INFINEON BFR35AP

BFR35AP
NPN Silicon RF Transistor
3
For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents
from 0.5mA to 20 mA
2
1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR35AP
Marking
GEs
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
15
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2.5
Collector current
IC
30
Base current
IB
4
Total power dissipation1)
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
V
mA
TS 48°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
365
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Aug-01-2001
BFR35AP
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
15
-
-
V
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
100
µA
hFE
40
100
200
-
Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector -base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gainIC = 15 mA, VCE = 8 V
2
Aug-01-2001
BFR35AP
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
3.5
5
-
Ccb
-
0.38
0.6
Cce
-
0.2
-
Ceb
-
0.7
-
AC Characteristics
Transition frequency
fT
GHz
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 2 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
-
1.8
-
f = 1.8 GHz
-
2.9
-
IC = 15 mA, VCE = 8 V, ZS = ZSopt,
ZL = ZLopt, f = 900 MHz
-
15
-
f = 1.8 GHz
-
9.5
-
f = 900 MHz
-
12.5
-
f = 1.8 GHz
-
7
-
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
IC = 15 mA, VCE = 8 V, ZS = ZL = 50,
1G
ma
= |S21 /S12| (k-(k2 -1)1/2 )
3
Aug-01-2001