BAT 64-07 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAT 64-07 67s Q62702-A964 Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus) IFAV Surge forward current (t ≤ 10ms) IFSM Total Power dissipation Values 120 800 Ptot TS = 61 °C Unit mW 250 Junction temperature Tj Storage temperature Tstg 150 °C - 55 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 495 RthJS ≤ 355 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jun-27-1996 BAT 64-07 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR µA VR = 25 V, TA = 25 °C - - 2 VR = 25 V, TA = 85 °C - - 200 IF = 1 mA - 320 350 mV IF = 10 mA - 385 430 V IF = 30 mA - 440 520 IF = 100 mA - 570 750 Forward voltage VF AC Characteristics Diode capacitance CT VR = 1 V, f = 1 MHz Semiconductor Group pF - 2 4 6 Jun-27-1996 BAT 64-07 Forward Current IF = f(VF) Reverse current IR = f (VR) TA = Parameter Diode capacitance CT = f (VR) f = 1MHz Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64-04... (IF per diode) Semiconductor Group 3 Jun-27-1996 BAT 64-07 Package Semiconductor Group 4 Jun-27-1996