RH1078M Micropower, Dual, Single Supply Precision Op Amp DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ±15V are also provided. Supply Voltage........................................................ ±22V Differential Input Voltage ....................................... ±30V Input Voltage................. Equal to Positive Supply Voltage 0.5V Below Negative Supply Voltage Output Short-Circuit Duration.......................... Indefinite Operating Temperature Range .............. –55°C to 125°C Storage Temperature Range.................. –55°C to 150°C Lead Temperature (Soldering, 10 sec)................... 300°C The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. PACKAGE/ORDER INFORMATION TOP VIEW OUT A 1 TOP VIEW V+ TOP VIEW 8 V+ OUT A 1 –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B 8 7 OUT B 6 –IN B –IN A 2 +IN A 3 4 5 +IN B 1 10 –IN A 2 9 OUT B +IN A 3 8 –IN B NC 4 7 +IN B V– 5 6 NC V– J8 PACKAGE 8-LEAD CERAMIC DIP W PACKAGE 10-LEAD CERPAC H PACKAGE 8-LEAD TO-5 METAL CAN BURN-IN CIRCUIT TOTAL DOSE BIAS CIRCUIT (Each Amplifier) 10k 50k 15V 20V – – 100Ω 50k V+ OUT A + 8V 10k + –15V –20V Note: For ordering information contact LTC. rh1078mff 1 RH1078M TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V, VCM = 0.1V, VOUT = 1.4V unless otherwise specified. SYMBOL PARAMETER VOS Input Offset Voltage ∆VOS ∆Temp Average Tempco of Offset Voltage ∆VOS ∆Time Long-Term VOS Stability IOS Input Offset Current IB Input Bias Current en Input Noise Voltage in CONDITIONS TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUBTYP MAX GROUP MIN TYP MAX GROUP 120 4 0.1Hz to 10Hz UNITS µV µV/°C µV/Month 0.8 1 1.5 2, 3 15 1 18 2, 3 nA nA 1 0.5 µVP-P Input Noise Voltage Density fO = 10Hz fO = 1kHz 1 1 25 24 nV/√Hz nV/√Hz Input Noise Current 1 2.6 1 1 0.07 0.025 0.1Hz to 10Hz pAP-P pA/√Hz pA/√Hz Input Resistance Differential 2 600 MΩ Common Mode 2 5 GΩ Input Voltage Range 2 2 3.5 0 1 1 Common Mode Rejection Ratio VCM = 0V to 3.5V VCM = 0.05V to 3.2V 94 1 PSRR Power Supply Rejection Ratio VS = 2.3V to 12V VS = 3.1V to 12V 100 1 AVOL Large-Signal Voltage Gain VO = 0.03V to 4V, No Load VO = 0.03V to 3.5V, RL = 50k VO = 0.05V to 4V, No Load VO = 0.05V to 3.5V, RL = 50k 150 120 1 1 SR 2, 3 0.5 CMRR VOUT 370 0.5 Input Noise Current Density fO = 10Hz fO = 1kHz RIN NOTES MIN Output Voltage Swing Slew Rate Output Low, No Load Output Low, 2k to GND Output Low, ISINK = 100µA Output High, No Load Output High, 2k to GND 4.2 3.5 AV = 1, VS = ±2.5V 0.04 GBW Gain-Bandwidth Product fO ≤ 20kHz IS Supply Current per Amplifier Channel Separation ∆VIN = 3V, RL = 10k Minimum Supply Voltage 6 2 130 4 4 4 4 4 3.20 0.05 2, 3 2, 3 V V 88 2, 3 dB dB 94 2, 3 dB dB 2, 3 2, 3 V/mV V/mV V/mV V/mV 80 60 3.9 3.0 8 5, 6 170 5, 6 5, 6 5, 6 4 V/µs 200 kHz 75 130 3 mV mV mV V V 1 95 2, 3 µA dB 2.3 V rh1078mff 2 RH1078M TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = ±15V unless otherwise specified. CONDITIONS NOTES MIN TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUBTYP MAX GROUP MIN TYP MAX GROUP SYMBOL PARAMETER VOS Input Offset Voltage ∆VOS ∆Temp Average Tempco of Offset Voltage IOS Input Offset Current 0.8 IB Input Bias Current 15 350 4 1 13.5 –15.0 1 1 CMRR Common Mode Rejection Ratio VCM = 13.5V, –15V VCM = 13V, –14.9V 97 1 PSRR Power Supply Rejection Ratio VS = 5V, 0V to ±18V 100 1 AVOL Large-Signal Voltage Gain VO = ±10V, RL = 50k VO = ±10V, RL = 2k VO = ±10V, RL = 5k 1000 300 1 1 RL = 50k RL = 2k RL = 5k ±13 ±11 4 4 Output Voltage Swing SR Slew Rate IS Supply Current 2, 3 0.6 Input Voltage Range VOUT 600 0.06 per Amplifier Note 1: All noise parameters are for VS = ±2.5V, VO = 0V. Note 2: This parameter is guaranteed by design, characterization or correlation to other tested parameters. 1 µV µV/°C 1.5 2, 3 nA 18 2, 3 nA V V 90 2, 3 dB dB 94 2, 3 dB 2, 3 V/mV V/mV V/mV 5, 6 V V V 150 ±11 4 100 UNITS V/µs 125 2, 3 µA Note 3: Power supply rejection ratio is measured at the minimum supply voltage. The op amps actually work at 1.8V supply but with a typical offset skew of –300µV. rh1078mff 3 RH1078M TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V, 0V, VCM = 0.1V, VOUT = 1.4V, TA = 25°C, unless otherwise specified. 10KRAD(Si) MIN MAX 25KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX 75KRAD(Si) MIN MAX Input Offset Voltage 120 175 250 500 µV Input Offset Current 2 8 13 18 nA 100 nA SYMBOL PARAMETER VOS IOS IB CONDITIONS Input Bias Current 20 Input Voltage Range 40 80 100KRAD(Si) MIN MAX UNITS 3.5 3.5 3.5 3.5 V CMRR Common Mode Rejection Ratio VCM = 0V to 3.5V 91 89 87 85 dB PSRR Power Supply Rejection Ratio VS = 2.3V to 12V 100 100 98 88 dB AVOL Large-Signal Voltage Gain VO = 0.03V to 4V, No Load VO = 0.03V to 3.5V, RL = 50k 150 120 150 50 100 20 50 10 V/mV V/mV VOUT Output Voltage Swing Output Low, No Load Output Low, 2k to GND Output Low, ISINK = 100µA Output High, No Load Output High, 2k to GND 4.2 3.5 SR Slew Rate AV = 1, VS = ±2.5V 0.04 IS Supply Current per Amplifier 6 2 130 4.2 3.5 9 2 140 0.03 75 4.2 3.5 13 2 150 0.02 75 4.2 3.5 20 2 160 0.01 75 mV mV mV V V V/µs 75 µA rh1078mff 4 RH1078M TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V unless otherwise specified. 10KRAD(Si) MIN MAX 25KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX 75KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX Input Offset Voltage 350 500 650 800 1000 µV Input Offset Current 2 8 13 18 23 nA 120 nA SYMBOL PARAMETER VOS IOS IB CONDITIONS Input Bias Current 20 Input Voltage Range 40 80 100 UNITS 13.5 –15.0 13.5 –15.0 13.5 –15.0 13.5 –15.0 13.5 –15.0 V V CMRR Common Mode Rejection Ratio VCM = 13.5V, –15V 94 92 90 88 86 dB PSRR Power Supply Rejection Ratio VS = 5V, 0V to ±18V 100 100 98 88 78 dB AVOL Large-Signal Voltage Gain VO = 10V, RL = 50k VO = 10V, RL = 2k 1000 300 700 200 400 120 150 45 50 15 V/mV V/mV VOUT Output Voltage Swing RL = 50k RL = 2k ±13 ±11 ±13 ±11 ±13 ±11 ±13 ±11 ±13 ±10 V V SR Slew Rate 0.05 0.04 0.03 0.02 0.01 V/µs IS Supply Current per Amplifier 100 100 100 100 100 µA rh1078mff 5 RH1078M TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group C and D End Point Electrical Parameters (Method 5005) 1,2,3 *PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TYPICAL APPLICATIONS Input Offset Voltage Input Offset Current Input Bias Current 750 15 –20 500 250 0 –250 –500 –750 –1000 INPUT BIAS CURRENT (nA) 0 INPUT OFFSET CURRENT (nA) 20 INPUT OFFSET VOLTAGE (µV) 1000 10 5 0 –5 –10 10 100 TOTAL DOSE-KRADs (Si) –20 1000 1 10 100 TOTAL DOSE-KRADs (Si) 1078M • G1 –120 –160 1000 110 100 1000 1078M • G4 1 10 100 TOTAL DOSE-KRADs (Si) Large-Signal Voltage Gain 140 150 130 140 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G3 LARGE-SIGNAL VOLTAGE GAIN (dB) POWER SUPPLY REJECTION RATIO (dB) COMMON MODE REJECTION RATIO (dB) 120 10 100 TOTAL DOSE-KRADs (Si) –100 Power Supply Rejection Ratio 130 1 –80 1078M • G2 Common Mode Rejection Ratio 90 –60 –140 –15 1 –40 1000 1078M • G5 VS = ±15V VO = ±10V RL = 2k 130 120 110 VS = 5V, 0V VO = 0.03V TO 3.5V RL = 50k 100 90 80 70 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G6 rh1078mff 6 RH1078M TYPICAL APPLICATIONS Slew Rate Gain-Bandwidth Product 0.14 350 SLEW RATE (V/µs) 0.12 VS = ±15V 0.10 0.08 VS = 5V, 0V 0.06 0.04 0.02 0 1 10 100 TOTAL DOSE-KRADs (Si) 10Hz Noise Density 160 VS = ±15V 300 250 200 150 100 0 10 100 TOTAL DOSE-KRADs (Si) 1 0 RL = 2k 10 8 6 4 2 1 10 100 TOTAL DOSE-KRADs (Si) 1000 26 –2 –4 –6 –8 –10 –12 RL = 2k –14 –16 RL = 50k 10 100 TOTAL DOSE-KRADs (Si) 1 160 VS = 5V, 0V 1.0 0.8 0.6 0.4 0.2 1 10 100 TOTAL DOSE-KRADs (Si) 18 16 12 8 4 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G12 Output Voltage Swing Low, ISINK = 100mA 1.2 0 1000 20 1078M • G11 Output Voltage Swing Low, 2k to GND 1.4 10 100 TOTAL DOSE-KRADs (Si) VS = 5V, 0V 24 0 1000 1078M • G10 1.6 1 Output Voltage Swing Low, No Load VS = ±15V OUTPUT VOLTAGE SWING (mV) 0 40 1078M • G9 OUTPUT VOLTAGE SWING (mV) NEGATIVE OUTPUT VOLTAGE SWING (V) 12 60 Negative Output Voltage Swing RL = 50k OUTPUT VOLTAGE SWING (mV) POSITIVE OUTPUT VOLTAGE SWING (V) 14 80 1078M • G8 Positive Output Voltage Swing VS = ±15V 100 0 1000 1078M • G7 16 120 20 50 1000 VS = ±15V 140 10Hz NOISE DENSITY (nV/√Hz) 400 GAIN-BANDWIDTH PRODUCT (kHz) 0.16 1000 1078M • G13 VS = 5V, 0V 140 120 100 80 60 40 20 0 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G14 rh1078mff 7 RH1078M TYPICAL APPLICATIONS Output Voltage Swing High VS = 5V, 0V OUTPUT VOLTAGE SWING (V) 4.4 Supply Current 80 NO LOAD SUPPLY CURRENT PER AMPLIFIER (µA) 4.6 4.2 4.0 2k TO GND 3.8 3.6 3.4 3.2 3.0 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G15 70 60 50 VS = ±15V 40 VS = 5V, 0V 30 20 10 0 1 10 100 TOTAL DOSE-KRADs (Si) 1000 1078M • G16 REVISION HISTORY REV DATE DESCRIPTION F 05/10 Added J8 and W Packages PAGE NUMBER 1 rh1078mff 8 Linear Technology Corporation I.D. No. 66-10-0100 • LT 0510 REV F • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 1994