CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 81 CGY 81 Q627002G0078 MW 16 Maximum Ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 9 V Supply current ID 4 A TCh Tstg 150 °C -55...+150 °C PPulse tbd W Ptot Tbd W Characteristics Symbol max. Value Unit Channel-soldering point RthChS 11 K/W Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts ≤ 80 °C) Ts: Temperature at soldering point Thermal Resistance Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Functional Block Diagram: Vneg VD1 Control Circuit Vcon RF OUT RF IN Pin Configuration: Pin # Name 1 VD Cell 2 n. c. 3 Configuration Drain voltage preamplifier stage RF IN Cell RF IN 4 n. c. 5 Vneg Negative voltage 6 Vcon Control voltage 7 n. c. 8 n. c. 9 n. c. 10 n. c. 11 RF out RF out / drain voltage final stage 12 RF out RF out / drain voltage final stage 13 RF out RF out / drain voltage final stage 14 RF out RF out / drain voltage final stage 15 n. c. 16 n. c. Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Electrical Characteristics (TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, Idq=300mA, unless otherwise specified ) Characteristics Symbol min Frequency range f 824 Duty cycle typ tON/tOFF max Unit 849 MHz 100 % AMPS output power P 31,5 dBm TDMA output power P 30 dBm AMPS gain at max. output G 24 dB TDMA gain at max. output G 27 dB CDMA output power P 28 dBm CDMA gain at max. output G 28 dB Power ramping characteristic Full output power Pinch off Vcontr V 2.5 0.5 Adjacent Channel Power CDMA 900kHz offset 1.98 MHz offset Padj/Pmain Adjacent channel power TDMA adjacent alternate 2nd alternate Padj/Pmain -45 -54 AMPS efficiency PAE TDMA DC to RF efficiency @Padj=-26dBc at max. output PAE CDMA DC to RF efficiency @Padj=-42dBc at max. output PAE -28 –45 -45 55 dBc @ 30kHz dBc @ 30kHz % % 40 % 35 at Pout=10 dBm ( Iq set to 100mA ) 8 Receive band noise power density ( 869 to 894 MHz ) PRX Drain supply voltage range VD 2.7 Negative supply voltage range Vneg -5.0 Standby current @Vcon=0V Ipwr dwn 500 µA IQ 300 mA Current consumption at VContr IControl 2 mA Current consumption at VNEG INEG 2 mA Operating temperature range υ Quiescent current Siemens Aktiengesellschaft Semiconductor Group -30 3 3 3.5 -137 dBm/Hz 4.0 V -7 V +85 °C 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin To switch off the device please use reverse sequence. Application Circuit: 100p C7 1u0 C6 1u0 C5 1u0 C4 1u0 C3 Vd C2 C10 10p HQ RFout C9 C12 16 15 14 13 12 11 10 9 5p6 HQ 8n2 NC16 NC15 VD2/RFout4 VD2/RFout3 VD2/RFout2 VD2/RFout1 NC10 NC9 C8 3p9 C1 RFin VD1 NC2 RFin NC4 Vneg Vcon NC7 NC8 L2 1 2 3 4 5 6 7 8 33 nH IC1 100p L3 100p GND (backside MW16) 10n 10n C11 Vcon CGY81 17 C16 10 uH L1 3k9 33n R1 C14 Vaux 33n C15 1 3 C13 V2 1n0 CLK BC848B V1 680R R2 1n0 BAS 40-04 2 Evaluation Board Parts List Part Type Position Description Manufacturer Capacitor C1 3.9pF 0402 Siemens Capacitor C2, C7, C10 100pF 0402 Siemens Capacitor C3, C4, C5, C6 1uF 1206 Siemens Capacitor C8 5.6pF 0603 HQ AVX 06035J5R6GBT Capacitor C9 10pF 0603 HQ AVX 06035J100GBT Capacitor C11, C12 10 nF 0402 Siemens Capacitor C13, C15 1 nF 0402 Siemens Siemens Aktiengesellschaft Semiconductor Group 4 4 Part Number 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Part Type Position Description Manufacturer Capacitor C14, C16 33nF 0402 Siemens Inductor L1 10uH Siemens Inductor L2 33nH Air Coil H. David GmbH Inductor L3 8.2nH 0603 Resistor R1 3.9k 0402 Resistor R2 680 Ohm 0402 Diode V1 BAS40-04W Siemens Transistor V2 BC848B Siemens FR4, h=0.2mm, εr=4.5 Siemens Substrate Part Number PN/BV 1250 Evaluation Board: Vd CGY 81 Cell Band PA SIEMENS RFout RFout RFin L2 V2 RFin V1 Vaux Vcon CLK CLK Siemens Aktiengesellschaft Semiconductor Group 5 5 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Typical Performance in AMPS Operation Mode AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 60 900 35 70.00 50 750 30 60.00 25 50.00 20 40.00 Id [mA] TG [dB] 450 30 Pout [dBm] 600 40 300 20 TG [dB] 10 15 30.00 10 Pout [dBm] 20.00 PAE [%] 10.00 150 5 0 0 PAE [%] AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C Id [mA] 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 0.00 -15 -13 -11 7 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] Pin [dBm] AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C 34 58 56 PAE [%] Pout [dBm] 33 32 54 31 30 52 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 Vd [V] 4 58 57 56 PAE [%] Pout [dBm] 3.8 AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C 33 32.8 32.6 32.4 32.2 32 31.8 31.6 31.4 31.2 31 820 3.6 Vd [V] 55 54 53 825 830 835 840 845 52 820 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 825 830 835 840 845 850 f [MHz] 6 6 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Typical Performance in CDMA Operation Mode: 800 70 30 35 700 60 29 30 600 50 28 25 500 20 400 Pout [dBm] 15 300 PAE [%] 10 200 Id [mA] 5 -11 -9 -7 -5 -3 -1 1 ACP885 [dBc] 26 20 ACP1,98 [dBc] 25 24 23 0 14 3 16 18 20 22 28 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 825 830 835 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 825 830 830 835 840 845 850 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 835 840 845 850 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 840 CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA PAE [%] 825 835 30 f [MHz] CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA TG [dB] 26 Pout [dBm] f [MHz] 30 29 28 27 26 25 24 23 22 21 20 820 24 Pin [dBm] ACPR [dBc] 50 49 48 47 46 45 44 43 42 41 40 820 -13 30 10 0 -15 27 40 TG [dB] 100 0 ACPR [dBc] ACPR [dBc] 40 TG [dB] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 7 7 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 50 49 48 47 46 45 44 43 42 41 40 820 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 825 830 835 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 825 830 f [MHz] TG [dB] PAE [%] 825 830 835 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 830 835 840 845 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 850 835 840 845 850 845 850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 825 845 f [MHz] f [MHz] 50 49 48 47 46 45 44 43 42 41 40 820 840 CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 835 f [MHz] 60 59 58 57 56 55 54 53 52 51 50 820 825 830 835 840 f [MHz] 8 8 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 PAE [%] TG [dB] CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 825 830 835 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 835 840 845 850 f [MHz] f [MHz] Typical Performance in TDMA Operation Mode 900 80 30 40 800 70 29 35 700 60 28 30 600 25 500 50 27 20 400 40 26 15 300 10 PAE [%] 200 20 5 Id [mA] 100 10 0 35 34 33 32 31 30 29 28 27 26 25 820 -13 -11 -9 -7 -5 -3 -1 1 3 Padj [dBc] 24 Palt [dBc] 23 TG [dB] 22 0 5 14 16 18 20 22 24 26 28 Pin [dBm] Pout [dBm] TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA ACPR [dBc] -15 25 30 Pout [dBm] 0 ACPR [dBc] ACPR [dBc] 45 825 830 835 840 845 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group TG [dB] TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 55 54 53 52 51 50 49 48 47 46 45 820 825 830 835 840 30 845 850 f [MHz] 9 9 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 30 29 28 27 26 25 24 23 22 21 20 820 TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA 825 830 835 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 825 830 825 830 835 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 825 830 f [MHz] 830 835 840 845 850 TG [dB] 835 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 825 830 835 840 845 850 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 850 TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA PAE [%] 825 845 f [MHz] TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 840 TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 835 f [MHz] f [MHz] 10 10 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 35 34 33 32 31 30 29 28 27 26 25 820 TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA 825 830 835 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 825 830 f [MHz] 825 830 835 840 845 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 840 845 850 845 850 TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 835 f [MHz] 45 44 43 42 41 40 39 38 37 36 35 820 825 830 835 840 f [MHz] 11 11 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo CGY 81 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 12 12 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo