BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53-03W white/5 1=C Q62702-B0825 Package 2=A SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 6 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Sep-11-1996 BBY 53-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 4 V, TA = 25 °C - - 10 VR = 4 V, TA = 65 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 4.8 5.3 5.8 VR = 3 V, f = 1 MHz 1.85 2.4 3.1 Capacitance ratio CT1/CT3 VR = 1 V, VR = 3 V, f = 1 MHz Series resistance 1.8 2.2 2.6 Ω rs VR = 1 V, f = 1 GHz Case capacitance - - 0.37 - CC f = 1 MHz Series inductance chip to ground Ls Semiconductor Group 2 pF - 0.12 - - 2 - nH Sep-11-1996 BBY 53-03W Diode capacitance CT = f (VR) f = 1MHz 6 pF CT 4 3 2 1 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V VR 3.0 Package Semiconductor Group 3 Sep-11-1996