RH27 Precision Operational Amplifier DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH27 combines very low noise with excellent precision and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH27 an excellent choice for low frequency military instrumentation applications. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. Supply Voltage ...................................................... ±22V Internal Power Dissipation ................................. 500mW Input Voltage............................. Equal to Supply Voltage Output Short-Circuit Duration ......................... Indefinite Differential Input Current (Note 8) ...................... ±25mA Operating Temperature Range............... –55°C to 125°C Junction Temperature Range ................ –55°C to 150°C Storage Temperature Range.................. –65°C to 150°C Lead Temperature (Soldering, 10 sec) ................. 300°C For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. BURN-IN CIRCUIT 10k 20V 20V 2 – 7 6 200Ω 3 + 4 10k 2 – 3 + 7 8 OR 4 –20V –20V PACKAGE INFORMATION TOP VIEW VOS TRIM 8 VOS TRIM 1 2 –IN +IN 7 VOS TRIM 1 V+ – –IN 2 6 + 5 3 TOP VIEW TOP VIEW OUT NC 4 V– (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN ORDER PART NUMBER RH27EH RH27CH +IN 3 8 – + V– 4 7 VOS TRIM V + 6 OUT 5 NC J8 PACKAGE 8-LEAD CERDIP ORDER PART NUMBER RH27CJ8 10 NC NC 1 VOS TRIM 2 – 9 VOS TRIM –IN 3 + 8 V+ +IN 4 7 OUT V– 5 6 NC W PACKAGE 10-LEAD CERPAC ORDER PART NUMBER RH27AEW (Note 11) RH27EW RH27CW rh27fd 1 RH27 TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) SYMBOL PARAMETER CONDITIONS NOTES MIN TA = 25°C SUBTYP MAX GROUP RH27AE RH27E RH27C 11 1 1 ΔVOS ΔTemp Average Offset Drift RH27E RH27C 4, 7 4, 7 ΔVOS ΔTime Long-Term Input RH27E Offset Voltage Stability RH27C 2, 4 2, 4 IOS Input Offset Current RH27E RH27C 35 75 1 1 50 135 2, 3 2, 3 nA nA IB Input Bias Current RH27E RH27C ±40 ±80 1 1 ±60 ±150 2, 3 2, 3 nA nA en Input Noise Voltage 0.1Hz to 10Hz (RH27E) 0.1Hz to 10Hz (RH27C) Input Noise Voltage Density fO = 10Hz (RH27E) fO = 30Hz (RH27E) fO = 1000Hz (RH27E) fO = 10Hz (RH27C) fO = 30Hz (RH27C) fO = 1000Hz (RH27C) Input Noise Current Density fO = 1000Hz Input Resistance Common Mode RH27E RH27C Input Voltage Range RH27E RH27C Common Mode Rejection Ratio VCM = ±11V (RH27E) VCM = ±10V (RH27E) VCM = ±11V (RH27C) VCM = ±10V (RH27C) 114 100 1 VS = ±4V to ±18V (RH27E) VS = ±4.5V to ±18V (RH27E) VS = ±4V to ±18V (RH27C) VS = ±4.5V to ±18V (RH27C) 100 1 94 1 RL ≥ 2kΩ, VO = ±10V (RH27E) RL ≥ 600Ω, VO = ±1V (RH27E) VS = ±4V 4 4 1000 250 RL ≥ 2kΩ, VO = ±10V (RH27C) RL ≥ 600Ω, VO = ±1V (RH27C) VS = ±4V 700 200 4 4 ±12 ±10 ±11.5 ±10 4 4 4 4 1.7 7 PSRR AVOL VOUT Power Supply Rejection Ratio Large-Signal Voltage Gain Maximum Output Voltage Swing Slew Rate RL ≥ 2kΩ GBW Gain-Bandwidth Product fO = 100kHz ZO Open-Loop Output Resistance VO = 0, IO = 0 PD Power Dissipation RH27E RH27C 2, 3 2, 3 2, 3 1 1.8 μV μV μV μV/°C μV/°C 1 2 μV/ Month 4, 5 4, 5 0.18 0.25 μVP-P μVP-P 3 4 4 3 4 4 5.5 4.5 3.8 8 5.6 4.5 nV/√Hz nV/√Hz nV/√Hz nV/√Hz nV/√Hz nV/√Hz 4, 6 0.6 pA/√Hz 3 2 4 4 RL ≥ 2kΩ (RH27E) RL ≥ 600Ω (RH27E) RL ≥ 2kΩ (RH27C) RL ≥ 600Ω (RH27C) SR 60 100 300 UNITS Input Offset Voltage CMRR 4 4 4 SUBGROUP VOS in 35 55 100 –55°C ≤ TA ≤ 125°C MIN TYP MAX 4 GΩ GΩ ±11 ±11 ±10.3 ±10.2 V V 1 5 dB dB dB dB 108 2, 3 94 2, 3 96 2, 3 86 2, 3 600 5, 6 V/mV V/mV 300 5, 6 V/mV V/mV ±11.5 5, 6 ±10.5 5, 6 V V V V dB dB dB dB V/μs MHz 70 Ω 140 170 1 1 mW mW rh27fd 2 RH27 TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage RH27E RH27C IOS IB 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 55 100 80 130 100 180 150 280 200 400 μV μV Input Offset Current RH27E RH27C 35 75 40 75 50 90 60 120 90 180 nA nA Input Bias Current RH27E RH27C ±40 ±80 ±50 ±80 ±80 ±125 ±100 ±200 ±200 ±400 nA nA Input Resistance Common Mode RH27E RH27C Input Voltage Range 1 1 3 (Typ) 2 (Typ) 4 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) GΩ GΩ ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection Ratio VCM = ±11V (RH27E) VCM = ±11V (RH27C) 114 100 114 100 110 97 105 94 100 90 dB dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V (RH27E) VS = ±4V to ±18V (RH27C) 100 94 100 94 98 92 96 90 94 86 dB dB AVOL Large-Signal Voltage Gain RL ≥ 2kΩ, VO = ±10V (RH27E) RL ≥ 2kΩ, VO = ±10V (RH27C) 1000 700 1000 700 1000 700 900 700 800 400 V/mV V/mV VOUT Maximum Output Voltage Swing RL ≥ 2kΩ (RH27E) RL ≥ 600Ω (RH27E) RL ≥ 2kΩ (RH27C) RL ≥ 600Ω (RH27C) ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ZO Open-Loop Output Resistance VO = 0, IO = 0 PD Power Dissipation RH27E RH27C Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5μV. Refer to the typical performance curve. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. 70 (Typ) 140 170 70 (Typ) 140 170 70 (Typ) 140 170 70 (Typ) 140 170 V V V V 70 (Typ) 140 170 Ω mW mW Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8kΩ to 20kΩ. Note 8: The RH27’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V, the input current should be limited to 25mA. Note 9: VS = ±15V, VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. Note 11: RH27AEW is marked and processed as RH27EW. Orders will be delivered through box stock screening at 25°C, –55°C to 125°C to the VOS specification shown on Table 1. rh27fd 3 RH27 TOTAL DOSE BIAS CIRCUIT 10k 15V –1μF – 10k 8V + –15V –1μF TYPICAL PERFORMANCE CHARACTERISTICS Positive Slew Rate Negative Slew Rate 4 4 VS = 15V RL = 2k NEGATIVE SLEW RATE (V/μs) POSITIVE SLEW RATE (V/μs) VS = 15V RL = 2k 3 2 1 0 3 2 1 0 1 100 10 TOTAL DOSE KRAD (Si) 1000 RH27 G01 1 100 10 TOTAL DOSE KRAD (Si) 1000 RH27 G02 rh27fd 4 RH27 TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage Open-Loop Gain 150 VS = ±15V RL = 2k VOUT = ±10V 160 OPEN-LOOP GAIN (dB) 50 0 –50 –100 –150 150 140 130 120 110 –200 1 10 1 10 100 TOTAL DOSE KRAD (Si) RH27 G03 Common Mode Rejection Ratio INPUT OFFSET CURRENT (nA) 150 140 130 120 110 100 100 TOTAL DOSE KRAD (Si) 100 1 1000 RH27 G06 10 100 TOTAL DOSE KRAD (Si) Power Supply Rejection Ratio 140 50 25 0 –25 –50 1000 RH27 G05 Input Offset Current VS = ±15V VCM = 0V 10 150 0 1000 75 VS = ±15V VCM = ±11V 1 200 RH27 G04 170 160 250 50 100 1000 100 TOTAL DOSE KRAD (Si) VS = ±15V VCM = 0V 300 POWER SUPPLY REJECTION RATIO (dB) INPUT OFFSET VOLTAGE (μV) 350 INPUT BIAS CURRENT (nA) VS = ±15V VCM = 0V 100 COMMON MODE REJECTION RATIO (dB) Input Bias Current 170 VS = ±4V TO ±18V 130 120 110 100 90 80 70 1 100 10 TOTAL DOSE KRAD (Si) 1000 1 RH27 G07 10 100 TOTAL DOSE KRAD (Si) 1000 RH27 G08 rh27fd Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 5 RH27 TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6,7 Group A Test Requirements (Method 5005) 1,2,3,4,5,6,7 Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) 1 *PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. I.D. No. 66-10-0155 Rev. D 1008 rh27fd 6 Linear Technology Corporation LT 1008 REV D • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1993