RH1028M/RH1128M Ultralow Noise Precision High Speed Op Amps Description Absolute Maximum Ratings The RH1028(gain of –1 stable)/RH1128(gain of +1 stable) achieve a new standard of excellence in noise performance with 0.9nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This ultralow noise is combined with excellent high speed specifications (gain-bandwidth product is 75MHz for RH1028, 20MHz for RH1128), distortion-free output, and true precision parameters (0.25µV/°C drift, 20µV offset voltage, 25 million voltage gain). Although the RH1028/RH1128 input stage operates at nearly 1mA of collector current to achieve low voltage noise, input bias current is only 50nA. Supply Voltage (–55°C to 125°C)............................±16V Differential Input Current (Note 9)........................±25mA Input Voltage...............................Equal to Supply Voltage Output Short-Circuit Duration........................... Indefinite Operating Temperature Range................ –55°C to 125°C Storage Temperature Range.................... –65°C to 150°C Lead Temperature (Soldering, 10 sec)................... 300°C (Note 1) L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. The RH1028/RH1128’s voltage noise is less than the noise of a 50Ω resistor. Therefore, even in very low source impedance transducer or audio amplifier applications, the RH1028/RH1128’s contribution to total system noise will be negligible. burn-in circuit PACKAGE INFORMATION TOP VIEW 10k 3 200Ω 4 – 16V NC 1 8 VOS TRIM 2 –IN 3 7 + 10k 9 VOS TRIM 8 V+ 7 OUT +IN 4 V– 5 5 –16V 10 NC – + 6 OVERCOMP W PACKAGE 10-LEAD CERPAC RH1028 BI Table 1: Electrical Characteristics (Preirradiation) VS = ±15V, VCM = 0V, unless otherwise noted. SYMBOL VOS ∆VOS ∆Time ∆VOS ∆Temp IOS IB en PARAMETER Input Offset Voltage Long-Term Input Offset Voltage Stability Average Input Offset Voltage Drift Input Offset Current Input Bias Current Input Noise Voltage Density CONDTIONS NOTES 2 3 MIN TA = 25°C SUBTYP MAX GROUP 20 80 1 0.3 8 VCM = 0V VCM = 0V fO = 10Hz fO = 1000Hz, 100% Tested 5 18 ±50 1.0 0.9 150 ±400 2.5 1.6 1 1 –55°C ≤ TA ≤ 125°C MIN TYP MAX 45 180 0.25 1.0 30 ±100 200 ±600 SUBGROUP 2, 3 UNITS µV µV/MO µV/°C 2, 3 2, 3 nA nA nV/√Hz nV/√Hz rh10281128fe For more information www.linear.com/RH1028M 1 RH1028M/RH1128M Table 1: Electrical Characteristics (Preirradiation) VS = ±15V, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER Input Noise Current In Density Input Resistance Common Mode Differential Mode Input Capacitance Input Voltage Range CMRR Common Mode Rejection Ratio PSRR Power Supply Rejection Ratio Large-Scale Voltage AVOL Gain VOUT SR GWB ZO IS 2 CONDTIONS fO = 10Hz fO = 1000Hz, 100% Tested VCM = ±11V VCM = ±10.3V VS = ±4V to ±18V VS = ±4.5V to ±16V RL ≥ 2k, VO = ±10V RL ≥ 1k, VO = ±10V RL ≥ 600Ω, VO = ±10V Maximum Output RL ≥ 2k Voltage Swing RL ≥ 600Ω Slew Rate AVCL = –1 (RH1028) AVCL = –1 (RH1128) Gain Bandwidth Product fO = 20kHz (RH1028) fO = 200kHz (RH1128) Open-Loop Output VO = 0, IO = 0 Impedance Supply Current NOTES 4, 6 7 7 MIN TA = 25°C SUBTYP MAX GROUP 4.7 24 1.0 3.6 ±11.0 110 300 20 5 ±12.2 126 1 110 132 1 5.0 3.5 2.0 ±12.0 ±10.5 11.0 4.5 50 11 25 20 15 ±13.0 ±12.2 15 6 75 20 80 7.6 –55°C ≤ TA ≤ 125°C MIN TYP MAX SUBGROUP 2, 3 MΩ kΩ pF V dB 2, 3 dB 5, 6 V/µV V/µV V/µV V V V/µs V/µs MHz MHz Ω ±10.3 ±11.7 100 120 4 104 2.0 1.5 130 14 10 4 ±10.3 ±11.6 5, 6 4 10.5 1 9 13 UNITS pA/√Hz pA/√Hz 2, 3 mA rh10281128fe For more information www.linear.com/RH1028M RH1028M/RH1128M Table 1A: Electrical Characteristics (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER Input Offset Voltage VOS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 2 100 120 140 160 180 µV CONDTIONS IOS Input Offset Current 200 200 200 300 500 nA IB Input Bias Current ±600 ±700 ±950 ±1100 ±1700 nA SR Slew Rate Input Voltage Range CMRR PSRR AVOL VOUT AVCL = –1 (RH1028) AVCL = –1 (RH1128) 7.5 3.0 ±11 7.5 3.0 ±11 7.5 3.0 ±11 7.5 3.0 ±11 7.5 3.0 ±11 V/µs V/µs V Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain VCM = ±11V 106 106 106 106 106 dB VS = ±4V to ±18V 104 104 104 104 104 dB 2 2 2 2 2 Maximum Output Voltage Swing RL ≥ 2k RL ≥ 600Ω ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 RL ≥ 2k, VO = ±10V Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. In addition, at TA = 25°C, offset voltage is measured with the chip heated to approximately 55°C to account for the chip temperature rise when the device is fully warmed up. Note 3: Long-term input offset voltage stability refers to the average trend line of Offset Voltage vs Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV. Note 4: This parameter is tested on a sample basis only. V/µV V V Note 5: 10Hz noise voltage density is sample tested on every lot. Devices 100% tested at 10Hz are available on request. Note 6: Current noise is defined and measured with balanced source resistors. The resultant voltage noise (after subtracting the resistor noise on an RMS basis) is divided by the sum of the two source resistors to obtain current noise. Maximum 10Hz current noise can be inferred from 100% testing at 1kHz. Note 7: Gain-bandwidth product is not tested. It is guaranteed by design and by inference from the slew rate measurement. Note 8: This parameter is not 100% tested. Note 9: The inputs are protected by back-to-back diodes. Current-limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±1.8V, the input current should be limited to 25mA. rh10281128fe For more information www.linear.com/RH1028M 3 RH1028M/RH1128M Table 2: Electrical Test Requirements MIL-STD-883 TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4 Group A Test Requirements (Method 5005) 1,2,3,4 Group B** and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) 1,2,3,4 *PDA Applies to subgroup 1. See PDA Test Notes. **Post B5 and B6 25ºC Limits are as follows: SUBGROUP 1 SUBGROUP 2, 3 UNITS VOS ±240 ±340 µV IOS ±350 ±400 nA IB ±760 ±960 nA total dose bias circuit 10k 15V – 8V + 10k –15V RH1028 BIAS TYPICAL PERFORMANCE CHARACTERISTICS Noise Voltage Density 2.5 RH1028 Positive Slew Rate 20 TA = 25°C VS = ±15V 1.5 1.0 0.5 0 1 10 100 1000 14 10 RH1028 G01 16 14 12 1 10 100 1000 TOTAL DOSE KRAD (Si) TOTAL DOSE KRAD (Si) 4 16 12 1kHz TA = 25°C VS = ±15V VO = ±10V AVCL = –1 18 –SLEW RATE (V/µs) +SLEW RATE (V/µs) nV/√Hz 10Hz 20 TA = 25°C VS = ±15V VO = ±10V AVCL = –1 18 2.0 RH1028 Negative Slew Rate 10 1 10 100 1000 TOTAL DOSE KRAD (Si) RH1028 G02 RH1028 G03 rh10281128fe For more information www.linear.com/RH1028M RH1028M/RH1128M TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C VS = ±15V VOUT = ±10V AVCL = –1 8 7 6 8 7 6 5 5 4 1 10 100 TOTAL DOSE KRAD (Si) 4 1000 1 10 100 TOTAL DOSE KRAD (Si) 10 8 6 1 10 100 TOTAL DOSE KRAD (Si) 1000 Common Mode Rejection Ratio TA = 25°C VS = ±15V VCM = 0V TA = 25°C VS = ±15V VCM = ±11V 135 130 500 0 125 120 115 110 –500 105 10 100 TOTAL DOSE KRAD (Si) 1 1000 –1000 1 10 100 TOTAL DOSE KRAD (Si) –300 1 12 10 100 1000 140 10 135 9 TOTAL DOSE KRAD (Si) RH1028 G10 130 8 125 7 120 6 115 5 110 1 10 100 TOTAL DOSE KRAD (Si) 1000 TA = 25°C 11 VS = ±15V VOUT = 0V IS (mA) PSRR (dB) –100 10 100 TOTAL DOSE KRAD (Si) Supply Current 150 TA = 25°C 145 VS = ±4V TO ±18V 100 1 RH1028 G09 Power Supply Rejection Ratio TA = 25°C VS = ±15V VCM = 0V 300 100 1000 RH1028 G08 Input Offset Current 500 INPUT OFFSET CURRENT (nA) –10 140 RH1028 G07 –500 –5 RH1028 G06 4 2 0 –20 1000 CMRR (dB) INPUT BIAS CURRENT (nA) 12 5 Input Bias Current 1000 TA = 25°C VS = ±15V RL = 2k VOUT = ±10V 14 10 RH1028 G05 Open-Loop Gain 16 TA = 25°C 15 VS = ±15V VCM = 0V –15 RH1028 G04 OPEN-LOOP GAIN (V/µV) Input Offset Voltage 20 TA = 25°C VS = ±15V VOUT = ±10V AVCL = –1 9 –SLEW RATE (V/µs) 9 +SLEW RATE (V/µs) RH1128 Negative Slew Rate 10 INPUT OFFSET VOLTAGE (µV) RH1128 Positive Slew Rate 10 1000 4 1 RH1028 G11 10 100 TOTAL DOSE KRAD (Si) 1000 RH1028 G12 rh10281128fe Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its information circuits as described herein will not infringe on existing patent rights. For more www.linear.com/RH1028M 5 RH1028M/RH1128M Revision History (Revision history begins at Rev E) REV DATE DESCRIPTION E 04/15 Update postirradiation 20/500/100/200k Rad Input Bias Current Specification 6 PAGE NUMBER 2 rh10281128fe Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 For more information www.linear.com/RH1028M (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com/RH1028M I.D. No. 66-10-1028 0807 LT 0415 REV E • PRINTED IN USA LINEAR TECHNOLOGY CORPORATION 2008