PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U ® HEXFET TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 400Volt, 3.6Ω Product Summary The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. Part Number IRFE310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A Features: n n n n n n Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Surface Temperature Weight www.irf.com IRFE310, JANTX-, JANTXV-, 2N6786U Units 1.25 A 0.80 5.5 15 W 0.12 W/°C ±20 V 34 mJ 2.8 V/ns -55 to 150 o C 300 ( for 5 seconds) 0.42 (typical) g 1 10/9/98 IRFE310, JANTX-, JANTXV-, 2N6786U Devices Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 400 — — V VGS = 0V, ID = 1.0mA — 0.37 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 0.87 — — — — — — — — 3.6 3.7 4.0 — 25 250 V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 5.0 100 -100 8.4 1.6 5.0 15 20 35 30 — LS Internal Source Inductance — 15 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 190 65 24 — — — nA nC ns nH VGS = 10V, ID = 0.8A VGS = 10V, ID = 1.25A VDS = VGS, ID = 250µA VDS > 15V, IDS = 0.8A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V, ID = 1.25A VDS = Max Rating x 0.5 VDD = 15V, ID = 1.25A, RG = 7.5Ω Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 1.25 5.5 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.4 540 4.5 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 1.25A, VGS = 0V Tj = 25°C, IF = 1.25A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB 2 Junction-to-Case Junction-to-PC board Min Typ Max Units — — — — 8.3 27 °C/W Test Conditions soldered to a copper-clad PC board www.irf.com IRFE310, JANTX-, JANTXV-, 2N6786U Devices 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 1 4.5V 0.1 0.01 0.1 VDS , Drain-to-Source Voltage (V) 3.0 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 5.0 10 100 Fig 2. Typical Output Characteristics 10 0.1 4.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TJ = 150 °C ID = 1.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFE310, JANTX-, JANTXV-, 2N6786U Devices VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 400 Ciss 300 Coss 200 Crss 100 20 VGS , Gate-to-Source Voltage (V) 500 0 1 10 ID = 1.25 A VDS = 320V VDS = 200V VDS = 80V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 2 VDS , Drain-to-Source Voltage (V) 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C 1 4 V GS = 0 V 0.6 0.8 1.0 10us 100us 1 1ms 10ms 0.1 TJ = 25 ° C 0.1 0.4 10 1.2 0.01 1.4 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFE310, JANTX-, JANTXV-, 2N6786U Devices 1.25 RD V DS VGS 1.00 D.U.T. I D , Drain Current (A) RG + -V DD 0.75 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.50 Fig 10a. Switching Time Test Circuit 0.25 VDS 90% 0.00 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 P DM 0.05 t1 0.02 0.01 0.1 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFE310, JANTX-, JANTXV-, 2N6786U Devices 15V L VDS D .U .T RG IA S 10V 20V D R IV E R + V - DD 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 75 ID 0.56A 0.79A BOTTOM 1.25A TOP 60 45 30 15 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10V 12V .2µF .3µF 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFE310, JANTX-, JANTXV-, 2N6786U Devices Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50 V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) ] Peak IL =1.25A, VGS =10 V, 25 ≤ RG ≤ 200Ω ISD ≤ 1.25A, di/dt ≤ 180 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 50Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package IR Case Style Leadless Chip Carrier (LCC) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98 www.irf.com 7