BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration Package BBY 52-02W K 1=C SCD-80 Q62702-B0860 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Jul-23-1998 1998-11-01 BBY 52-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 100 DC characteristics Reverse current nA VR = 6 V Reverse current VR = 6 V, TA = 65 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 1.4 1.85 2.2 VR = 2 V, f = 1 MHz 0.95 1.5 2 VR = 3 V, f = 1 MHz 0.9 1.35 1.75 VR = 4 V, f = 1 MHz 0.85 1.15 1.45 1.1 1.6 2.1 - rs - 0.9 1.7 Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio CT1/C T4 VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-23-1998 1998-11-01 BBY 52-02W Diode capacitance CT = f (V R) f = 1MHz Reverse current IR = f (VR) TA = 25 °C 2.4 45 pF pA 2.0 CD IR 35 1.8 30 1.6 25 1.4 20 1.2 15 1.0 10 0.8 5 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 0 0.0 4.0 VR Semiconductor Group Semiconductor Group 1.0 2.0 3.0 4.0 5.0 V 7.0 VR 33 Jul-23-1998 1998-11-01