BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation 1 for VCO’s in mobile communications equipment VPS05176 • For control elements such as TCXOs and VCXOs Type Marking Ordering Code Pin Configuration Package BBY 57-03W 5 cathd.red Q62702-B918 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit Au 1998-11-01 -03-1998 BBY 57-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 1 IR - - 100 DC characteristics Reverse current nA VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 16.5 17.5 18.6 VR = 2.5 V, f = 1 MHz - 8.7 - VR = 3 V, f = 1 MHz - 7.1 - VR = 4 V, f = 1 MHz 4 4.73 5.5 CT1/C T3 - 2.45 - CT1/C T4 3 3.7 4.5 rs - 0.3 - Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BBY 57-03W Temperature coefficient of the diode Diode capacitance CT = f (V R) f = 1MHz capacitance TCc = f (VR) 10 -1 40 pF CT 1/°C T Cc 30 10 -2 25 20 15 10 -3 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 10 -4 0.0 4.0 VR 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VR Normalized diode capacitance C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter 1.04 - 1V CTA 1.02 /C 25°C 4V 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -30 -10 10 30 50 70 °C 100 TA Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -03-1998