BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration Package BBY 51-02W I Q62702-B0858 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Jul-23-1998 1998-11-01 BBY 51-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 100 DC characteristics Reverse current nA VR = 6 V Reverse current VR = 6 V, TA = 65 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 4.5 5.3 6.1 VR = 2 V, f = 1 MHz 3.4 4.2 5.2 VR = 3 V, f = 1 MHz 2.7 3.5 4.6 VR = 4 V, f = 1 MHz 2.5 3.1 3.7 CT1/C T4 1.55 1.75 2.2 - C1V-C 3V 1.4 1.78 2.2 pF C3V-C 4V 0.3 0.5 0.7 rs - 0.37 - Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-23-1998 1998-11-01 BBY 51-02W Diode capacitance CT = f (V R) f = 1MHz per diode, f = 1MHz EHD07128 10 CT Temperature coefficient TCc = f (V R), EHD07129 10 4 ppa TCC C pF 8 10 3 6 4 10 2 2 0 0 Semiconductor Group Semiconductor Group 2 4 V VR 10 1 0 10 6 33 5 10 1 V VR 10 2 Jul-23-1998 1998-11-01