CGY 191 GaAs MMIC l l l l l Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 191 CGY 191 Q62702G74 MW 16 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 9 V Supply current ID 4 A TCh Tstg 150 °C -55...+150 °C PPulse tbd W Ptot tbd W Characteristics Symbol max. Value Unit Channel-soldering point RthChS 11 K/W Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts ≤ 80 °C) Ts: Temperature at soldering point Thermal Resistance Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Functional Block Diagram: Pin Configuration: Pin # Configuration 1 n. c. 2 n. c. 3 Vcon Control voltage 4 Vneg Negative voltage 5 n. c. 6 RF IN 7 n. c. 8 VD 1 9 n. c. 10 n. c. 11 RF out RF out / drain voltage final stage 12 RF out RF out / drain voltage final stage 13 RF out RF out / drain voltage final stage 14 RF out RF out / drain voltage final stage 15 n. c. 16 n. c. Siemens Aktiengesellschaft Semiconductor Group RF IN PCS Band Drain voltage preamplifier stage 2 2 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Electrical Characteristics (TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified ) Characteristics Symbol min Frequency range f 1850 Duty cycle typ tON/tOFF max Unit 1910 MHz 100 % TDMA output power P 29 dBm TDMA gain at max. output G 24 dB CDMA output power P 29 dBm CDMA gain at max. output G 24 dB Power ramping characteristic Vcontr V 2.5 0.5 Full output power Pinch off Adjacent Channel Power CDMA Padj/Pmain 1.25 MHz offset (PCS band) 1.98 MHz offset Adjacent channel power TDMA -45 -54 Padj/Pmain -28 -45 -45 adjacent alternate 2nd alternate TDMA DC to RF efficiency @Padj=-26dBc PAE 40 % PAE at max. output 40 at 10 dBm output power 4 Receive band noise power density PRX dBm/Hz -145 ( 1930 to 1990 MHz ) DC supply voltage range VD 2.9 Negative supply voltage range Vneg -5.0 Standby current @Vcon=0V Ipwr dwn Siemens Aktiengesellschaft Semiconductor Group dBc @ 30kHz % at max. output CDMA DC to RF efficiency @Padj=-42dBc dBc @ 30kHz 3 3 3.5 500 4.0 V -7.0 V µA 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Characteristics Symbol min typ Quiescent current max Unit 300 mA Current consumption at VContr IControl 2 mA Current consumption at VNEG INEG 2 mA Operating temperature range υ -30 +85 °C Power on sequence: 1. 2. 3. 4. connect negative voltage to PA connect control voltage to PA turn on Vd turn on Pin To switch off the device please use reverse sequence. Application Circuit: L3 33 nH GND (backside MW16) 10n 17 3p9 HQ C8 100p C1 C9 33 nH RFin 16 15 14 13 12 11 10 9 100p C10 NC16 NC15 VD2/RFout4 VD2/RFout3 VD2/RFout2 VD2/RFout1 NC10 NC9 L2 Vcon NC1 NC2 Vcon Vneg NC5 RFin NC7 VD1 C7 1 2 3 4 5 6 7 8 10n C11 IC1 RFout 100p CGY191 1u0 C6 1u0 C5 1u0 C4 C3 1u0 Vd C15 10 uH L1 3k9 33n R1 C12 Vaux 33n 1 C14 3 C13 V2 1n0 CLK BC848B V1 680R R2 1n0 BAS 40-04 2 Siemens Aktiengesellschaft Semiconductor Group 4 4 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Evaluation Board: CLK Vcon Vaux C12 Vcon V2 C13 R2 L1 RFout IC1 C9 C10 C3 C5 C6 L3 C7 L2 PCS Band PA SIEMENS CGY191 C8 C1 RFin RFin RFout V1 C14 CLK C11 C15 R1 Vaux C4 Vd Vd Evaluation Board Parts List: Part Type Capacitor Capacitor Capacitor Position C1, C11 C7, C9, C10 C8 Capacitor Capacitor Capacitor Inductor Air Coil C3, C4, C5, C6 C12, C15 C13, C14 L1 L2 Inductor Resistor Resistor Diode Transistor Substrate L3 R1 R2 V1 V2 Siemens Aktiengesellschaft Semiconductor Group Description 10nF 0402 100pF 0402 3,9pF 0603 High Q 1uF 1206 33nF 0402 1nF 0402 10uH 33nH Manufacturer Siemens Siemens AVX Siemens Siemens Siemens Siemens Horst David GmbH 33nH 0603 Toko 3,9k Siemens 680 Ohm Siemens BAS40-04W Siemens BC848B Siemens FR4, h=0.2mm,εr=4.5 Siemens 5 5 Part Number 06035J3R9BBT PN/BV 1250 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Typical Performance in CDMA Operation Mode: 80 26 700 70 25 30 600 60 24 25 500 50 23 20 400 15 300 Pout [dBm] 10 PAE [%] 200 5 Id [mA] 100 0 -8 -6 -4 -2 0 2 4 6 30 ACP1,25 [dBc] 21 20 ACP1,98 [dBc] 20 10 TG [dB] 19 18 0 8 14 16 18 20 22 24 26 28 30 Pin [dBm] Pout [dBm] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,0V, Pout=28dBm , Iq=250mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 60 49 59 48 58 47 57 ACPR [dBc] 50 46 45 44 56 55 54 43 53 42 52 41 51 40 1850 22 40 1860 1870 1880 1890 1900 50 1850 1910 TG [dB] 800 35 ACPR [dBc] 40 0 -10 ACPR [dBc] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C 1860 1870 f [MHz] 1880 1890 1900 1910 f [MHz] CDMA Mode: Gain vs. f Vd=3,0V, Pout=28dBm, Iq=250m A CDMA Mode: PAE vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 25 42 24 40 23 38 21 PAE [%] TG [dB] 22 20 19 36 34 18 17 32 16 15 1850 1860 1870 1880 1890 1900 30 1850 1910 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1860 1870 1880 1890 1900 1910 f [MHz] 6 6 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 50 60 49 59 48 58 47 57 ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 46 45 44 56 55 54 43 53 42 52 41 51 40 1850 1860 1870 1880 1890 1900 50 1850 1910 1860 1870 f [MHz] 40 24 39 23 38 22 37 21 36 PAE [%] TG [dB] 25 20 19 33 32 16 31 1880 1890 1900 30 1850 1910 1860 1870 50 60 49 59 48 58 47 57 46 45 44 54 53 52 41 51 1890 1900 50 1850 1910 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1910 55 42 1880 1900 56 43 1870 1890 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1880 f [MHz] f [MHz] 40 1850 1910 34 17 1870 1900 35 18 1860 1890 CDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A CDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 15 1850 1880 f [MHz] 1860 1870 1880 1890 1900 1910 f [MHz] 7 7 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 CDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 40 24 39 23 38 22 37 21 36 PAE [%] TG [dB] CDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 20 19 35 34 18 33 17 32 16 31 15 1850 1860 1870 1880 1890 1900 30 1850 1910 1860 1870 1880 1890 1900 1910 f [MHz] f [MHz] Typical Performance in TDMA Operation Mode: 800 35 700 30 600 25 500 20 400 15 10 200 PAE [%] 5 0 -10 300 Pout [dBm] 100 Id [mA] -6 -4 -2 0 2 4 6 25 60 24 50 23 40 22 30 21 20 Padj [dBc] 20 10 Palt [dBc] 19 TG [dB] 0 -8 70 18 0 8 14 16 18 Pin [dBm] 54 33 53 32 52 ACPR [dBc] ACPR [dBc] 55 34 31 30 29 28 30 49 48 47 26 46 1890 1900 45 1850 1910 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 26 50 27 1880 24 51 28 1870 22 TDMA Mode: Palt vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 35 1860 20 Pout [dBm] TDMA Mode: Padj vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 25 1850 TG [dB] 40 ACPR [dBc] TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C 1860 1870 1880 1890 1900 1910 f [MHz] 8 8 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 TDMA Mode: Gain vs. f Vd=3V, Pout=28dBm, Iq=250mA TDMA Mode: PAE vs. f Vd=3V, Pout=28dBm , Iq=250m A 25 45 24 44 23 43 22 42 PAE [%] TG [dB 21 ] 20 19 41 40 39 18 38 17 37 16 36 15 1850 1860 1870 1880 1890 1900 35 1850 1910 1860 1870 35 55 34 54 33 53 32 52 31 30 29 47 26 46 1890 1900 45 1850 1910 1860 1870 f [MHz] 44 23 43 22 42 21 41 PAE [%] TG [dB] 45 24 20 19 38 37 16 36 1890 1900 35 1850 1910 1860 1870 1880 1890 1910 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1900 39 17 1880 1910 40 18 1870 1890 TDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 1860 1880 f [MHz] TDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 15 1850 1900 49 48 1880 1910 50 27 1870 1900 51 28 1860 1890 TDMA Mode: Palt vs. f Vd=3,5V, Pout=29dBm , Iq=250m A ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 1850 1880 f [MHz] f [MHz] 9 9 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 TDMA Mode: Palt vs. f Vd=4V, Pout=30dBm , Iq=250m A 35 55 34 54 33 53 32 52 ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=4V, Pout=30dBm , Iq=250m A 31 30 29 51 50 49 28 48 27 47 26 46 25 1850 1860 1870 1880 1890 1900 45 1850 1910 1860 1870 f [MHz] 25 43 24 42 23 41 22 40 21 39 20 19 36 35 16 34 1880 1890 1900 33 1850 1910 1860 1870 1880 1890 1900 1910 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1910 37 17 1870 1900 38 18 1860 1890 TDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 15 1850 1880 f [MHz] 10 10 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 11 11 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo