INFINEON CGY92

GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Datasheet
*Power amplifier for GSM or AMPS application
*Fully integrated 2 stage amplifier
*Operating voltage range: 2.7 to 6 V
*Overall power added efficiency 45 %
*Input matched to 50 ohms, simple output match
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CGY 92
CGY 92
Q68000-A8884
MW 12
Maximum ratings
Characteristics
Symbol
max. Value
Unit
9
V
Negative supply voltage
VD
VG
-6
V
Supply current
ID
2
A
Channel temperature
TCh
150
°C
Storage temperature
Tstg
-55...+150
°C
RF input power
Pin
25
dBm
PPulse
9
W
Ptot
5
W
RthChS
≤14
K/W
Positive supply voltage
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
Total power dissipation (CW, Ts ≤ 81°C)
Ts: Temperature at soldering point
Thermal Resistance
Channel-soldering point
1) Plastic body identical to SOT 223, dimensions see page 14
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17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Functional block diagramm:
Control circuit:
VG (1)
VTR (2)
VD1 (7)
VD2 (12)
The drain current ID of the CGY 92 is
adjusted by the internal control circuit.
Therefore a negativ voltage (-4V...-6V)
has to be supplied at VG. For transmit
operation VTR must be set to 0V. During
receive operation VTR should be disconnected (shut off mode).
Control
Circuit
Pin (8)
Pout (12)
GND1 (6, 9)
Pin #
GND2
(3, 4, 5, 10)
GND3 (11)
Configuration
1
VG
Negative voltage at control circuit (-4V...-6V)
2
VTR
Control voltage for transmit mode (0V) or receive mode (open)
3,4,5,10
GND 2
RF and DC ground of the 2nd stage
6,9
GND 1
RF and DC ground of the 1st stage
7
VD1
Positive drain voltage of the 1st stage
8
RFin
RF input power
11
GND 3
12
VD2, RFout
Ground for internal output matching
Positive drain voltage of the 2nd stage, RF output power
DC characteristics
Characteristics
Drain current
Symbol Conditions
stage 1 IDSS1
VD=3V, VG=0V, VTR n.c.
stage 2 IDSS2
min
typ
max
Unit
0.6
0.9
1.2
A
2.4
3.5
4.8
A
-
1.0
-
A
Drain current with
active current control
ID
VD=3V, VG=-4V, VTR=0V
Transconductance
gfs1
VD=3V, ID=350mA
0.28
0.32
-
S
(stage 1 and 2)
gfs2
VD=3V, ID=700mA
1.1
1.3
-
S
Vp
VD=3V, ID<500µA
-3.8
-2.8
-1.8
V
Pinch off voltage
(all stages)
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pg. 2/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Electrical characteristics
(TA = 25°C , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to
ground, unless otherwise specified, pulsed with a duty cycle of 10%, ton=0.33ms)
Characteristics
Supply current
Symbol
IDD
min
-
typ
1.05
max
-
Unit
A
IG
-
2
-
mA
ID
-
400
-
µA
IG
-
10
-
µA
G
27.0
29.0
-
dB
G
21.0
21.8
-
dB
Po
31.0
31.8
-
dBm
Po
32.3
33.1
-
dBm
Po
34.0
35.0
-
dBm
η
43
48
-
%
η
41
46
-
%
η
40
45
-
%
-
-
-46
-37
-48
-38
1.7 : 1
2.0 : 1
dBc
dBc
dBc
dBc
-
IP3
-
40
-
dBm
IP3
-
45
-
dBm
Pin=10dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power gain
VD=3V; Pin=10dBm
Output Power
VD=3V; Pin=10dBm
Output Power
VD=3.6V; Pin=10dBm
Output Power
VD=5V; Pin=10dBm
Overall Power added Efficiency
VD=3V; Pin=10dBm
Overall Power added Efficiency
VD=3.6V; Pin=10dBm
Overall Power added Efficiency
VD=5V; Pin =10dBm
Harmonics (Pin=10dBm)
VD=3V;
(Pout=32dBm)
Harmonics (Pin=10dBm)
VD=5V;
(Pout=35dBm)
2f0
3f0
2f0
3f0
Input VSWR VD=3.0V;
Third order intercept point
VD=3V; pulsed with a duty cycle of 10%;
f1=900.00MHz; f2=900.20MHz;
Third order intercept point
VD=4.8V; pulsed with a duty cycle of 10%;
f1=900.00MHz; f2=900.20MHz;
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pg. 3/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 1, VD=3V
1,2
High current
ID [A]
1
Medium current
Low current
0,8
0,6
0,4
0,2
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
DC-Output characteristics - typical values of stage 1
0,8
VG=-0.25 V
0,7
-0.50 V
Ptot=1.25 W
0,6
-0.75 V
ID [A]
0,5
-1.00 V
-1.25 V
0,4
-1.50 V
0,3
-1.75 V
0,2
-2.00 V
0,1
-2.25 V
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
VD [V]
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pg. 4/14
17.10.95
6
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 2, VD=3V
4,5
High current
4
ID [A]
Medium current
3,5
Low current
3
2,5
2
1,5
1
0,5
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
VG [V]
DC-Output characteristics - typical values of stage 2
3
VG=-0.50 V
2,5
Ptot=3.75 W
-0.75 V
ID [A]
2
-1.00 V
-1.25 V
1,5
-1.50 V
1
-1.75 V
-2.00 V
0,5
-2.25 V
-2.50 V
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
5,5
VD [V]
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HL EH PD 21
pg. 5/14
17.10.95
6
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Pout and PAE vs. Pin
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )
45
35
30
25
20
50
AAA
AAAA
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AAA
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A
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A
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A
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A
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AAA
Pout [dBm]
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
PAE [%]
AAAA
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AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAA
AAAA
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AAAA
AAA
AAAA
40
30
PAE [%]
Pout [dBm]
40
60
20
10
15
0
-5
0
5
10
15
Pin [dBm]
Pout and PAE vs. Pin
(VD=5V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms )
45
60
50
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A
AA
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Pout [dBm]
AAAA
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AAAA
AAA
AAAA
AAAAAAAAAPAE [%]
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AAA
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AAA
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AAA
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AAA
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35
30
25
20
40
30
PAE [%]
Pout [dBm]
40
20
10
15
0
-5
0
5
10
15
Pin [dBm]
Siemens Aktiengesellschaft
HL EH PD 21
pg. 6/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Output power at different temperatures
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
33
32
31
30
Pout [dBm]
29
28
T=-20°C
27
T=+20°C
26
T=+70°C
25
24
23
22
21
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Pin [dBm]
Power added efficiency at different temperatures
(VD=3V, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
50
45
40
PAE [%]
35
30
T=-20°C
T=+20°C
25
T=+70°C
20
15
10
5
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Pin [dBm]
Siemens Aktiengesellschaft
HL EH PD 21
pg. 7/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Measured S-parameter at VD=3V and Pin=9dBm
(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
30
25
20
Mag [dB]
15
10
5
MAG(s11)
MAG(s21)
0
-5
-10
-15
950
940
930
920
910
900
890
880
870
860
850
840
830
820
810
800
790
780
770
760
750
-20
f [MHz]
Measured S-parameter at VD=5V and Pin=9dBm
(VG=-4V, VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
30
25
20
Mag [dB]
15
10
5
MAG(s11)
MAG(s21)
0
-5
-10
-15
950
940
930
920
910
900
890
880
870
860
850
840
830
820
810
800
790
780
770
760
750
-20
f [MHz]
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pg. 8/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Output power vs. drain voltage
Pout [dBm]
(Pin=10dBm, VG=-4V, VTR=0V, f=900MHz, pulsed with a duty cycle of 10%, ton=0.33ms)
38
37
36
35
34
33
32
31
30
29
28
3,0
3,5
4,0
4,5
5,0
5,5
6,0
VD [V]
Performance of internal bias control circuit @VD=3V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
4,0
High current
3,5
Medium current
ID [A]
3,0
Low current
2,5
2,0
1,5
1,0
0,5
0,0
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
-VG [V]
Performance of internal bias control circuit @VD=5V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
3,5
High current
3,0
Medium current
ID [A]
2,5
Low current
2,0
1,5
1,0
0,5
0,0
1,0
1,5
Siemens Aktiengesellschaft
HL EH PD 21
2,0
2,5
3,0
3,5
-VG [V]
pg. 9/14
4,0
4,5
5,0
5,5
6,0
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Total Power Dissipation Ptot=f(TS)
Permissible pulse load Ptot_max/Ptot_DC = f(t_p)
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pg. 10/14
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Test circuit board:
Note:
By changing the position of the
6.8 pF capacitor at pin # 12 it is
possible to tune the board for
max. Pout or max. PAE. To
achieve the maximum output
power place the capacitor close
to the CGY92. For a better PAE
increase the distance between
the capacitor and the CGY92
device (2-5mm).
43nH
size: 30 x 26 mm
Principal circuit:
VG
+VD
1nF
4.7uF
1nF
43nH
VG (1)
VTR (2)
VTR
VD1 (7)
VD2 (12)
Control
Circuit
1nF
IN
Pout (12)
Pin (8)
OUT
6.8pF
GND1 (6, 9)
GND2
(3, 4, 5, 10)
GND3 (11)
2) Coilcraft SMD Spring Inductor
distribution by Ginsbury Electronic GmbH, Am Moosfeld 85 D-81829 München, Tel. 089/45170-223
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17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Emissions due to GMSK modulation:
Measurement was done with the following equipment:
negative supply
voltage
-4V
Pulsed Power
Supply
Trigger
VD=3V
pulsed with a duty cycle of 10%
ton=0.33ms
gate delay 150us
gate length 75us
VG
GSM Signal
Generator
ROHDE&SCHWARZ SME03
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HL EH PD 21
VD
Pin=8dBm
IN
CGY92
VTR
pg. 12/14
OUT
Spectrum
Analyzer
HP 8561E
17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
APPLICATION - HINTS
1. CW - capability of the CGY92
Proving the possibility of CW - operation there must be known the total power dissipation of the
device. This value can be found as a function of the temperature in the datasheet (page 10). The
CGY92 has a maximum total power dissipation of Ptot = 5 W.
As an example we take the operating point with a drain voltage VD = 3 V and a typical drain current
of ID=1.0 A. So the maximum DC - power can be calculated to:
PDC = VD ⋅ I D = 3W
This value is smaller than 5 W and CW - operation is possible.
By decoupling RF power out of the CGY92 the power dissipation of the device can be further
reduced. Assuming a power added efficiency (PAE) of 40 % the total power dissipation Ptot can be
calculated using the following formula:
Ptot = PDC (1− PAE ) = 3W (1− 0.40) = 1.8W
2. Operation without using the internal current control
If you don' t want to use the internal current control, it is recommended to connect the negative
supply voltage at pin 1 (VTR) instead of pin 2 (VG). In that case VG is not connected.
3. Biasing and use considerations
Biasing should be timed such that gate voltage (VG) is always applied before the drain voltage (VD),
and when returning to the standby mode, gate voltage should only be removed once the drain
voltage have been removed.
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17.10.95
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Published by Siemens AG, Bereich Bauelemente, Vertrieb,
Produkt-Information, Balanstraße 73, D-81541 München
 Siemens AG 1995. All Rights Reserved
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits implemented
within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact
the Offices of Semiconductor Group in Germany or the
Siemens Companies and Representatives world-wide
(see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
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17.10.95