PD - 94433 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF7NJZ44V 60V, N-CHANNEL Product Summary Part Number BVDSS IRF7NJZ44V 60V RDS(on) 0.0165Ω ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range 22* 22* 88 50 0.4 ±20 66 22 5.0 2.2 -55 to 150 Package Mounting Surface Temp. Weight 300 (for 5s) 1.0 (Typical) A W W/°C V mJ A mJ V/ns o C g * Current is limited by package and internal wires For footnotes refer to the last page www.irf.com 1 04/24/02 IRF7NJZ44V Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 60 — — V VGS = 0V, ID = 250µA — 0.056 — V/°C Reference to 25°C, ID = 1.0mA — — 0.0165 Ω 2.0 24 — — — — — — 4.0 — 25 250 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 67 18 25 20 120 60 90 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1723 370 70 — — — VGS = 10V, ID = 22A ➃ Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDS = VGS, ID = 250µA VDS =15V, IDS = 22A ➃ VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 22A VDS = 48V VDD = 30V, ID = 22A, VGS = 10V, RG = 7.5Ω ns nH Measured from the center of drain pad to the center of source pad l VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 22* 88 1.5 105 250 Test Conditions A V ns nC Tj = 25°C, IS = 22A, VGS = 0V ➃ Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package and internal wires Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 2.5 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7NJZ44V 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 10 4.5V 1 20µs PULSE WIDTH T = 25 C 1 10 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α ) T J = 150°C T J = 25°C 10 VDS = 25V 15 20µs PULSE WIDTH 1 5.5 6.0 6.5 7.0 7.5 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5.0 ° J 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4.5 20µs PULSE WIDTH T = 150 C 1 0.1 VDS , Drain-to-Source Voltage (V) 4.0 4.5V 10 ° J 0.1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 22A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7NJZ44V VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2000 1500 1000 500 0 ID = 22A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 10 100 0 20 VDS , Drain-to-Source Voltage (V) 40 60 80 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.6 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 0.1 0.4 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 48V VDS = 30V VDS = 12V 0 1 ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 20 VGS , Gate-to-Source Voltage (V) 3000 1.4 100µs 10 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7NJZ44V 40 RD V DS LIMITED BY PACKAGE I D , Drain Current (A) VGS D.U.T. 30 RG 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % + -V DD VGS Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7NJZ44V 1 5V D R IV E R L VD S D .U .T. RG + V - DD IA S VGS 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 120 TOP 100 BOTTOM ID 10A 14A 22A 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7NJZ44V Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 22A, di/dt ≤ 278A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.27mH Peak IAS = 22A, VGS = 10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 22V, TJ ≤ 150°C Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 www.irf.com 7