BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB420 Data sheet Revision History: 2001-08-10 Previous Version: 2000-11-28 Page Subjects (major changes since last revision) 7 S-Parameter table added 8 Figure “Output Compression Point” added 9 SPICE Model added For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT343 package • Current easy adjustable by an external resistor • Open collector output • Typical supply voltage: 1.4-3.3V • SIEGET®-25 technology Bias,4 C,3 Description SIEGET®-25 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . Bias B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGB420 SOT343 MBs T0514 Data sheet 4 2001-08-10 BGB420 Maximum Ratings Parameter Symbol Value Unit VCE 3.5 V Maximum collector-emitter voltage Maximum collector current IC 30 mA Maximum bias current IBias 3 mA Maximum emitter-base voltage VEB 1.5 V IB 0.7 mA Ptot 120 mW Maximum base current Total power dissipation, TS < 107°C1) Junction temperature Tj 150 °C Operating temperature range TOP -40 ..+85 °C Storage temperature range TSTG -65 ... +150 °C Thermal resistance: junction-soldering point Rth JS <270 K/W Notes: For detailed symbol description refer to figure 1. 1) TS is measured on the emitter lead at the soldering point to the PCB IBias IC Bias,4 C,3 Bias VCE B,1 VEB IB E,2 Fig. 1: Symbol definition Data sheet 5 2001-08-10 BGB420 ID RBias Bias-T IBias Bias,4 VD RF Out IC C,3 Bias B,1 E,2 N.C. RF In Bias-T Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2, min./max. values verified by random sampling) Parameter Symbol min. typ. Maximum available power gain VD=2V, Ic=20mA, f=1.8GHz GMA 16.0 17.5 dB Insertion power gain VD=2V, Ic=20mA f=0.9GHz f=1.8GHz |S21|2 22 16 dB Insertion loss VD=2V, Ic=0mA f=0.9GHz f=1.8GHz IL 21 15 dB Noise figure (ZS=50Ω) VD=2V, Ic=5mA f=0.9GHz f=1.8GHz F50Ω 1.3 1.5 Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50Ω P-1dB Output third order intercept point VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT ZL/S=50Ω OIP3 Collector-base capacitance VCB=2V, f=1MHz CCB Current Ratio IC/IBias IBias=0.5mA, VD=3V CR Data sheet 6 max. 1.8 2.0 Unit dB 12 10 dBm 7 22 20 dBm 17 0.16 pF 7 10 13 2001-08-10 BGB420 S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.4412 -24.8 35.7070 160.6 0.0078 83.5 0.9225 -14.1 0.2 0.4064 -47.4 31.7670 143.9 0.0157 77.5 0.8321 -26.2 0.4 0.3261 -81.6 23.1980 120.9 0.0261 70.9 0.6380 -41.4 0.6 0.2854 -105.8 17.2590 106.9 0.0351 69.4 0.5012 -49.6 0.8 0.2615 -124.2 13.5050 97.5 0.0444 68.9 0.4100 -54.2 1.0 0.2525 -136.4 10.9810 90.6 0.0537 68.2 0.3435 -57.4 1.2 0.2505 -148.9 9.1940 84.8 0.0628 67.3 0.2946 -60.2 1.4 0.2476 -158.2 7.8930 80.1 0.0720 65.9 0.2571 -62.6 1.6 0.2533 -167.1 6.9070 75.6 0.0819 64.6 0.2228 -64.2 1.8 0.2579 -173.3 6.1460 71.7 0.0915 62.9 0.1966 -66.0 2.0 0.2584 -178.7 5.5300 68.2 0.1009 61.4 0.1751 -66.3 3.0 0.2874 157.6 3.6990 51.6 0.1495 51.7 0.0802 -70.1 4.0 0.3505 139.0 2.7770 36.1 0.1970 40.4 0.0366 -178.8 5.0 0.4061 125.9 2.1930 21.5 0.2392 29.4 0.0913 126.7 6.0 0.4450 117.1 1.8050 8.6 0.2864 18.9 0.1340 99.8 Device Current I D = f(V , R D ) Bias 30 270Ω 25 820Ω I D [mA] 20 1.5kΩ 15 2.7kΩ 10 4.7kΩ 5 8.2kΩ 0 0 0.5 1 1.5 2 2.5 3 3.5 VD [V] Data sheet 7 2001-08-10 BGB420 2 Power Gain |S | , Gma, Gms=f(f) 21 V = 3V, I =20mA D Power Gain Gma, Gms=f(I ) C V = 3V C D 30 35 0.3GHz 30 25 Gma/Gms 0.9GHz Gma, Gms [dB] |S21|2, Gma, Gms [dB] 25 20 15 |S |2 21 20 1.9GHz 15 2.5GHz 10 10 5 5 0 0 0 1 2 3 4 5 6 0 5 10 15 Matching |S11|,|S22|=f(f) V = 3V, I =20mA D 20 25 30 35 IC [mA] Frequency [GHz] Output Compression Point P = f(I ) −1dB C V = 3V, f = 1.8GHz, Z = 50Ω C D 0 L 16 14 −5 S11 12 [dBm] 10 −1dB −15 −20 8 P |S11|, |S22| [dB] −10 6 −25 4 S22 −30 2 −35 0 0 1 2 3 4 5 6 0 Data sheet 5 10 15 20 25 30 IC [mA] Frequency [GHz] 8 2001-08-10 BGB420 SPICE Model BGB420-Chip 4 3 R2 R1 Q2 Q1 2 Q1 T502 Q2 T502 (area factor: 0.1) R1 2.7kΩ R2 27kΩ 1 Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax) .MODEL T502 NPN( + IS = 2.0045e-16 + IKF = 0.48731 + NR = 1.3325 + NC = 1.1724 + RE = 0.31111 + MJE = 0.46576 + ITF = 0.001 + MJC = 0.30232 + VJS = 0.75 + XTI = 3 BF = 72.534 ISE = 1.9049e-14 VAR = 19.705 RB = 8.5757 RC = 0.10105 TF = 6.7661e-12 PTF = 0 XCJC = 0.3 MJS = 0 FC = 0.73234) NF = 1.2432 NE = 2.0518 IKR = 0.69141 IRB = 0.00072983 CJE = 1.8063e-15 XTF = 0.42199 CJC = 2.3453e-13 TR = 2.3249e-09 XTB = 0 VAF = 28.383 BR = 7.8287 ISC = 1.9237e-17 RBM = 3.4849 VJE = 0.8051 VTF = 0.23794 VJC = 0.81969 CJS= 0 EG = 1.11 Package Equivalent Circuit L2 Bias C1 L1 CCB C3 C2 4 B LBO LBI 1 BGB420 Chip 3 LCI LCO C 2 CBE CCE LEI LEO 0.36 nH LB0 0.4 nH LEI 0.3 nH LEO 0.15 nH LCI 0.36 nH LCO 0.4 nH L1 0.6 nH L2 0.4 nH CBE 95 fF CCB 6 fF CCE 132 fF C1 28 fF C2 88 fF C3 8 fF Valid up to 3GHz E Data sheet LBI 9 2001-08-10 BGB420 Typical Application Voltage Supply DC Bypass L RF Out VBias RBias IC IBias 4 C 3 Fig. 3: Typical application circuit. This proposal demonstrates how to use the BGB420 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP420. BGB420 1 IC=10*IBias 2 C RF In Package Outline 2 ±0.2 0.9 ±0.1 B 1.3 ±0.1 0.20 M 0.1 max B 0.3 1 2 +0.2 acc. to DIN 6784 2.1±0.1 3 1.25 ±0.1 A 4 0.15 +0.1 -0.05 +0.1 0.6 +0.1 0.20 M A GPS05605 Data sheet 10 2001-08-10