Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (-2.4V max.) High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Part Number TP0604N3-G Product Summary Package Option Packing 3-Lead TO-92 1000/Bag 3-Lead TO-92 2000/Reel TP2404NW Die in wafer form --- TP2404NJ Die on adhesive tape --- TP2404ND Die in waffle pack --- TP0604N3-G P002 TP0604N3-G P003 TP0604N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. (V) RDS(ON) ID(ON) (max) (Ω) (min) (A) (max) (V) -40 2.0 -2.0 -2.4 BVDSS/BVDGS VGS(th) Pin Configuration TP0604N3-G P013 TP0604N3-G P014 DRAIN SOURCE GATE TO-92 (N3) For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-92 taping specifications and winding styles per EIA-468 Standard. Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF57 for layout and dimensions. Product Marking Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature S iT P 0604 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 (N3) -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Doc.# DSFP-TP0604 C082012 Supertex inc. www.supertex.com TP0604 Thermal Characteristics ID Power Dissipation ID Package (continuous)† (A) (pulsed) (A) @TA = 25OC (W) θja ( C/W) IDR† IDRM TO-92 -0.43 -4.2 0.74 132 -0.43 -4.2 O (A) (A) Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25 C unless otherwise specified) A O Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -40 - - V VGS = 0V, ID = -2.0mA VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - -3.0 -4.5 Gate body leakage - - -100 nA VGS = ± 20V, VDS = 0V - - -10 µA VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C -0.4 -0.6 - -2.0 -3.3 - - 2.0 3.5 - 1.5 2.0 - - 1.2 400 600 - ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) ON-state drain current RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/ C VGS = VDS, ID= -1.0mA O A Ω %/ C O VGS = -5.0V, VDS = -20V VGS = -10V, VDS = -20V VGS = -5.0V, ID = -250mA VGS = -10V, ID = -1.0A VGS = -10V, ID = -1.0A GFS Forward transductance CISS Input capacitance - 95 150 COSS Common source output capacitance - 85 120 CRSS Reverse transfer capacitance - 35 60 td(ON) Turn-on delay time - 5.0 8.0 Rise time - 7.0 18 Turn-off delay time - 10 15 Fall time - 6.0 19 Diode forward voltage drop - -1.3 -2.0 V VGS = 0V, ISD = -1.5A Reverse recovery time - 300 - ns VGS = 0V, ISD = -1.5A tr td(OFF) tf VSD trr mmho VDS = -20V, ID = -1.0A pF ns VGS = 0V, VDS = -20V, f = 1.0MHz VDD = -20V, ID = -1.0A, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulsed test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% td(ON) 0V OUTPUT VDD Doc.# DSFP-TP0604 C082012 tr td(OFF) 90% 10% RGEN 90% t(OFF) t(ON) D.U.T. tf INPUT OUTPUT RL 90% 10% 2 VDD Supertex inc. www.supertex.com TP0604 Typical Performance Curves Output Characteristics -5 -4 ID (amperes) -4 ID (amperes) Saturation Characteristics -5 VGS = -10V -3 -9V -2 -8V VGS = -10V -3 -9V -8V -2 -7V -7V -6V -1 -6V -1 -5V -5V -4V 0 0 -10 -20 -30 0 -40 -4V 0 -2.0 -4.0 Transconductance vs. Drain Current -10 Power Dissipation vs. Case Temperature 2.0 VDS = -25V 0.6 TA = 25OC 0.4 TA = -150OC PD (watts) TA = -55OC 0.8 GFS (siemens) -8.0 VDS (volts) VDS (volts) 1.0 -6.0 TO-92 1.0 0.2 0 0 -10 -1.0 -2.0 ID (amperes) 0 -3.0 Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) ID (amperes) -1.0 -0.01 -1 Doc.# DSFP-TP0604 C082012 TO-92 (DC) -10 VDS (volts) -100 25 50 75 100 125 150 TC (OC) TC = 25OC -0.1 0 0.8 TO-92 PD = 1.0W TC = 25OC 0.6 0.4 0.2 0 0.001 -1000 Thermal Response Characteristics 0.01 0.1 1.0 10 tp (seconds) 3 Supertex inc. www.supertex.com TP0604 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 7.5 RDS(ON) (ohms) BVDSS (normalized) 1.0 VGS = -10V VGS = -5.0V 6.0 5.0 3.0 1.5 0.9 -50 -5 0 50 100 0 150 0 -1.0 -2.0 -3.0 -0.4 -5.0 Tj (OC) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature VDS = -25OC 1.4 -4 A -3 = TA OC 25 O -2 = TA 1 50 C 1.2 V(th) @ -1.0mA 1.2 RDS(ON) @ -10V, -1.0A 1.0 0.8 0.8 RDS(ON) (normalized) = -5 VGS(th) (normalized) 5O C 1.6 T ID (amperes) 2.0 0.4 -1 0.6 0 0 -2.0 -4.0 -6.0 -8.0 -10 -50 0 50 VGS (volts) 200 0 150 100 Tj (OC) Capacitance vs. Drain-to-Source Voltage -10 f = 1.0MHz Gate Drive Dynamic Characteristics -8 VGS (volts) C (picofarads) 150 CISS 100 COSS 50 0 CRSS 180pF VDS = -40V -4 -2 75pF 0 -10 -20 -30 0 0 -40 VDS (volts) Doc.# DSFP-TP0604 C082012 VDS = -10V -6 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 4 Supertex inc. www.supertex.com TP0604 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E E1 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2012 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TP0604 C082012 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com