CF 750 GaAs MMIC ________________________________________________________________________________________________________ Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking CF 750 MX Ordering code (taped) 1 Pin Configuration 2 3 4 Q62702-F1391 GND D G S Package 1) SOT 143 Circuit diagram: 20k D G S 500 Ω 5k 10pF GND Maximum ratings Symbol Unit VDS -VGS 8 V 5 V ID 80 mA +IGSM 2 mA Channel temperature TCh 150 °C Storage temperature range Tstg -55 ... +150 °C Total power dissipat. (TS<48°C) 2) Ptot 300 mW RthChGND 340 K/W Drain-source voltage Gate-source voltage Drain current Gate-source peak current Thermal resistance Channel-soldering point (GND) 1) For detailed dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point Siemens Aktiengesellschaft pg. 1/6 12.01.96 HL EH PD 21 CF 750 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics TA = 25°C, unless otherwise specified DC characteristics Drain-Source Breakdown Voltage Symbol min typ max Unit 8 - - V IDSS,P 1.6 2 2.8 mA IDSS - 50 - mA gm - 25 - mS VDS(BR) ID = 500 µA, -VGS=4V Drain Current VGGND= 0V, VDS= 3.8 V S-pin not connected Drain Current VGS= 0V, VDS= 3.8 V S-pin connected to GND Transconductance ID = 10 mA, VDS = 3.8 V S-pin connected to GND Electrical characteristics of CF 750 in Amplifier Application TA = 25 °C, VDGND = 3.8V, RS = RL = 50 Ω, unless otherwise specified Amplifier Application Power Gain Symbol - 1.6 - dB - -1 - dBm - 10 - dBm - 10 - dB - 1.9 - dB - -1 - dBm - 9 - dBm OPIP3 ID = 2 mA, f = 1.8 GHz Siemens Aktiengesellschaft dB IPIP3 ID = 2 mA, f = 1.8 GHz 3rd Order Intermodulation - F ID = 2 mA, f = 1.8 GHz 3rd Order Intermodulation 11 GPS ID = 2 mA, f = 1.8 GHz Noise Figure - OPIP3 ID = 2 mA, f = 900 MHz Power Gain Unit IPIP3 ID = 2 mA, f = 900 MHz 3rd Order Intermodulation max F ID = 2 mA, f = 900 MHz 3rd Order Intermodulation typ GPS ID = 2 mA, f = 900 MHz Noise Figure min pg. 2/6 12.01.96 HL EH PD 21 CF 750 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics of CF 750 in Mixer Application TA = 25 °C, VDGND = 3.8V, RS = RL = 50 Ω, unless otherwise specified Mixer Application Single Sideband Noise Figure f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm Conversion Gain f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm 3rd Order Intermodulation f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm 3rd Order Intermodulation f RF = 945 MHz, fLO = 900 MHz f IF = 45 MHz, PLO = 3 dBm Siemens Aktiengesellschaft Symbol min typ max Unit FSSB - 4.5 - dB Ga - 15 - dB IPIP3 - -5 - dBm OPIP3 - 10 - dBm pg. 3/6 12.01.96 HL EH PD 21 CF 750 GaAs MMIC ________________________________________________________________________________________________________ Typical Common Source S-Parameters Bias conditions: VDGND= 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5nH ) ! f GHz 0.01 0.1 0.25 0.5 0.75 1.00 1.25 1.5 1.75 2.00 2.25 2.5 2.75 3.00 S11 MAG 0.97 0.97 0.96 0.94 0.91 0.87 0.83 0.87 0.72 0.66 0.61 0.56 0.52 0.49 S21 ANG -1 -3 -8 -16 -26 -34 -42 -49 -57 -65 -73 -81 -87 -93 MAG 1.78 1.78 1.76 1.73 1.70 1.68 1.65 1.62 1.59 1.54 1.51 1.47 1.45 1.42 S12 ANG 179 175 169 155 141 127 118 108 95 82 71 60 52 45 MAG 0.002 0.008 0.015 0.027 0.039 0.046 0.052 0.061 0.066 0.069 0.071 0.073 0.074 0.075 S22 ANG 89 84 78 75 71 64 62 57 55 52 54 60 63 66 MAG 0.98 0.98 0.97 0.95 0.93 0.91 0.89 0.88 0.87 0.86 0.85 0.84 0.83 0.82 ANG -1 -2 -6 -11 -16 -22 -26 -30 -34 -38 -43 -48 -52 -56 Typical Common Source Noise Parameters Bias conditions: VD= 3 V, ID= 2 mA, Z = 50Ω f MHz 200 450 800 900 1200 1500 1800 1900 Γopt ( F ) MAG 0.80 0.79 0.68 0.63 0.58 0.54 0.52 0.50 Siemens Aktiengesellschaft ANG 5 12 23 26 34 42 51 53 Rn Ω 75 60 51 49 45 40 36 35 pg. 4/6 Rn/50Ω 1.50 1.20 1.02 0.98 0.90 0.80 0.72 0.70 F min dB 1.2 1.2 1.5 1.6 1.7 1.8 1.9 1.9 12.01.96 HL EH PD 21 CF 750 GaAs MMIC ________________________________________________________________________________________________________ Output characteristics ID = f (VDGND) at nominal operating point; S not connected. VGGND = 0V 2.0 ID [mA] -0.2V -0.4V 1.5 -0.6V -0.8V 1.0 -1.0V 0.5 0 1 2 3 4 5 6 7 VDGND [V] 8 Output characteristics ID = f (VDS), S connected to GND. 50 VGS=0V 40 ID [mA] VGS=-0.2V 30 VGS=-0.4V 20 VGS=-0.6V 10 VGS=-0.8V VGS=-1.0V 0 0 1 2 3 4 5 6 V DS Siemens Aktiengesellschaft pg. 5/6 7 8 [V] 12.01.96 HL EH PD 21 CF 750 GaAs MMIC ________________________________________________________________________________________________________ Mixer measurement and application circuit ( No. 1) + 3.8V IF 1 nF CF 750 D G RF S LO 1 nF * GND * must be high capacitance to ensure good IF grounding at source Amplifier measurement and application circuit (No. 2) + 3.8V 100pF RF CF 750 D G RF S 100 pF GND Siemens Aktiengesellschaft pg. 6/6 12.01.96 HL EH PD 21