IRF IRGPC30FD2

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PD - 9.1040
IRGPC30FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Fast CoPack IGBT
Features
C
VCES = 600V
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 2.1V
G
@VGE = 15V, IC = 17A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
31
17
120
120
12
120
± 20
100
42
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-109
To Order
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
1.2
2.5
—
40
—
Units
°C/W
g (oz)
Revision 1
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IRGPC30FD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, IC = 250µA
— 0.69 —
V/°C VGE = 0V, IC = 1.0mA
—
1.8 2.1
IC = 17A
VGE = 15V
—
2.4
—
V
IC = 31A
See Fig. 2, 5
—
2.2
—
IC = 17A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
6.1
10
—
S
VCE = 100V, IC = 17A
—
— 250
µA
VGE = 0V, VCE = 600V
—
— 2500
VGE = 0V, VCE = 600V, T J = 150°C
—
1.4 1.7
V
IC = 12A
See Fig. 13
—
1.3 1.6
IC = 12A, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
27
4.1
12
72
75
300
220
0.9
2.1
3.0
70
75
420
480
4.7
13
670
100
10
42
80
3.5
5.6
80
220
180
120
Max. Units
Conditions
30
IC = 17A
5.9
nC VCC = 400V
15
See Fig. 8
—
TJ = 25°C
—
ns
IC = 17A, VCC = 480V
450
VGE = 15V, RG = 23Ω
350
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ See Fig. 9, 10, 11, 18
4.6
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 17A, VCC = 480V
—
VGE = 15V, RG = 23Ω
—
Energy losses include "tail" and
—
mJ diode reverse recovery.
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
60
ns
TJ = 25°C See Fig.
120
TJ = 125°C
14
IF = 12A
6.0
A
TJ = 25°C See Fig.
10
TJ = 125°C
15
V R = 200V
180
nC TJ = 25°C See Fig.
600
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-110
To Order
Pulse width 5.0µs,
single shot.
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IRGPC30FD2
20
Du ty c ycle: 5 0 %
TJ = 1 2 5 °C
T s in k = 9 0 °C
Ga te d rive as sp e cified
Tu rn -on lo sses in clud e
effe cts o f re verse rec ove ry
Po we r D issipatio n = 2 4W
Load Current (A)
16
12
6 0 % o f ra te d
v o lta g e
8
4
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
10 00
IC , Collector-to-E m itter C urrent (A)
I C , C ollector-to-E mitter C urrent (A )
1000
TJ = 25 °C
100
TJ = 15 0°C
10
V G E = 1 5V
2 0µ s P U LS E W IDTH
1
1
1 00
T J = 15 0°C
10
T J = 25 °C
1
V C C = 1 00 V
5 µs P U L S E W ID TH
0.1
5
10
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C ollector-to-E m itter V oltage (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-111
To Order
20
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IRGPC30FD2
3.5
V G E = 15 V
V C E , C ollec to r-to -E m itter V oltage (V )
M axim um D C C ollector C urrent (A)
40
30
20
10
V G E = 15 V
8 0µ s P U LS E W IDTH
3.0
I C = 3 4A
2.5
I C = 1 7A
2.0
I C = 8.5 A
1.5
1.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
T C , C a s e Te m p e ra ture (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T he rm al R e sp ons e (Z thJ C )
10
1
D = 0 .5 0
0 .2 0
PD M
0 .1 0
0.1
t
0 .0 5
0 .0 2
0 .0 1
0.01
0.00001
1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.00 1
0.01
0.1
1
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-112
To Order
10
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IRGPC30FD2
1 4 00
20
1 2 00
V G E , G ate-to-E m itter V oltage (V)
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
1 0 00
C , C a pac itanc e (pF )
V C E = 40 0 V
I C = 1 7A
Cies
12
8 00
Coes
6 00
4 00
Cres
2 00
8
4
0
0
1
10
0
10 0
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
100
= 480V
= 15V
= 25°C
= 17A
3.06
3.02
2.98
A
2.94
0
10
20
30
40
50
15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
3.10
10
Q g , Total G ate C harge (nC )
RG = 23Ω
V GE = 15V
V CC = 480V
I C = 34A
10
I C = 17A
I C = 8.5A
1
0.1
-60
60
A
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-113
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IRGPC30FD2
1000
= 23Ω
= 150°C
= 480V
= 15V
I C , C o lle cto r-to -E m itte r C u rre n t (A )
RG
TC
V CC
V GE
9
6
3
0
10
20
30
VGGE E= 20 V
T J = 125 °C
100
S A FE O P E RA TIN G A RE A
10
A
0
1
40
1
IC , Collector-to-Emitter Current (A)
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
12
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-114
To Order
1000
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IRGPC30FD2
100
160
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
I F = 24A
I IRRM - (A)
t rr - (ns)
IF = 24A
I F = 12A
80
IF = 6.0A
I F = 12A
10
IF = 6.0A
40
0
100
1
100
1000
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
10000
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
Q RR - (nC)
400
I F = 24A
I F = 12A
200
1000
IF = 6.0A
IF = 12A
100
IF = 24A
IF = 6.0A
0
100
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
10
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-115
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IRGPC30FD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
Ic
90% Ic
10% Vce
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
t1
5% Vce
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
t3
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-116
To Order
Section D - page D-13