BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners 2 • Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAR 65-02W N Q62702-A1216 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 V Forward current IF 100 mA Operating temperature range T op - 55 ...+125 °C Storage temperature T stg - 55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit Jun-18-1998 1998-11-01 BAR 65-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - 0.93 1 V DC characteristics Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics CT Diode capacitance pF VR = 1 V, f = 1 MHz - 0.6 0.9 VR = 3 V, f = 1 MHz - 0.57 0.8 Ω rf Forward resistance I F = 5 mA, f = 100 MHz - 0.65 0.95 I F = 10 mA, f = 100 MHz - 0.56 0.9 - 0.6 - Ls Series inductance Semiconductor Group Semiconductor Group 22 nH Jun-18-1998 1998-11-01 BAR 65-02W Forward current IF = f (V F) Forward resistance rf = f(IF) f = 100MHz T A = 25°C 10 3 3.0 Ohm mA 2.4 10 2 RF IF 2.2 2.0 1.8 1.6 10 1 1.4 1.2 1.0 10 0 0.8 0.6 0.4 0.2 10 -1 400 500 600 700 800 mV 0.0 -1 10 1000 10 0 mA IF VF Diode capacitance CT = f (V R) f = 1MHz Diode capacitance CT = f (VR) f = 100MHz 1.0 1.0 pF CT pF 0.8 CT 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0 1 2 3 4 5 6 7 8 V 0.2 0 10 VR Semiconductor Group Semiconductor Group 1 2 3 4 5 6 7 8 V 10 VR 33 Jun-18-1998 1998-11-01