BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code Pin Configuration Package BBY 53-02W L Q62702-B0862 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Au 1998-11-01 -20-1998 BBY 53-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 200 DC characteristics Reverse current nA VR = 4 V Reverse current VR = 4 V, TA = 65 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 4.8 5.3 5.8 VR = 3 V, f = 1 MHz 1.85 2.4 3.1 1.8 2.2 2.6 - rs - 0.37 - Ω CC - 0.12 - pF Ls - 1.8 - nH Capacitance ratio CT1/C T3 VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 CT pF 4 3 2 1 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V 3.0 VR Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -20-1998