INFINEON BFR380L3_10

BFR380L3
NPN Silicon RF Transistor
• High current capability and low noise figure for
wide dynamic range
3
• Low voltage operation
1
2
• Ideal for low phase noise oscillators up to 3.5 GHz
• Low noise figure: 1.1 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR380L3
Marking
FC
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
6
Collector-emitter voltage
VCES
15
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
2
Collector current
IC
80
Base current
IB
14
Total power dissipation1)
Ptot
380
mW
Junction temperature
TJ
150
°C
Storage temperature
T Stg
V
mA
TS ≤ 96°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 140
K/W
1T
S is measured on the collector lead at the soldering point to the pcb
calculation of RthJA please refer to Application Note AN077 Thermal Resistance
2For
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BFR380L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
6
9
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
nA
ICES
VCE = 5 V, VBE = 0
-
1
30
VCE = 15 V, VBE = 0
-
-
1000
ICBO
-
-
30
IEBO
-
10
500
hFE
90
120
160
Collector-base cutoff current
VCB = 5 V, I E = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 40 mA, VCE = 3 V, pulse measured
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BFR380L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
11
14
-
Ccb
-
0.45
0.8
Cce
-
0.18
-
Ceb
-
1
-
0.5
1.1
2.1
11.5
14
16.5
7.5
10
12.5
GHz
IC = 40 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 5 V, f = 1 MHz, V BE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, V BE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum Noise figure
NFmin
dB
IC = 8 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum available 1)
G ma
IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
|S 21e|2
Transducer gain
dB
IC = 40 mA, VCE = 3 V, Z S = ZL = 50Ω ,
f = 1.8 GHz
9.5
11.5
13.5
f = 3 GHz
5.5
7.5
9.5
-
29.5
-
ZS = ZL = 50Ω
-
16
-
ZS = ZSopt, ZL = ZLopt
-
19.5
-
Third order intercept point at output2)
IP 3
dBm
VCE = 3 V, I C = 40 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
1dB compression point at output
P-1dB
IC = 40 mA, VCE = 3V, f = 1.8 GHz
1/2
ma = |S 21e / S12e| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1G
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BFR380L3
SPICE Parameter
For the SPICE model as well as for the S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
You find the BFR380L3 SPICE model in the internet in MWO- and ADS- format which
you can import into these circuit simulation tools very quickly and conveniently.
The simulation data have been generated and verified using typical devices.
The BFR380L3 SPICE model reflects the typical DC- and RF-performance with
high accuracy.
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Package TSLP-3-1
BFR380L3
Package Outline
Bottom view
0.4 +0.1
0.6 ±0.05
0.5 ±0.035
2
1 ±0.05
3
0.65 ±0.05
3
1)
2
1
1)
0.05 MAX.
0.35 ±0.05
Pin 1
marking
2 x 0.15 ±0.035
2 x 0.25 ±0.035
1
0.25 ±0.035
1)
Top view
1)
1) Dimension applies to plated terminal
Foot Print
R0.1
0.2
0.225
0.2
0.225
0.315
0.35
1
0.3
0.945
0.35
0.45
0.275
0.6
0.355
For board assembly information please refer to Infineon website "Packages"
0.17
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
1.16
Pin 1
marking
8
4
0.76
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BFR380L3
Datasheet Revision History: 27 May 2010
This datasheet replaces the revisions from 10 July 2008 and 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revisions: 10 July 2008 and 30 March 2007
Page
Subject (changes since last revision)
1
Datasheet has final status
2
Typical values for leakage currents included, values for maximum leakage
currents reduced
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2010-05-28
BFR380L3
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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