BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP) Type Marking Ordering Code Pin Configuration Package BC 817-16W 6As Q62702-C2320 1=B 2=E 3=C SOT-323 BC 817-25W 6Bs Q62702-C2278 1=B 2=E 3=C SOT-323 BC 817-40W 6Cs Q62702-C2321 1=B 2=E 3=C SOT-323 BC 818-16W 6Es Q62702-C2322 1=B 2=E 3=C SOT-323 BC 818-25W 6Fs Q62702-C2323 1=B 2=E 3=C SOT-323 BC 818-40W 6Gs Q62702-C2324 1=B 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Values Unit V BC 817 W 45 BC 818 W 25 VCBO Collector-base voltage BC 817 W 50 BC 818 W 30 Emitter-base voltage VEBO 5 DC collector current IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA Total power dissipation, TS = 130°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 215 RthJS ≤ 80 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Dec-19-1996 BC 817-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC 817 W 45 - - IC = 10 mA, IB = 0 , BC 818 W 25 - - IC = 10 µA, IB = 0 , BC 817 W 50 - - IC = 10 µA, IB = 0 , BC 818 W 30 - - 5 - - VCB = 25 V, TA = 25 °C - - 100 nA VCB = 25 V, TA = 150 °C - - 50 µA Collector-base breakdown voltage Base-emitter breakdown voltage V(BR)CBO V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current Emitter cutoff current ICBO IEBO VEB = 4 V, IC = 0 DC current gain nA - - 100 hFE - IC = 100 mA, VCE = 1 V, BC ... 16 W 100 160 250 IC = 100 mA, VCE = 1 V, BC ... 25 W 160 250 400 IC = 100 mA, VCE = 1 V, BC ... 40 W 250 350 630 IC = 300 mA, VCE = 1 V, BC ... 16 W 60 - - IC = 300 mA, VCE = 1 V, BC ... 25 W 100 - - IC = 300 mA, VCE = 1 V, BC ... 40 W 170 - - Collector-emitter saturation voltage 1) VCEsat IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) - - 0.7 - - 1.2 VBEsat IC = 500 mA, IB = 50 mA 1) Pulse test: t < 300µs; D < 2% Semiconductor Group V 2 Dec-19-1996 BC 817-16W NPN Silicon AF Transistor Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance - pF - 6 - - 60 - Ceb VEB = 0.5 V, f = 1 MHz Semiconductor Group 170 Ccb VCB = 10 V, f = 1 MHz Emitter-base capacitance MHz 3 Dec-19-1996 BC 817-16W Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f(tp) 10 3 300 K/W mW Ptot RthJS TS 10 2 200 TA 150 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 10 0 50 0 0 20 40 60 80 100 10 -1 -6 10 120 °C 150 TA ,TS 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Permissible Pulse Load Ptotmax / PtotDC = f(tp) Collectot cutoff current ICBO = f (TA) VCB = 60V 10 3 - Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 Semiconductor Group 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 4 Dec-19-1996 BC 817-16W DC current gain hFE = f (IC) VCE = 1V Transition frequency fT = f (IC) VCE = 5V Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Semiconductor Group 5 Dec-19-1996