SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKB02N120 C G E PG-TO-263-3-2 VCE IC Eoff Tj Marking Package 1200V 2A 0.11mJ 150°C K02N120 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 6.2 TC = 100°C 2.8 Pulsed collector current, tp limited by Tjmax ICpul s 9.6 Turn off safe operating area - 9.6 VCE ≤ 1200V, Tj ≤ 150°C IF Diode forward current TC = 25°C 4.5 TC = 100°C 2 Diode pulsed current, tp limited by Tjmax IFpul s 9 Gate-emitter voltage VGE ±20 V tSC 10 µs Ptot 62 W -55...+150 °C 2 Short circuit withstand time VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, reflow soldering, MSL1 Ts 1 2 245 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Oct 07 SKB02N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 2.0 K/W RthJCD 4.5 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - 2.5 3.1 3.6 - 3.7 4.3 2.0 2.5 T j =1 5 0° C - 1.75 3 4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 1 00 µA Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C =2A T j =2 5 °C T j =1 5 0° C VF Diode forward voltage V V G E = 0V , I F = 2 A T j =2 5 °C Gate-emitter threshold voltage VGE(th) I C = 10 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V 5 µA T j =2 5 °C - - 25 T j =1 5 0° C - - 100 - - 100 nA 1.5 - S pF Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V Transconductance gfs V C E = 20 V , I C =2A Input capacitance Ciss V C E = 25 V , - 205 250 Output capacitance Coss V G E = 0V , - 28 34 Reverse transfer capacitance Crss f= 1 MH z - 12 15 Gate charge QGate V C C = 96 0 V, I C =2A - 11 - nC - 7 - nH - 24 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current 2) IC(SC) V G E = 15 V ,t S C ≤ 10 µs 10 0 V≤ V C C ≤ 12 0 0 V, T j ≤ 1 5 0° C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Oct 07 SKB02N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value Unit min. typ. max. - 23 30 - 16 21 - 260 340 - 61 80 - 0.16 0.21 - 0.06 0.08 - 0.22 0.29 50 ns IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 80 0 V, I C = 2A, V G E = 15 V /0 V , R G = 91 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 °C , - tS V R = 8 00 V , I F = 2 A, - tF d i F / d t =2 5 0 A/ µs - Diode reverse recovery charge Qrr - 0.10 µC Diode peak reverse recovery current Irrm - 4.2 A Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 400 A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value Unit min. typ. max. - 26 31 - 14 17 - 290 350 - 85 102 - 0.27 0.33 - 0.11 0.15 - 0.38 0.48 90 ns IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0° C V C C = 80 0 V, I C =2A , V G E = 15 V /0 V , R G = 91 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0° C - tS V R = 8 00 V , I F = 2 A, - tF d i F / d t =3 0 0 A/ µs - Diode reverse recovery charge Qrr - 0.30 µC Diode peak reverse recovery current Irrm - 6.7 A Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 110 A/µs 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2.3 Oct 07 SKB02N120 Ic 12A 10A tp=10µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 8A TC=80°C 6A TC=110°C 4A 2A 0A 10Hz 50µs 1A 150µs 500µs 0.1A 20ms Ic 100Hz DC 1kHz 10kHz 0.01A 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91Ω) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 7A 60W 6A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50W 40W 30W 20W 10W 0W 25°C 5A 4A 3A 2A 1A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.3 Oct 07 7A 7A 6A 6A 5A 4A 3A VGE=17V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SKB02N120 2A 1A 0A 0V 1V 2V 3V 4V 5V 6V 5A Tj=+150°C Tj=+25°C Tj=-40°C 2A 1A 5V 7V 9V 11V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE IC, COLLECTOR CURRENT 2A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 6A 0A 3V 3A 0A 0V 7V 7A 3A 4A VGE=17V 15V 13V 11V 9V 7V 1A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 4A 5A 6V 5V IC=4A 4V IC=2A 3V IC=1A 2V 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.3 Oct 07 SKB02N120 td(off) tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) tf 100ns td(on) tr tr 10ns 10ns 0A 2A 4A 6A 8A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1Ω, dynamic test circuit in Fig.E ) 0Ω 50Ω 100Ω 150Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E) 6V VGE(th), GATE-EMITTER THRESHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns -50°C 0°C 50°C 100°C max. 4V typ. 3V min. 2V 1V 0V -50°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91Ω, dynamic test circuit in Fig.E ) Power Semiconductors 5V 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.3 Oct 07 SKB02N120 0.5mJ 2.0mJ *) Eon and Ets include losses due to diode recovery. Ets* 1.5mJ Eon* 1.0mJ 0.5mJ Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 0.0mJ 0.3mJ 2A 4A 6A 0.1mJ 8A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1Ω, dynamic test circuit in Fig.E ) Eon* 0.2mJ 0.0mJ 0A Ets* 0.4mJ Eoff 0Ω 50Ω 100Ω 150Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E ) E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. Ets* 0.3mJ Eon* 0.2mJ 0.1mJ 0.0mJ -50°C Eoff ZthJC, TRANSIENT THERMAL IMPEDANCE 0.4mJ D=0.5 0 10 K/W 0.2 0.1 0.05 -1 R,(K/W) 0.66735 0.70472 0.62778 10 K/W 0.02 0.01 R1 50°C 100°C 150°C -2 1µs 10µs 100µs C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91Ω, dynamic test circuit in Fig.E ) Power Semiconductors R2 10 K/W single pulse 0°C τ, (s) 0.04691 0.00388 0.00041 Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.3 Oct 07 SKB02N120 20V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 15V 10V UCE=960V Coss 5V 0V 0nC 5nC 10nC 15n 10V 20V 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 30µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 40A 25µs 20µs 15µs 10µs 5µs 0µs 10V Crss 10pF 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A) tsc, SHORT CIRCUIT WITHSTAND TIME 100pF 11V 12V 13V 14V 20A 10A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) Power Semiconductors 30A 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) 8 Rev. 2.3 Oct 07 SKB02N120 0.4µC 250ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 200ns 150ns IF=2A 100ns 50ns IF=1A 0ns 100A/µs 200A/µs 300A/µs IF=1A 0.1µC 200A/µs 300A/µs 400A/µs d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 10A 8A IF=2A IF=1A 4A 2A 0A 100A/µs 200A/µs 300A/µs 300A/µs IF=1A IF=2A 200A/µs 100A/µs 0A/µs 100A/µs 400A/µs d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) Power Semiconductors OF REVERSE RECOVERY CURRENT 400A/µs d i r r /d t, DIODE PEAK RATE OF FALL Irr, REVERSE RECOVERY CURRENT IF=2A 0.2µC 0.0µC 100A/µs 400A/µs d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 6A 0.3µC 200A/µs 300A/µs 400A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 9 Rev. 2.3 Oct 07 SKB02N120 7A 3.0V 2.5V 5A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 6A TJ=150°C 4A 3A TJ=25°C 2A IF=2A 1.5V IF=1A 1.0V 0.5V 1A 0A 0V 1V 2V 3V 0.0V 0°C 4V VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage 40°C 80°C 120°C Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature D=0.5 0 10 K/W 0.2 0.1 0.05 -1 10 K/W R,(K/W) 0.10109 0.99478 1.07923 1.94890 0. 01 0.0 2 ZthJCD, TRANSIENT THERMAL IMPEDANCE IF=4A 2.0V R1 single pulse -2 10 K/W 1µs 10µs 100µs τ, (s) 0.38953 0.04664 0.00473 0.00066 R2 C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 10 Rev. 2.3 Oct 07 SKB02N120 PG-TO263-3-2 Power Semiconductors 11 Rev. 2.3 Oct 07 SKB02N120 i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. 12 Rev. 2.3 Oct 07 SKB02N120 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/5/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.3 Oct 07