IRF IRGP35B60PD-EP

PD - 96169
SMPS IGBT
IRGP35B60PD-EP
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
C
Applications
•
•
•
•
•
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
Features
•
•
•
•
•
•
•
Equivalent MOSFET
Parameters
RCE(on) typ. = 84mΩ
ID (FET equivalent) = 35A
G
E
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
n-channel
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
TO-247AD
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
60
IC @ TC = 100°C
Continuous Collector Current
34
ICM
120
ILM
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
40
IF @ TC = 100°C
IFRM
Diode Continous Forward Current
Maximum Repetitive Forward Current
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
308
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
d
120
A
15
e
60
123
-55 to +150
Soldering Temperature for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.41
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
1.7
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
40
Weight
–––
6.0 (0.21)
–––
g (oz)
08/06/08
1
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IRGP35B60PD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
600
—
Temperature Coeff. of Breakdown Voltage
—
0.78
—
Internal Gate Resistance
—
1.7
—
—
1.85
2.15
—
2.25
2.55
—
2.37
2.80
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ
RG
VCE(on)
Collector-to-Emitter Saturation Voltage
Max. Units
—
V
Conditions
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
Ω
1MHz, Open Collector
IC = 22A, VGE = 15V
V
IC = 22A, VGE = 15V, TJ = 125°C
IC = 35A, VGE = 15V, TJ = 125°C
—
3.00
3.45
Gate Threshold Voltage
3.0
4.0
5.0
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-10
—
gfe
Forward Transconductance
—
36
—
S
ICES
Collector-to-Emitter Leakage Current
—
3.0
375
µA
VGE = 0V, VCE = 600V
—
0.35
—
mA
VGE = 0V, VCE = 600V, TJ = 125°C
—
1.30
1.70
V
—
1.20
1.60
—
—
±100
IGES
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
4, 5,6,8,9
IC = 35A, VGE = 15V
VGE(th)
VFM
Ref.Fig
VGE = 0V, IC = 500µA
V
IC = 250µA
7,8,9
mV/°C VCE = VGE, IC = 1.0mA
VCE = 50V, IC = 22A, PW = 80µs
IF = 15A, VGE = 0V
10
IF = 15A, VGE = 0V, TJ = 125°C
nA
VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Qgc
Total Gate Charge (turn-on)
Parameter
—
160
Max. Units
240
Gate-to-Collector Charge (turn-on)
—
55
83
Conditions
nC
17
VCC = 400V
CT1
VGE = 15V
Qge
Gate-to-Emitter Charge (turn-on)
—
21
32
Eon
Turn-On Switching Loss
—
220
270
Eoff
Turn-Off Switching Loss
—
215
265
Etotal
Total Switching Loss
—
435
535
TJ = 25°C
td(on)
Turn-On delay time
—
26
34
IC = 22A, VCC = 390V
tr
Rise time
—
6.0
8.0
td(off)
Turn-Off delay time
—
110
122
tf
Fall time
—
8.0
10
Eon
Turn-On Switching Loss
—
410
465
Eoff
Turn-Off Switching Loss
—
330
405
Etotal
Total Switching Loss
—
740
870
TJ = 125°C
td(on)
Turn-On delay time
—
26
34
IC = 22A, VCC = 390V
tr
Rise time
—
8.0
11
td(off)
Turn-Off delay time
—
130
150
tf
Fall time
—
12
16
Cies
Input Capacitance
—
3715
—
VGE = 0V
Coes
Output Capacitance
—
265
—
VCC = 30V
Cres
Coes eff.
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Coes eff. (ER)
Effective Output Capacitance (Energy Related)
RBSOA
Reverse Bias Safe Operating Area
g
g
—
47
—
—
135
—
—
179
—
Ref.Fig
IC = 22A
IC = 22A, VCC = 390V
µJ
ns
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
f
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
TJ = 25°C
f
IC = 22A, VCC = 390V
µJ
ns
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
f
WF1,WF2
CT3
VGE = +15V, RG = 3.3Ω, L = 200µH
f
TJ = 125°C
pF
12,14
WF1,WF2
16
f = 1Mhz
VGE = 0V, VCE = 0V to 480V
FULL SQUARE
11,13
15
TJ = 150°C, IC = 120A
3
VCC = 480V, Vp =600V
CT2
Rg = 22Ω, VGE = +15V to 0V
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
—
42
60
—
74
120
—
80
180
—
220
600
—
4.0
6.0
—
6.5
10
ns
nC
A
TJ = 25°C
IF = 15A, VR = 200V,
TJ = 125°C
di/dt = 200A/µs
19
TJ = 25°C
IF = 15A, VR = 200V,
21
TJ = 125°C
TJ = 25°C
di/dt = 200A/µs
IF = 15A, VR = 200V,
19,20,21,22
TJ = 125°C
di/dt = 200A/µs
CT5
Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as C oes while VCE is rising from 0 to 80% VCES.
2
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70
350
60
300
50
250
40
200
Ptot (W)
IC (A)
IRGP35B60PD-EP
30
150
20
100
10
50
0
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
70
1000
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
IC A)
ICE (A)
100
10
40
30
20
10
0
1
10
100
0
1000
1
2
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
5
70
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
60
50
40
ICE (A)
ICE (A)
4
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
70
30
40
30
20
20
10
10
0
0
0
1
2
3
4
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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3
VCE (V)
5
0
1
2
3
4
5
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3
IRGP35B60PD-EP
800
10
700
600
T J = 25°C
9
T J = 125°C
8
7
VCE (V)
ICE (A)
500
400
300
ICE = 11A
6
ICE = 22A
5
ICE = 35A
4
200
TJ = 125°C
3
100
T J = 25°C
2
0
1
0
5
10
15
20
0
5
VGE (V)
10
15
20
VGE (V)
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
10
100
9
F
InstantaneousF
orw
ardC
urrent -I (A
)
8
VCE (V)
7
ICE = 11A
6
ICE = 22A
5
ICE = 35A
4
3
10
TJ = 150°C
TJ = 125°C
TJ =
25°C
2
1
0
5
10
15
1
0.8
20
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
800
1000
700
EON
Swiching Time (ns)
Energy (µJ)
600
500
400
EOFF
300
200
td OFF
100
tdON
tF
10
tR
100
0
1
0
5
10
15
20
25
30
35
40
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
0
10
20
30
40
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
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IRGP35B60PD-EP
800
1000
700
tdOFF
EON
Swiching Time (ns)
Energy (µJ)
600
500
400
EOFF
300
100
tdON
tF
10
200
tR
100
0
1
0
10
20
30
40
50
0
10
20
30
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
50
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
30
10000
Cies
25
Capacitance (pF)
20
Eoes (µJ)
40
RG ( Ω)
RG (Ω)
15
10
1000
Coes
100
Cres
5
0
0
100
200
300
400
500
600
10
700
0
20
VCE (V)
40
60
80
100
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
16
1.4
14
Normalized V CE(on) (V)
400V
12
VGE (V)
10
8
6
4
1.2
1.0
2
0
0.8
0
50
100
150
200
Q G , Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 22A
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-50
0
50
100
150
200
T J (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 22A, VGE= 15V
5
IRGP35B60PD-EP
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I IRRM - (A)
t rr - (ns)
I F = 30A
I F = 30A
60
I F = 15A
IF = 15A
10
I F = 5.0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
1000
di f /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
600
Q RR - (nC)
IF = 30A
400
I F = 15A
IF = 5.0A
I F = 5.0A
I F = 15A
I F = 30A
200
0
100
di f /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
6
100
100
1000
di f /dt - (A/µs)
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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IRGP35B60PD-EP
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.01
0.01
0.02
τJ
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
R3
R3
τ3
τC
τ
0.077
0.194
τ3
Ci= τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
0.139
0.000257
0.001418
0.020178
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.01
0.02
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
0.01
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.363
0.000112
0.864
0.473
0.001184
0.032264
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP35B60PD-EP
L
L
VCC
DUT
0
80 V
DUT
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
L
PFC diode
R=
DUT /
DRIVER
VCC
DUT
Rg
VCC
ICM
VCC
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
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IRGP35B60PD-EP
45
450
400
40
400
tf
300
90% ICE
200
350
30
300
20
5% VCE
150
15
100
5% ICE
50
0
-50
-0.20
Eoff Loss
0.00
0.20
0.40
30
25
90% test current
5
50
0
0
20
10% test current
150
100
35
tr
200
10
-5
0.80
0.60
40
TEST CURRENT
250
25
VCE (V)
VCE (V)
250
35
ICE (A)
350
45
15
ICE (A)
450
10
5% VCE
5
0
Eon Loss
-50
9.00
9.20
Time(µs)
9.40
-5
9.60
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
3
trr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I RRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. WF3 - Reverse Recovery Waveform and
Definitions
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IRGP35B60PD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2008
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