GaAs MMIC CMY 210 Data Sheet • • • • • Ultralinear Mixer with integrated LO-Buffer Very high Input-IP3 of typical 24 dBm Very low LO-Power demand of typ. 0 dBm Suited for Up- and Down-Conversion Wide LO-Frequency Range < 500 MHz to > 2.5 GHz • Wide LO-Level Range • Single ended Ports • RF- and IF-Port Impedance 50 Ω • Operating Voltage Range: < 3 to 6 V • Very low Current Consumption of typical 6 mA • All Gold Metallization ESD: Electrostatic discharge sensitive device Observe handling Precautions! MW-6 Type Marking Ordering Code (tape and reel) Package1) CMY 210 M3 Q62702-M0016 MW-6 1) For detailed dimensions see Page 10. Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 4 VDD 0 6 V DC-Voltage at LO Input 3 V3 –3 0.5 V DC-Voltage at RF-IF Ports1) 1, 6 V1, 6 – 0.5 + 0.5 V Power into RF-IF Ports 1, 6 PIN,RF – 17 dBm Power into LO Input 3 PIN,LO – 10 dBm Channel Temperature – TCh – 150 °C Storage Temperature – Tstg – 55 150 °C 1) For DC test purposes only, no DC voltages at pins 1, 6 in application. Data Sheet 1 2001-01-01 GaAs Components CMY 210 Thermal Resistance Parameter Symbol Value Unit Channel to Soldering Point (GND) RthChS ≤ 100 K/W Electrical Characteristics TA = 25 °C; VDD = 3 V, see test circuit; fRF = 808 MHz; fLO = 965 MHz; PLO = 0 dBm; fIF = 157 MHz, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Operating Current IOP – 6.0 8.0 mA – Conversion Loss LC – 5.7 7.0 dB – SSB Noise Figure FSSB – 6.0 – dB – 2 Tone 3rd Order IMD dIM3 – 54 – dBc PRF1 = – 3 dBm PRF2 = – 3 dBm fRF1 = 806 MHz; fRF2 = 810 MHz; fLO = 965 MHz 3rd Order Input Intercept Point IP3IN 20 24 – dBm – Input Power P– 1 dB – 14 – dBm – LO Leakage at RF/IF-Port (1, 6) PLO 1, 6 – –8 – dBm – Data Sheet 2 2001-01-01 GaAs Components CMY 210 L1 IN / OUT RF 50 Ω L2 C1 OUT / IN IF 50 Ω 1 CMY 210 C3 L3 LO IN C2 6 3 4 2, 5 L4 C4 VDD Figure 1 EHT08981 Test Circuit/Application Example Notes for External Elements L1, C1: Filter for upper frequency. C2, L2: Filter for lower frequency. Each filter is a throughpath for the desired frequency (RF or IF) and isolates the other frequency (IF or RF) and its harmonics. These two filters must be connected to pin 1 and pin 6 directly. Parasitic capacitances at the ports 1 and 6 must be as small as possible. L4 and C4 are optimized by indicating lowest IOP at used LO-frequency; same procedure for L3. The ports 1, 3 and 6 must be DC open. Lumped Element Values for 800 MHz Test and Application Circuit fLO FRF FIF L1 C1 L2 C2 L3 C3 L4 C4 MHz MHz MHz nH pF nH pF nH pF nH pF 965 808 157 8.2 3.9 8.2 3.3 6.8 47 15 33 Data Sheet 3 2001-01-01 GaAs Components CMY 210 VD + 33 pF 15 nH 3.3 pF LO 33 pF VD + 6.8 nH LO CMY 210 IF 3.9 pF IF RF 8.2 nH 8.2 nH EHT08983 Actual size RF EHT08982 Figure 2 PCB-Layout for 800 MHz Test and Application Circuit Typical Lumped Element Values for Different RF-Frequencies fRF L1 C1 L2 C2 MHz nH pF nH pF 400 12 15 12 12 450 12 12 12 10 900 8.2 3.9 8.2 3.3 1500 3.3 2.7 3.3 2.2 1800 3.3 2.2 3.3 1.8 2000 3.3 1.8 3.3 1.2 2400 1.8 2.7 1.8 1.5 Typical Lumped Element Values for Different LO-Frequencies fLO L3 C3 L4 C4 MHz nH pF nH pF 500 15 82 47 82 750 6.8 33 22 33 800 6.8 33 18 33 950 6.8 27 15 27 Data Sheet 4 2001-01-01 GaAs Components CMY 210 Typical Lumped Element Values for Different LO-Frequencies (cont’d) fLO L3 C3 L4 C4 MHz nH pF nH pF 1100 6.8 27 12 27 1400 6.8 22 6.8 22 1600 6.8 18 4.7 18 1800 6.8 15 3.3 15 2000 6.8 12 2.2 12 2100 6.8 12 1.8 12 2300 4.7 12 1.2 12 General Description and Notes The CMY 210 is an all port single ended general purpose Up- and Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a low demand of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The internal mixers principle with one port RF and IF requires a frequency separation at pin 1 and 6 respectively. Note 1 Best performance with lowest conversion loss is achieved when each circuit or device for the frequency separation meets the following requirements: Input Filter: Throughpass for the signal to be mixed; reflection of the mixed signal and the harmonics of both. Output Filter: Throughpass for the mixed signal and reflection of the signal to be mixed and the harmonics of both. The impedance for the reflecting frequency range of each filter toward the ports 1 and 6 should be as high as possible. In the simplest case a series- and a parallel- resonator circuit will meet these requirements but also others as appropriate drop in filters or micro stripline elements can be used. The two branches with filters should meet immediately at the package leads of the port 1 and 6. Parasitic capacitances at these ports must be kept as small as possible. The mixer also can be driven with a source- and a load impedance different to 50 Ω, but performance will degrade at larger deviations. Data Sheet 5 2001-01-01 GaAs Components CMY 210 Note 2 The LO-Buffer needs an external inductor L4 at port 4; the value of inductance depends on the LO frequency. It is tuned for minimum IOP consumption into port 4. At lower LO frequencies it can be reduced by an additional capacitor C5. Note 3 The LO Input impedance at Port 3 can be matched with a series inductor. It also can be tuned for a minimum current IOP into port 4. C3 is a DC blocking capacitor. Since the input impedance of port 3 can be slightly negative at lower frequencies, the source reflection coefficient should be kept below 0.8 (Z0 = 50 Ω) within this frequency range. The Conversion Noise Figure FSSB is corresponding with the value of Conversion Loss LC. The LO signal must be clean of noise and spurious at the frequencies fLO ± fIF. Data Sheet 6 2001-01-01 GaAs Components CMY 210 Operating Current IOP = f (PLO), VDD = 3 V, fLO = Parameter IOP Conversion Loss LC = f (PLO), VDD = 3 V, fIF = 120 MHz, fLO = Parameter EHT08984 20 mA LC 2.5 GHz 2.0 GHz 1.5 GHz 1.0 GHz 0.5 GHz 16 14 8 7 12 6 10 5 8 4 6 3 4 2 2 1 0 -10 -8 -6 -4 -2 0 2 4 EHT08985 10 dB 2.5 GHz 2.0 GHz 1.5 GHz 0 -10 -8 -6 -4 -2 0 6 dBm 10 2 4 Conversion Loss LC = f (VDD), PLO = 0 dBm, fLO = 1500 MHz; fIF = 120 MHz LC Third Order IP3 IP3IN = f (PLO), PIN = 2 × – 3 dBm; fIF = 40/45 MHz, VDD = 3 V; fLO = Parameter EHT08986 10 dB 6 dBm 10 PLO PLO EHT08987 40 dBm IP3IN 8 30 7 6 25 5 4 0.5 GHz 1.5 GHz 2.0 GHz 2.5 GHz 20 3 2 15 1 0 0 1 2 3 4 5 6 7 8 10 -10 -8 -6 -4 -2 0 V 10 VDD Data Sheet 2 4 6 dBm 10 PLO 7 2001-01-01 GaAs Components CMY 210 Operating Current IOP = f (VDD), PLO = 0 dBm, fLO = 1500 MHz I OP LO-Leakage at Port 1, 6 PLO1, 6 = f (fLO), PLO = 0 dBm, VDD = 3 V EHT08988 20 mA PLO1, 6 16 -4 14 -6 12 -8 10 -10 8 -12 6 -14 4 -16 2 -18 0 EHT08989 0 dBm 0 1 2 3 4 5 6 7 8 -20 V 10 VDD Data Sheet 8 0 0.5 1 1.5 2 GHz 2.5 f LO 2001-01-01 GaAs Components CMY 210 Package Parameters Dim. min. A max. Gradient Remark – 1.1 – – A1 – 0.1 – – A2 – 1.0 – – b – 0.3 – – – b1 – 0.6 – – – c 0.08 – 0.15 – – D 2.8 – 3.0 – – E 1.2 – 1.4 – – |e| – 0.95 – – – |e1| – 1.9 – – – HE – – 2.6 – – LE – – 0.6 – – a – – – max. 10° 1) q – – – 2° … 30° – 1) nom. Applicable on all case top sides. Data Sheet 9 2001-01-01 GaAs Components CMY 210 Package Outlines MW-6 (Special Package) 1.1 max 2.9 ±0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10˚max 1.3 ±0.1 0.3 +0.1 -0.05 6 2.6 max 10˚max A 0.1 max 0.08...0.15 1.9 M 2˚... 30˚ B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet 10 Dimensions in mm 2001-01-01