IKW40T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : G - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW40T120 VCE IC VCE(sat),Tj=25°C Tj,max 1200V 40A 1.8V 150°C E P-TO-247-3-1 (TO-247AC) Package Ordering Code TO-247AC Q67040-S4520 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 75 TC = 100°C 40 Pulsed collector current, tp limited by Tjmax ICpul s 105 Turn off safe operating area - 105 VCE ≤ 1200V, Tj ≤ 150°C Diode forward current IF TC = 25°C 80 TC = 100°C 40 Diode pulsed current, tp limited by Tjmax IFpul s 105 Gate-emitter voltage VGE ±20 V tSC 10 µs Ptot 270 W °C 1) Short circuit withstand time VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1) 260 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.45 K/W RthJCD 0.81 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, TO-247AC RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 °C - 1.8 2.3 T j =1 2 5° C - 2.1 - T j =1 5 0° C - 2.3 - T j =2 5 °C - 1.75 2.3 T j =1 2 5° C - 1.75 - T j =1 5 0° C - 1.75 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 1 .5m A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 40 A V G E = 0V , I F = 4 0 A Gate-emitter threshold voltage VGE(th) I C = 1. 5m A, V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V mA T j =2 5 °C - - 0.4 T j =1 5 0° C - - 4.0 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 600 nA Transconductance gfs V C E = 20 V , I C = 40 A - 21 - S Integrated gate resistor RGint Power Semiconductors 6 2 Ω Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ Dynamic Characteristic Ciss V C E = 25 V , - 2500 - Coss V G E = 0V , - 130 - Reverse transfer capacitance Crss f= 1 MH z - 110 - Gate charge QGate V C C = 96 0 V, I C =4 0 A - 203 - nC nH Input capacitance Output capacitance pF V G E = 15 V Internal emitter inductance LE T O - 24 7A C - - 13 IC(SC) V G E = 15 V ,t S C ≤ 10 µs V C C = 6 0 0 V, T j = 25 ° C - 210 - measured 5mm (0.197 in.) from case Short circuit collector current 1) A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 48 - - 34 - - 480 - - 70 - - 3.3 - - 3.2 - - 6.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 60 0 V, I C = 4 0 A, V G E = 0/ 15 V , R G = 15 Ω, 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 °C , - 240 Diode reverse recovery charge Qrr V R = 6 00 V , I F = 4 0 A, - 3.8 µC Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ µs - 28 A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 370 ns mJ Anti-Parallel Diode Characteristic 1) 2) - ns A/µs Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 52 - - 40 - - 580 - - 120 - - 5.0 - - 5.4 - - 10.4 - Unit IGBT Characteristic ns Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0° C V C C = 60 0 V, I C = 4 0 A, V G E = 0/ 15 V , R G = 1 5Ω , 1) L σ =1 8 0n H, 1) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 5 0° C - 410 - ns Diode reverse recovery charge Qrr V R = 6 00 V , I F = 4 0 A, - 8.8 - µC Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ µs - 36 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 330 mJ Anti-Parallel Diode Characteristic 1) A/µs Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ 100A tp=3µs 100A 80A 10µs TC=110°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 60A 40A Ic 20A 10A 50µs 150µs 500µs 1A 20ms Ic DC 0A 10Hz 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 70A 60A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 250W 200W 150W 100W 50W 0W 25°C 50A 40A 30A 20A 10A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series 100A 100A 90A 90A 80A VGE=17V 70A 15V 60A 13V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT ^ 11V 50A 9V 40A 7V 30A VGE=17V 70A 15V 60A 13V 11V 50A 9V 40A 7V 30A 20A 20A 10A 10A 0A 0A 0V 1V 2V 3V 4V 5V 6V 0V 100A 90A 80A 70A 60A 50A 40A 30A 20A TJ=150°C 25°C 10A 0A 0V 2V 4V 6V 8V 10V 12V 2V 3V 4V 5V 6V 3,5V IC=80A 3,0V 2,5V 2,0V IC=40A 1,5V IC=25A 1,0V IC=10A 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 80A 6 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES 1000 ns tf td(on) tr 10ns 1ns 0A 20A 40A td(off) 100 ns tf td(on) tr 10 ns 1 ns 60A 5Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 15Ω 25Ω 35Ω 45Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) 7 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ Ets* 20,0mJ 15,0mJ Eon* 10,0mJ Eoff 5,0mJ 0,0mJ 10A 20A 30A 40A 50A 60A E off E on* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Eoff 5 mJ 15mJ 10mJ 5mJ Eon* 5Ω 15Ω 25Ω 35Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery E ts * Ets* 10 mJ 0 mJ 70A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 15mJ *) Eon and Ets include losses due to diode recovery 15 mJ 25,0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery *) Eon and Ets include losses due to diode recovery 10mJ Ets* 5mJ E off Eon* 0mJ 50°C 100°C 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) 8 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ 1nF 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 960V 10V Crss 5V 0V 0nC 50nC 100nC 150nC 200nC IC(sc), short circuit COLLECTOR CURRENT 10µs 5µs 12V 14V 10V 20V 300A 200A 100A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 15µs 0µs 10pF 250nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A) tSC, SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 9 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series VCE 600V 60A 400V 40A 200V 20A 0V 0.5us 1us 400V 200V ZthJC, TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.05 -2 10 K/W R1 τ, (s)= 1.10*10-1 1.56*10-2 1.35*10-3 1.51*10-4 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -3 10 K/W 10µs 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=15Ω, Tj = 150°C, Dynamic test circuit in Figure E) D=0.5 R,(K/W) 0.159 0.133 0.02 0.120 0.01 0.038 single pulse 0V 0A 0us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=15Ω, Tj = 150°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE IC 20A 0A 0us -1 40A VCE IC 10 K/W 600V 60A IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE ^ D=0.5 0.2 -1 10 K/W 0.1 0.05 R,(K/W) 0.228 0.257 0.02 0.238 0.01 0.087 single pulse R1 -2 10 K/W τ, (s)= 1.01*10-1 1.15*10-2 1.30*10-3 1.53*10-4 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -3 100µs 1ms 10ms 10 K/W 10µs 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ 400ns 300ns TJ=150°C 200ns TJ=25°C 100ns 0ns 400A/µs 600A/µs 800A/µs Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 500ns 4µC TJ=25°C 2µC 600A/µs 800A/µs TJ=25°C TJ=150°C 30A TJ=25°C 25A 20A 15A 10A 5A 400A/µs 600A/µs 800A/µs TJ=150°C -300A/µs -200A/µs -100A/µs -0A/µs 400A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) Power Semiconductors dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT -400A/µs 35A 11 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) 40A Irr, REVERSE RECOVERY CURRENT 6µC 0µC 400A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) 0A TJ=150°C 8µC 600ns 600A/µs 800A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ 100A TJ=25°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2,0V IF=80A 150°C 80A 60A 40A 40A 25A 10A 1,0V 0,5V 20A 0A 1,5V 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 12 -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ dimensions TO-247AC [mm] symbol min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 Q 13 0.0299 max H ∅P Power Semiconductors [inch] 3.61 6.12 0.1421 6.22 0.2409 0.2449 Preliminary / Rev. 1 Jul-02 IKW40T120 TrenchStop Series ^ i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 14 Preliminary / Rev. 1 Jul-02 IKW40T120 ^ TrenchStop Series Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Preliminary / Rev. 1 Jul-02