CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple output match on PCB ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 0819 CGY 0819 Q62702G0076 MW 16 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 9 V Supply current ID 4 A TCh Tstg 150 °C -55...+150 °C PPulse tbd W Ptot tbd W Characteristics Symbol max. Value Unit Channel-soldering point RthChS 11 K/W Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts ≤ 80 °C) Ts: Temperature at soldering point Thermal Resistance Siemens Aktiengesellschaft Semiconductor Group 1 1 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Functional Block Diagram: Pin Configuration: Pin # Name 1 VD Cell 2 RF IN Cell RF IN Cell Band 3 Vneg Negative voltage 4 Vcon cell Control voltage cell. PA 5 Vcon PCS Control voltage PCS PA 6 Vneg Negative voltage 7 RF IN PCS RF IN PCS Band 8 VD PCS 9 RF out PCS RF out PCS 10 RF out PCS RF out PCS 11 RF out PCS RF out PCS 12 RF out PCS RF out PCS 13 GND RF Ground 14 RF out Cell RF out Cell 15 RF out Cell RF out Cell 16 RF out Cell RF out Cell Siemens Aktiengesellschaft Semiconductor Group Configuration Drain voltage cell preamplifier stage Drain voltage PCS preamplifier stage 2 2 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Electrical Characteristics (TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified ) Characteristics Frequency range Cellular frequency band PCS frequency band Duty cycle Symbol min typ max f Unit MHz 824 1850 849 1910 tON/tOFF 100 % AMPS output power P 31,5 dBm TDMA cellular output power P 30 dBm AMPS gain at max. output G 24 dB TDMA cellular gain at max. output G 27 dB TDMA PCS output power P 29 dBm TDMA PCS gain at max. output G 24 dB CDMA cellular output power P 28 dBm CDMA cellular gain at max. output G 28 dB CDMA PCS output power P 29 dBm CDMA PCS gain at max. output G 24 dB Power ramping characteristic Full output power Pinch off Vcontr 2.5 0.5 Adjacent Channel Power CDMA 900kHz offset (cellular band) 1.25 MHz offset (PCS band) 1.98 MHz offset Padj/Pmain Adjacent channel power TDMA adjacent alternate 2nd alternate Padj/Pmain -45 –45 -54 AMPS efficiency PAE TDMA DC to RF efficiency @Padj=-26dBc at max. output Cellular Band: PCS Band PAE CDMA DC to RF efficiency @Padj=-42dBc at max. output Cellular Band PCS Band PAE -28 –45 -45 55 dBc @ 30kHz dBc @ 30kHz % % 40 40 % 35 40 at Pout=10 dBm ( Iq set to 100mA ) Siemens Aktiengesellschaft Semiconductor Group V 8 3 3 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Characteristics Symbol min typ max Unit Receive band noise power density Cell band ( 869 to 894 MHz ) PCS band ( 1930 to 1990 MHz ) PRX DC supply voltage range VD 3 Negative supply voltage range Vneg -5.0 Standby current @Vcon=0V Ipwr dwn 500 µA IQ 300 mA Current consumption at VContr IControl 2 mA Current consumption at VNEG INEG 2 mA Operating temperature range υ Quiescent current dBm/Hz -137 -145 -30 3.5 4.0 V -7 V +85 °C Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin To switch off the device please use reverse sequence. Siemens Aktiengesellschaft Semiconductor Group 4 4 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 1u0 C14 1u0 C12 1k0 R3 R4 C11 V3 C13 Vd 100p 10p HQ C5 5p6 HQ C4 1u0 CGY0819 C17 3p9 HQ 17 BCP 72 C18 RFout PCS L2 GND (backside MW16) 100p RFout Cel 100p 100p 100p C10 10n 10n C9 C8 100p C6 16 15 14 13 12 11 10 9 C16 C7 RFin PCS RFout3Cell RFout2Cell RFout1Cell GND RFout4PCS RFout3PCS RFout2PCS RFout1PCS 33 nH 8n2 VD1Cell RFinCell VnegCell VconCell VconPCS VnegPCS RFinPCS VD1PCS 1u0 Vcon Cell Vcon PCS 1 2 3 4 5 6 7 8 100p C15 3p9 C1 L4 RFin Cell L3 IC1 C2 33 nH C3 Application Circuit: 10n C19 Vsw 68R 10n C20 10uH L1 3k9 R2 33n C21 Vaux 33n 1 C23 3 V1 C22 1n0 CLK BC848B V2 680R R1 1n0 BAS 40-04 2 Evaluation Board Parts List Part Type Position Description Manufacturer Capacitor C1 3.9pF 0403 Siemens Capacitor C2, C3, C6, C7, C10, C16, C18 100pF 0402 Siemens Capacitor C4 5.6pF 0603 HQ AVX 06035J5R6GBT Capacitor C5 10pF 0603 HQ AVX 06035J100GBT Capacitor C8, C9, C11, C19 10nF0402 Siemens Capacitor C12, C13, C14, C15 1u0 1206 Capacitor C17 3.9pF 0603 HQ AVX Capacitor C20, C21 33nF 0402 Siemens Capacitor C22, C23 1nF 0402 Siemens Siemens Aktiengesellschaft Semiconductor Group 5 5 Part Number 06035J3R9BBT 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Part Type Position Description Manufacturer Inductor L1 10uH Siemens Inductor L2, L3 Air Coil 33nH H. David GmbH Inductor L4 8.2nH 0603 TOKO Resistor R1 680 Ohm 0402 Resistor R2 3.9k 0402 Resistor R3 68 Ohm 0805 Resistor R4 1.0k 0402 Transistor V1 BC848B Siemens Diode V2 BAS40-04W Siemens Transistor V3 BCP72 Siemens IC IC1 CGY0819 Siemens FR4, h=0.2mm,εr=4.5 Siemens Substrate Part Number PN/BV 1250 Evaluation Board: Vcon Cell L4 C4 C2 C9 C6 RFout Cell C1 C19 Cellular L3 C3 RFin Cell Vcon Siemens Dual Band PA C5 IC1 C18 C17 C11 C7 C8 RFout PCS RFin PCS L2 C16 Vd Vsw C21 R1 C22 R2 Vaux Vcon PCS L1 C20 Vsw Vd Vcon V2 C23 R3 R4 CGY0819 V3 C14 C15 V1 C12 C13 C10 PCS CLK Vaux CLK Siemens Aktiengesellschaft Semiconductor Group 6 6 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in Cellular AMPS Operation Mode 70.00 60 900 30 60.00 50 750 25 50.00 40 600 20 40.00 30 450 15 30.00 TG [dB] PAE [%] Pout [dBm] 35 5 300 20 Pout [dBm] 20.00 PAE [%] 10.00 10 Id [mA] AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C TG [dB] 10 150 Id [mA] 0.00 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 0 0 7 -15 -13 -11 -9 -7 -5 Pin [dBm] -3 -1 1 3 5 7 Pin [dBm] AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C 34 58 56 PAE [%] Pout [dBm] 33 32 54 31 30 52 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 Vd [V] 4 58 57 56 PAE [%] Pout [dBm] 3.8 AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C 33 32.8 32.6 32.4 32.2 32 31.8 31.6 31.4 31.2 31 820 3.6 Vd [V] 55 54 53 825 830 835 840 845 52 820 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 825 830 835 840 845 850 f [MHz] 7 7 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in Cellular CDMA Operation Mode: 800 70 30 35 700 60 29 30 600 50 28 25 500 20 400 Pout [dBm] 15 300 PAE [%] 10 200 Id [mA] 5 -11 -9 -7 -5 -3 -1 1 ACP885 [dBc] 26 20 ACP1,98 [dBc] 25 24 23 0 14 3 16 18 20 22 28 CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 825 830 835 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 825 830 830 835 840 845 850 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 835 840 845 850 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 840 CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA PAE [%] 825 835 30 f [MHz] CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA TG [dB] 26 Pout [dBm] f [MHz] 30 29 28 27 26 25 24 23 22 21 20 820 24 Pin [dBm] ACPR [dBc] 50 49 48 47 46 45 44 43 42 41 40 820 -13 30 10 0 -15 27 40 TG [dB] 100 0 ACPR [dBc] ACPR [dBc] 40 TG [dB] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 8 8 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 C DMA Mode: AC PR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 50 49 48 47 46 45 44 43 42 41 40 820 ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 825 830 835 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 825 830 f [MHz] TG [dB] PAE [%] 825 830 835 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 830 835 840 845 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 850 835 840 845 850 845 850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 825 845 f [MHz] f [MHz] 50 49 48 47 46 45 44 43 42 41 40 820 840 CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 835 f [MHz] 60 59 58 57 56 55 54 53 52 51 50 820 825 830 835 840 f [MHz] 9 9 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 PAE [%] TG [dB] CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 825 830 835 840 845 850 40 39 38 37 36 35 34 33 32 31 30 820 825 830 835 840 845 850 f [MHz] f [MHz] Typical Performance in Cellular TDMA Operation Mode 900 80 30 40 800 70 29 35 700 60 28 30 600 25 500 50 27 20 400 40 26 15 300 10 PAE [%] 200 20 5 Id [mA] 100 10 0 35 34 33 32 31 30 29 28 27 26 25 820 -13 -11 -9 -7 -5 -3 -1 1 3 Padj [dBc] 24 Palt [dBc] 23 TG [dB] 22 0 5 14 16 18 20 22 24 26 28 Pin [dBm] Pout [dBm] TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA ACPR [dBc] -15 25 30 Pout [dBm] 0 ACPR [dBc] ACPR [dBc] 45 825 830 835 840 845 850 f [MHz] Siemens Aktiengesellschaft Semiconductor Group TG [dB] TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 55 54 53 52 51 50 49 48 47 46 45 820 825 830 835 840 30 845 850 f [MHz] 10 10 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 30 29 28 27 26 25 24 23 22 21 20 820 TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA 825 830 835 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 825 830 825 830 835 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 825 830 f [MHz] 830 835 840 845 850 TG [dB] 835 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 825 830 835 840 845 850 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 850 TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA PAE [%] 825 845 f [MHz] TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 840 TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 35 34 33 32 31 30 29 28 27 26 25 820 835 f [MHz] f [MHz] 11 11 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 35 34 33 32 31 30 29 28 27 26 25 820 TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA 825 830 835 840 845 850 55 54 53 52 51 50 49 48 47 46 45 820 825 830 835 f [MHz] 825 830 845 850 845 850 TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA 30 29 28 27 26 25 24 23 22 21 20 820 840 f [MHz] 835 840 845 850 45 44 43 42 41 40 39 38 37 36 35 820 825 830 835 f [MHz] 840 f [MHz] Typical Performance in PCS CDMA Operation Mode: 800 80 26 35 700 70 25 30 600 60 24 25 500 50 23 20 400 40 22 15 300 ACPR [dBc] 40 30 ACP1,25 [dBc] 21 10 PAE [%] 200 20 ACP1,98 [dBc] 20 5 Id [mA] 100 10 0 -10 Pout [dBm] 0 -8 -6 -4 -2 0 2 4 6 19 18 0 8 14 Pin [dBm] Siemens Aktiengesellschaft Semiconductor Group TG [dB] TG [dB] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C 16 18 20 22 24 26 28 30 Pout [dBm] 12 12 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 50 60 49 59 48 58 47 57 ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 46 45 44 56 55 54 43 53 42 52 41 51 40 1850 1860 1870 1880 1890 1900 50 1850 1910 1860 1870 f [MHz] 1880 1890 1900 1910 f [MHz] CDMA Mode: Gain vs. f Vd=3,0V, Pout=28dBm, Iq=250m A CDMA Mode: PAE vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 25 42 24 40 23 38 21 PAE [%] TG [dB] 22 20 19 36 34 18 17 32 16 15 1850 1860 1870 1880 1890 1900 30 1850 1910 1860 1870 f [MHz] 50 60 49 59 48 58 47 57 46 45 44 54 53 52 41 51 1880 1890 1900 50 1850 1910 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1910 55 42 1870 1900 56 43 1860 1890 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 40 1850 1880 f [MHz] 1860 1870 1880 1890 1900 1910 f [MHz] 13 13 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 CDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 40 24 39 23 38 22 37 21 36 PAE [%] TG [dB] CDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 20 19 35 34 18 33 17 32 16 31 15 1850 1860 1870 1880 1890 1900 30 1850 1910 1860 1870 50 60 49 59 48 58 47 57 46 45 44 54 53 52 41 51 1880 1890 1900 50 1850 1910 1860 1870 f [MHz] 39 23 38 22 37 21 36 PAE [%] TG [dB] 40 24 20 19 33 32 16 31 1890 1900 30 1850 1910 1860 1870 1880 1890 1900 1910 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1910 34 17 1880 1900 35 18 1870 1890 CDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 1860 1880 f [MHz] CDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 15 1850 1910 55 42 1870 1900 56 43 1860 1890 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A ACPR [dBc] ACPR [dBc] CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 40 1850 1880 f [MHz] f [MHz] 14 14 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Typical Performance in PCS TDMA Operation Mode: 800 35 700 30 600 25 500 20 400 15 10 200 PAE [%] 5 0 -10 300 Pout [dBm] 100 Id [mA] -6 -4 -2 0 2 4 6 25 60 24 50 23 40 22 30 21 20 Padj [dBc] 20 10 Palt [dBc] 19 TG [dB] 0 -8 70 18 0 8 14 16 18 Pin [dBm] 54 33 53 32 52 ACPR [dBc] ACPR [dBc] 55 34 31 30 29 47 26 46 1890 1900 45 1850 1910 1860 1870 f [MHz] 44 23 43 22 42 21 41 PAE [%] TG [dB] 45 24 20 19 1900 1910 1900 1910 39 38 17 37 16 36 1890 1900 35 1850 1910 1860 1870 1880 1890 f [MHz] f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1890 40 18 1880 1880 TDMA Mode: PAE vs. f Vd=3V, Pout=28dBm , Iq=250m A 25 1870 30 f [MHz] TDMA Mode: Gain vs. f Vd=3V, Pout=28dBm , Iq=250m A 1860 28 49 48 15 1850 26 50 27 1880 24 51 28 1870 22 TDMA Mode: Palt vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 35 1860 20 Pout [dBm] TDMA Mode: Padj vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 25 1850 TG [dB] 40 ACPR [dBc] TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C Id [mA] Pout [dBm], PAE [%] TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C 15 15 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: Palt vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 35 55 34 54 33 53 32 52 ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 31 30 29 51 50 49 28 48 27 47 26 46 25 1850 1860 1870 1880 1890 1900 45 1850 1910 1860 1870 f [MHz] 45 24 44 23 43 22 42 21 41 PAE [%] TG [dB] 25 20 19 38 37 16 36 1880 1890 1900 35 1850 1910 1860 1870 35 55 34 54 33 53 32 52 31 30 29 1900 1910 49 48 47 26 46 1890 1900 45 1850 1910 f [MHz] Siemens Aktiengesellschaft Semiconductor Group 1910 50 27 1880 1900 51 28 1870 1890 TDMA Mode: Palt vs. f Vd=4V, Pout=30dBm , Iq=250m A ACPR [dBc] ACPR [dBc] TDMA Mode: Padj vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1880 f [MHz] f [MHz] 25 1850 1910 39 17 1870 1900 40 18 1860 1890 TDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A TDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 15 1850 1880 f [MHz] 1860 1870 1880 1890 f [MHz] 16 16 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 TDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 43 24 42 23 41 22 40 21 39 PAE [%] TG [dB] TDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 20 19 38 37 18 36 17 35 16 34 15 1850 1860 1870 1880 1890 1900 33 1850 1910 Siemens Aktiengesellschaft Semiconductor Group 1860 1870 1880 1890 1900 1910 f [MHz] f [MHz] 17 17 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo CGY 0819 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer Siemens Aktiengesellschaft Semiconductor Group 18 18 16.09.98 1998-11-01 HL HF PE GaAs 1 / Fo