DICE SPECIFICATION RH1011 Voltage Comparator 3 2 1 DIE CROSS REFERENCE 8 LTC Finished Part Number Order DICE CANDIDATE Part Number Below RH1011 RH1011 RH1011 DICE RH1011 DWF Note: DWF = Dice in wafer form 4 PAD FUNCTION 5 6 7 Die Size: 80 × 48 mils Thickness: 12 mils Backside Metal: Gold W W W AXI U Ground +IN –IN V– 5. 6. 7. 8. Balance Balance/Strobe Output V+ Note: Backside (substrate) may be connected to V – or no connection U ABSOLUTE 1. 2. 3. 4. RATI GS (Note 1) Supply Voltage ....................................................... 36V Output to Negative Supply ...................................... 50V Ground to Negative Supply ..................................... 30V Differential Input Voltage ....................................... ±36V Voltage at STROBE Pad ............................................ 5V Input Voltage ..................................... Equal to Supplies Output Short-Circuit Duration ............................. 10 sec Junction Temperature .......................................... 150°C Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH1011 W DICE ELECTRICAL TEST LI ITS VS = ±15V, VCM = 0V, RS = 0Ω, TJ = 25°C, VGND = V– SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 2) RS ≤ 50k (Note 3) IOS Input Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain VS = ±15V, RL = 1k, –10V ≤ VOUT ≤ 14.5V VS = 5V, RL = 500Ω , 0.5V ≤ VOUT ≤ 4.5V CMRR Common Mode Rejection Ratio VOL MAX UNITS 1.5 2.0 mV mV (Note 3) 4 nA (Note 2) (Note 3) 50 65 nA nA Input Voltage Range VS = ±15V VS = Single 5V Output Saturation Voltage MIN 200 50 V/mV V/mV 90 dB –14.5 0.5 13 3 V V VIN– = 5mV, VGND = 0V, ISINK = 8mA ISINK = 50mA 0.4 1.5 V V Output Leakage Current VIN+ = 5mV, VGND = –15V VOUT = 20V 10 nA Positive Supply Current (Note 4) 4 mA Negative Supply Current (Note 4) 2.5 mA Strobe Current Minimum to Ensure Output Transistor Is Off (Notes 4, 5, 6) 500 µA Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Output is sinking 1.5mA with VOUT = 0V. Note 3: These specifications apply for all supply voltages from a single 5V to ±15V, the entire input voltage range and for both high and low output states. The high state is ISINK ≥ 100µA, VOUT ≥ (V + – 1V) and the low state is ISINK ≤ 8mA, VOUT ≤ 0.8V. Therefore, this specification defines a worst-case error band that includes effects due to common mode signals, voltage gain and output load. Note 4: VGND = 0V Note 5: Do not short the STROBE pad to ground. It should be current driven at 3mA to 5mA for the shortest strobe time. Currents as low as 500µA will strobe the RH1011 if speed is not important. External leakage on the STROBE pin in excess of 0.2µA when the strobe is “off” can cause offset voltage shifts. Note 6: Guaranteed by design, characterization or correlation to other tested parameters. Note 7: Please refer to LTC standard product data sheets for all other applicable information. Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-13-1011 2 Linear Technology Corporation LT/LT 0603 REV B • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2000