2.13 x 11.43 / 2.34 1.40 x 2.34 10.24 x 1.70 7 of 11 0.061 0.075 0.157 0.114 0.079 0.208 0.131 0.452 0.087 0.870 0.125 0.095 0.041 0.080 0.084 0.055 0.403 x 0.067 x 0.067 x 0.067 x 0.067 x 0.085 x 0.085 / x 0.800 x 0.041 x 0.800 x 0.065 x 1.138 x 1.138 x 1.138 / x 0.862 / x 0.450 / x 0.092 x 0.067 0.800 0.862 0.450 0.092 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Reference Circuit (cont.) C14 C2 L1 C1 R3 QQ1 C5 R5 C4 C7 J1 C15 C16 C19 C3 R8 C13 Q1 R6 C6 R1 R2 C27 C29 C18 C17 C31 C9 C33 C8 C24 C32 C10 C11 C12 C30 C28 R7 J2 C23 C25 C22 C21 C26 L2 C20 Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4, C10 C5, C11, C17, C24 C6, C12 C7, C31, C32 C8, C33 C9 C13, C20 C14, C15, C21, C22 C16, C23 C18, C25 C19, C26 C27, C28 C29, C30 L1, L2 Q1 QQ1 R1 R2 R3, R5 R4 R6, R7 R8 Capacitor, 0.001 µF Capacitor, 4.7 µF, 16 V Capacitor, 0.1 µF Ceramic capacitor, 8.2 pF Capacitor, 0.7 pF Ceramic capacitor, 8.2 pF Capacitor, 1.3 pF Capacitor, 8.2 pF Ceramic capacitor, 1 µF Capacitor, 2.2 µF Tantalum capacitor, 10 µF, 50 V Electrolytic capacitor, 100 µF, 50 V Capacitor, 0.3 pF Capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Chip resistor 10 ohms Chip resistor 5.1 k-ohms Variable resistor 2 k-ohms Digi-Key Digi-Key Digi-Key ATC AVX ATC ATC AVX Digi-Key Digi-Key Garrett Electronics Digi-Key AVX AVX Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS3475CT-ND PCC104BCT-ND 100A 8R2 08051J0R7BBTTR 100B 8R2 600S1R3BT 100A 8R2 445-1411-1-ND 445-1447-2-ND TPSE106K050R0400 P5571-ND 08051J0R3BBTTR 08051J0R5BBTTR BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND P10ECT-ND P5.1KECT-ND 3224W-202ETR-ND Data Sheet 8 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36260-2 2X 12.70 [.500] 45° X 2.031 45° X [.080] 4.83±0.50 [.190±.020] CL D 4X R1.52 [R.060] S 23.37±0.51 [.920±.020] LID 13.21+0.10 -0.15 .520+.004 -.006 [ CL ] 13.72 [.540] 2X R1.63 [R.064] G C66065-A2324-C001-01-0027 27.94 [1.100] LID 22.35±0.23 [.880±.009] 1.02 [.040] 4.11±0.38 [.162±.015] 0.0381 [.0015] -ACL 34.04 [1.340] SPH 1.57 [.062] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Primary dimensions are mm. Alternate dimensions are inches. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Data Sheet 9 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37260-2 2X 12.70 [.500] 45° X 2.03 [45° X .080] 4.83±0.50 [.190±.020] D 23.37±0.51 [.920±.020] LID 13.21+0.10 -0.15 .520+.004 -.006 [ CL R0.508+0.381 -0.127 R.020+.015 -.005 [ ] 13.72 [.540] G ] C66065-A2325-C001-01-0027 CL LID 22.35±0.23 [.880±.009] 1.02 [.040] 4.11±0.38 [.162±.015] 0.0381 [.0015] -ACL S SPH 1.57 [.062] 23.11 [.910] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Primary dimensions are mm. Alternate dimensions are inches. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 04, 2009-10-05 PTFA212401E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-10-05 2009-04-01 Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 2 Updated characteristics We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-10-05 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 04, 2009-10-05