INFINEON CGY181

CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Preliminary Datasheet
* Power amplifier for PCN/PCS applications
* Fully integrated 2 stage amplifier
* Operating voltage range: 2.7 to 6 V
* Overall power added efficiency 35 %
* Input matched to 50 Ω, simple output match
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(8-mm taped)
Package 1)
CGY 181
CGY 181
Q68000-A8883
MW 12
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
9
V
Negative supply voltage 2)
VG
-8
V
Supply current
ID
2
A
Channel temperature
TCh
150
°C
Storage temperature
Tstg
-55...+150
°C
RF input power
Pin
Ptot
25
dBm
5
W
RthChS
≤14
K/W
Total power dissipation (Ts ≤ 81 °C)
Ts: Temperature at soldering point
Thermal Resistance
Channel-soldering point
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V
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01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Functional block diagramm:
VG (1)
VTR (2)
VD1 (7)
Short description of CGY181
operation:
VD2 (11)
Control
Circuit
Pin (8)
Pout (11)
GND1 (6,9)
GND2
(3, 4, 5, 10)
A negative voltage between -4V to -6V
(stabilization not necessary) has to be
connected to the VG-pin, a positive
supply voltage has to be applied to the
VD-pins.
The VTR-pin has to switched to 0V
(GND) during transmit operation. The
MMIC CGY181 is self-biased, the
operating current is adjusted by the
internal control circuit.
In receive mode the VTR-pin is not
connected (shut off mode).
Pin #
Configuration
1
VG
Negative voltage at control circuit (-4V...-8V)
2
VTR
Control voltage for transmit mode (0V) or receive mode (open)
3,4,5,10
GND 2
RF and DC ground of the 2nd stage
6,9
GND 1
RF and DC ground of the 1st stage
7
VD1
Positive drain voltage of the 1st stage
8
RFin
RF input power
11
VD2,RFout
12
-
Positive drain voltage of the 2nd stage, RF output power
not connected
DC characteristics
Characteristics
Drain current
Symbol Conditions
stage 1 IDSS1
VD=3V, VG=0V, VTR n.c.
stage 2 IDSS2
min
typ
max
Unit
0.6
0.9
1.2
A
2.4
3.5
4.8
A
Drain current with
active current control
ID
VD=3V, VG=-4V, VTR=0V
Transconductance
gfs1
VD=3V, ID=350mA
0.28
0.32
-
S
(stage 1 and 2)
gfs2
VD=3V, ID=700mA
1.1
1.3
-
S
Vp
VD=3V, ID<500µA
-3.8
-2.8
-1.8
V
Pinch off voltage
1.0
A
(all stages)
Siemens Aktiengesellschaft
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01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Electrical characteristics
(TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Supply current
Symbol
min
typ
max
Unit
IDD
-
1.2
-
A
IG
-
2
3
mA
ID
-
400
-
µA
IG
-
10
-
µA
G
-
20.5
-
dB
G
14.5
15.5
-
dB
G
17.5
18.5
-
dB
P0
30.5
31.5
-
dBm
P0
33.5
34.5
-
dBm
η
-
37
-
%
η
-
35
-
%
-
-
dBc
IP3
-44.8
-70
-45.1
-75
1.9:1
41
IP3
44
Pin= 0 dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, Pin = 16 dBm
Output Power
VD=5V , Pin = 16 dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
Harmonics (Pin =16dBm)
2f0
VD=3.6V (Pout=31.85dBm) 3f0
Harmonics (Pin =16dBm)
2f0
VD=5V
(Pout=31.85dBm) 3f0
Input VSWR VD=3.6V
Third order intercept point
dBc
dBm
f1=1.7500GHz; f2=1.7502GHz; VD = 3.6V
Third order intercept point
dBm
f1=1.7500GHz; f2=1.7502GHz; VD = 5V
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
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01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 1, VD=3V
1,2
High current
1
ID [A]
Medium current
Low current
0,8
0,6
0,4
0,2
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
DC-Output characteristics - typical values of stage 1
0,8
VG=-0.25 V
0,7
-0.50 V
Ptot=1.25 W
0,6
-0.75 V
ID [A]
0,5
-1.00 V
-1.25 V
0,4
-1.50 V
0,3
-1.75 V
0,2
-2.00 V
0,1
-2.25 V
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
VD [V]
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
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01.02.96
HL EH PD 21
6
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 2, VD=3V
4,5
High current
4
Low current
ID [A]
Medium current
3,5
3
2,5
2
1,5
1
0,5
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
DC-Output characteristics - typical values of stage 2
3
VG=-0.50 V
2,5
Ptot=3.75 W
-0.75 V
ID [A]
2
-1.00 V
-1.25 V
1,5
-1.50 V
1
-1.75 V
-2.00 V
0,5
-2.25 V
-2.50 V
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
VD [V]
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
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01.02.96
HL EH PD 21
6
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Pout and PAE vs. Pin
40
40
35
35
30
30
25
25
20
20
15
15
10
PAE [%]
Pout [dBm]
( VD=3.6V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms )
10
Pout [dBm]
PAE [%]
5
5
0
0
-5
0
5
10
15
20
Pin [dBm]
Pout and PAE vs. Pin
40
35
35
30
30
25
25
20
20
15
15
10
Pout [dBm]
PAE [%]
10
5
5
0
-5
0
5
10
15
20
Pin [dBm]
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01.02.96
HL EH PD 21
PAE [%]
Pout [dBm]
( VD=5V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms )
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Output power at different temperatures
(VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
33
32
31
30
29
28
Pout [dBm]
27
26
25
24
23
22
T=-20°C
T=+20°C
T=+70°C
21
20
19
18
17
16
15
14
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Pin [dBm]
Power added efficiency at different temperatures
( VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
45
40
35
PAE [%]
30
25
20
T=-20°C
T=+20°C
T=+70°C
15
10
5
0
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
Pin [dBm]
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01.02.96
HL EH PD 21
20
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Output power at different temperatures
Pout [dBm]
(VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
T=-20°C
T=+20°C
T=+70°C
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Pin [dBm]
Power added efficiency at different temperatures
( VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
40
35
PAE [%]
30
25
20
T=-20°C
T=+20°C
T=+70°C
15
10
5
0
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
Pin [dBm]
Siemens Aktiengesellschaft
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01.02.96
HL EH PD 21
20
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Measured S-parameter at VD=3.6V and Pin=16dBm
(VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms)
30
25
20
MAG [dB]
15
10
5
MAG [S11]
0
MAG [S21]
-5
-10
-15
-20
1400
1500
1600
1700
1800
1900
2000
2100
f [MHz]
Measured S-parameter at VD=5V and Pin=16dBm
(VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms)
30
25
20
MAG [dB]
15
10
5
MAG [S11]
0
MAG [S21]
-5
-10
-15
-20
1400
1500
1600
1700
1800
1900
2000
2100
f [MHz]
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01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Pout vs. VD
( VG=-4V,f=1.75GHz, Pin=16dBm,pulsed with a duty cycle of 10%, ton=0.33ms)
37
36
Pout [dBm]
35
34
33
32
31
30
29
28
2,5
3
3,5
4
4,5
5
5,5
6
VD [V]
Performance of internal bias control circuit @VD=3V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
4,0
High current
3,5
Medium current
3,0
Low current
ID [A]
2,5
2,0
1,5
1,0
0,5
0,0
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
-VG [V]
Performance of internal bias control circuit @VD=5V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
3,5
High current
3,0
Medium current
ID [A]
2,5
Low current
2,0
1,5
1,0
0,5
0,0
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
-VG [V]
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01.02.96
HL EH PD 21
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Total Power Dissipation Ptot=f(TS)
Permissible pulse load Ptot_max/Ptot_DC = f(t_p)
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01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
CGY181 application board:
Part Type
CGY181
Description:
Siemens GaAs-MMIC
1nF
1nF
1nF
Capacitor SMD 0805
Capacitor SMD 0805
Capacitor SMD 0805
1p2
Capacitor SMD 0805
4µ7
Capacitor SMD Tantal
43nH
Coilcraft SMD Spring Inductor B10T
(distributed by Ginsbury Electronic GmbH
Am Moosfeld 85, D-81829 München
Tel.: 089/45170-223)
Layout size is 30mm x 26mm.
Principal circuit:
Original Size:
VG
+VD
1nF
4.7uF
1nF
43nH
VG (1)
VTR (2)
VTR
VD1 (7)
VD2 (11)
Control
Circuit
1nF
IN
Pout (11)
Pin (8)
OUT
1.2pF
GND1 (6, 9)
Siemens Aktiengesellschaft
GND2
(3, 4, 5, 10)
pg. 12/14
01.02.96
HL EH PD 21
CGY 181
GaAs MMIC
________________________________________________________________________________________________________
Emissions due to GMSK modulation:
Measurement was done with the following equipment:
negative supply
voltage
-4V
Pulsed Power
Supply
Trigger
VD=3.6V
pulsed with a duty cycle of 10%
gate delay 150us
gate length 75us
ton=0.577ms
VG
PCN Signal
Generator
VD
Pin=16dBm
ROHDE&SCHWARZ SME03
Siemens Aktiengesellschaft
IN
CGY181
OUT
VTR
pg. 13/14
Spectrum
Analyzer
HP 8561E
01.02.96
HL EH PD 21
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
APPLICATION - HINTS
1. CW - capability of the CGY181
Proving the possibility of CW - operations there must be known the total power dissipation of the
device. This value can be found as a function of temperature in the datasheet (page 12). The
CGY181 has a maximum total power dissipation of Ptot = 5 W.
As an example we take the operating point with a drain voltage VD = 3.6 V and a typical drain
current of ID=1.2A. So the maximum DC - power can be calculated to:
PDC = VD ⋅ I D = 4. 32W .
This value is smaller than 5W and CW - operation is possible.
By decoupling RF power out of the CGY181 the power dissipation of the device can be further
reduced. Assuming a power added efficiency PAE of 35 % the total power dissipation Ptot can be
calculated using the following formula:
P = P (1 − PAE ) = 4. 32W (1 − 0. 35) = 2.808W
tot
DC
2. Operation without using the internal current control
If you don' t want to use the internal current control, it is recommended to connect the negative
gate voltage at pin 2 (VTR) instead of pin 1 (VG). In that case VG is not connected.
3. Biasing and use considerations
Biasing should be timed in such a way the that gate voltage (VG) is always applied before the drain
voltages (VD), and when returning to the standby mode, the drain voltages have be removed before
the gate voltage.
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01.02.96
HL EH PD 21