PD - 97471A
AUTOMOTIVE GRADE
AUIRF4104
AUIRF4104S
Features
O
O
O
O
O
O
O
O
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
D
V(BR)DSS
40V
RDS(on) typ.
max.
G
ID (Silicon Limited)
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
ID (Package Limited)
4.3mΩ
5.5mΩ
k
120A
75A
D2Pak
AUIRF4104S
TO-220AB
AUIRF4104
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Max.
120
84
75
470
140
c
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
g
c
Operating Junction and
Storage Temperature Range
g
A
W
0.95
± 20
W/°C
V
120
220
See Fig.12a, 12b, 15, 16
mJ
A
mJ
-55 to + 175
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
j
Thermal Resistance
d
Units
k
k
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Power Dissipation
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.05
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
–––
40
i
Junction-to-Ambient (PCB Mount)
RθJA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Note to are on page 3
1
3/29/10
AUIRF4104/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
Min. Typ. Max. Units
V
Conditions
Drain-to-Source Breakdown Voltage
40
–––
–––
VGS = 0V, ID = 250μA
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.032
4.3
–––
5.5
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0
63
–––
–––
4.0
–––
V
V
VDS = VGS, ID = 250μA
VDS = 10V, ID = 75A
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
250
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
200
-200
nA
VGS = 20V
VGS = -20V
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Total Gate Charge
–––
68
100
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
21
27
–––
–––
td(on)
tr
Turn-On Delay Time
Rise Time
–––
–––
16
130
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
38
77
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
ID = 75A
nC
ns
Internal Source Inductance
–––
7.5
VDD = 20V
ID = 75A
RG = 6.8 Ω
VGS = 10V
e
e
Between lead,
nH
LS
VDS = 32V
VGS = 10V
D
–––
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
3000
660
–––
–––
Crss
Coss
Reverse Transfer Capacitance
Output Capacitance
–––
–––
380
2160
–––
–––
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
–––
–––
560
850
–––
–––
pF
G
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
f
Diode Characteristics
Parameter
S
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
Continuous Source Current
–––
–––
75
ISM
(Body Diode)
Pulsed Source Current
–––
–––
470
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
23
6.8
35
10
ns
nC
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/μs
VSD
trr
Qrr
ton
2
c
Forward Turn-On Time
A
showing the
integral reverse
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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AUIRF4104/S
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
TO-220AB
2
D PAK
Machine Model
N/A
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H1C
AEC-Q101-001
Charged Device
Model
RoHS Compliant
Class C3
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
This value determined from sample failure population,
max. junction temperature. (See fig. 11).
starting TJ = 25°C, L = 0.04mH, RG = 25Ω, IAS = 75A, VGS =10V
Limited by TJmax, starting TJ = 25°C, L = 0.04mH This is applied to D2Pak, when mounted on 1" square PCB
RG = 25Ω, IAS = 75A, VGS =10V. Part not
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
recommended for use above this value.
Rθ is measured at TJ approximately 90°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
This is only applied to TO-220AB pakcage.
Coss eff. is a fixed capacitance that gives the
Calculated continuous current based on maximum allowable
same charging time as Coss while VDS is rising
junction temperature. Bond wire current limit is 75A. Note that
from 0 to 80% VDSS .
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.(Refer to AN-1140
http://www.irf.com/technical-info/appnotes/an-1140.pdf)
Repetitive rating; pulse width limited by
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3
AUIRF4104/S
1000
1000
VGS
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
TOP
10
4.5V
1
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
20μs PULSE WIDTH
Tj = 25°C
0.1
4.5V
10
0.1
1
10
100
0.1
10
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
T J = 25°C
T J = 175°C
100
10
VDS = 15V
20μs PULSE WIDTH
1
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
VDS, Drain-to-Source Voltage (V)
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
VDS, Drain-to-Source Voltage (V)
20μs PULSE WIDTH
Tj = 175°C
T J = 25°C
100
80
60
TJ = 175°C
40
20
VDS = 10V
380μs PULSE WIDTH
0
12
0
20
40
60
80
100
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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ance
AUIRF4104/S
5000
VGS, Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
3000
2000
Coss
1000
Crss
ID= 75A
VDS= 32V
VDS= 20V
16
12
8
4
0
0
1
10
0
100
40
1000.0
ID, Drain-to-Source Current (A)
10000
100.0
T J = 175°C
10.0
T J = 25°C
1.0
VGS = 0V
0.2
0.6
1.0
1.4
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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80
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
60
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
20
1000
100
100μsec
10
1
1.8
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF4104/S
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
120
LIMITED BY PACKAGE
ID , Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
ID = 75A
VGS = 10V
1.5
1.0
0.5
175
-60 -40 -20
T C , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.371
0.000272
0.337
0.001375
0.337
0.018713
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF4104/S
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
500
15V
TOP
BOTTOM
400
ID
11A
16A
75A
300
200
100
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
10 V
ID = 250μA
3.0
2.0
1.0
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
7
AUIRF4104/S
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
10
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
140
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
EAR , Avalanche Energy (mJ)
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF4104/S
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
VDS
V GS
RG
RD
D.U.T.
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF4104/S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF4104
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF4104/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUF4104S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF4104/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
TO-220AB package is not recommended for Surface Mount Application.
12
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AUIRF4104/S
Ordering Information
Base part number Package Type
AUIRF4104
AUIRF4104S
AUIRF4104S
AUIRF4104S
www.irf.com
TO-220
D2Pak
Standard Pack
Complete Part Number
Form
Quantity
Tube
50
AUIRF4104
Tube
50
AUIRF4104S
Tape and Reel Left
800
AUIRF4104STRL
Tape and Reel Right
800
AUIRF4104STRR
13
AUIRF4104/S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is
an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
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the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products
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IR products are neither designed nor intended for use in automotive applications or environments unless the
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including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
www.irf.com
AUIRF4104/S
Revision History
Date
2/5/2010
www.irf.com
Comments
Revised with new AU template:
1)Add sentence below Absolute Max Rating
2)Update ESD by using ESD data and table from Anika
3)Update Part Marking drawing
4) Add Order Info table
5) Add Revision History
15