BAT 70-05 Silicon Schottky Diodes • Parallel connection for maximum IF per package 4 • Low forward voltage drop • For power supply 3 • For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Ratings Parameter Symbol Reverse voltage, TS < 75°C 1) VR 50 Reverse voltage, TS < 50°C 1) VR 70 Peak reverse voltage, T S < 70°C, t < 10ms 2) VRM 70 Forward current IF 1.5 Average forward current (50/60Hz, sinus) I FAV 1.5 Surge forward current (t< 100µs) I FSM 5 Total power dissipation, T S ≤ 130 °C Ptot 1.5 Total power dissipation, both diodes, T S ≤ 120 °C Ptot Junction temperature Tj T stg Storage temperature Value Unit V A W 3 150 °C - 65 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 82 RthJS ≤12 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 2) see DC/pulse derating curve V R = f (T A) Semiconductor Group Semiconductor Group 11 Jun-02-1998 1998-11-01 BAT 70-05 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values min. typ. Unit max. DC characteristics IR Reverse current µA VR = 50 V - 10 100 VR = 70 V - 60 1000 - 1 15 IR Reverse current mA VR = 50 V, TA = 75 °C VF Forward voltage V I F = 1 mA - 0.2 - I F = 10 mA - 0.26 - I F = 100 mA - 0.33 - I F = 1.5 A - 0.52 0.6 AC characteristics CT Diode capacitance pF VR = 0 V, f = 1 MHz - 236 - VR = 10 V, f = 1 MHz - 48.8 - Forward voltage V F = f (TA) for t p = 10ms and 100ms, Duty cycle < 1/100 80 V VR 60 50 40 tp =DC tp =100ms tp =10ms 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA Semiconductor Group Semiconductor Group 22 Jun-02-1998 1998-11-01