TFDU7100 Vishay Semiconductors Infrared Transceiver Module (FIR, 4 Mbit/s) for IrDA® combined with Remote Control Receiver (36 kHz to 38 kHz Carrier) Description The TFDU7100 IrDA compliant transceiver is a multimedia module that supports IrDA data transfer up to 4 Mbit/s (FIR) and bidirectional Remote Control operating over a range of more than 18 m. Integrated within the transceiver are two PIN photodiodes, an infrared emitter (IRED) and two low-power control IC. It is ideal for applications requiring both Remote Control and IrDA communication. 19584 Features • Compliant to the latest IrDA physical layer specification (9.6 kbit/s to 4 Mbit/s) • TV Remote Control receiver with 18 m e3 receive range • Remote Control carrier frequency 36 kHz to 38 kHz • Operates from 2.7 V to 5.5 V within specification over full temperature range from - 25 °C to + 85 °C • Surface Mount Package, low profile (L 9.9 mm x 4.1 mm x 4 mm) • Compliant with IrDA Background Light Specification • EMI Immunity > 300 Vrms/m in GSM Bands verified (according IEC61000-4-3) • Lead (Pb)-free device • Qualified for lead (Pb)-free and Sn/Pb processing (MSL4) • Qualified for lead (Pb)-free and lead (Pb)-bearing soldering processes • Device in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC • Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US - Patent - No. 6,157,476 Applications • Remote control and IrDA communication in Multimedia • Notebook computers, Desktop PC’s, Internet TV Boxes, Video Conferencing Systems • Digital Still and Video Cameras • Printers, fax machines, Photocopiers, Screen Projectors Parts Table Description Qty/Reel TFDU7100-TR3 Part Oriented in carrier tape for side view surface mounting 1000 pcs TFDU7100-TT3 Oriented in carrier tape for top view surface mounting 1000 pcs Document Number 84773 Rev. 1.1, 27-Sep-06 www.vishay.com 1 TFDU7100 Vishay Semiconductors Functional Block Diagram Open Collector Output Amplifier Envelope Generator RC-RXD Push-Pull Driver Amplifier Comparator VCC2 RXD SD Logic & Controlled Driver Control TXD VCC1 GND 19597 Figure 1. Functional Block Diagram Pin Description Pin Number Function Description 1 VCC2 IRED Anode IRED anode to be externally connected to VCC2. An external resistor is only necessary for controlling the IRED current when a current reduction below 300 mA is intended. This pin is allowed to be supplied from an uncontrolled power supply separated from the controlled VCC1 - supply I/O Active 2 IRED Cathode IRED Cathode, internally connected to the driver transistor 3 TXD This Schmitt-Trigger input is used to transmit serial data when SD is low. An on-chip protection circuit disables the IRED driver if the TXD pin is asserted for longer than 80 μs. I HIGH 4 RXD Received Data Output, push-pull CMOS driver output capable of driving standard CMOS or TTL loads. During transmission the RXD output is active (echo-on). No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 kΩ (typ.) in shutdown mode. O LOW 5 SD Shutdown for IRDA channel only I HIGH 6 VCC1 Supply Voltage 7 RC-RXD Open Collector Output. This output is active during transmission (echo-on). External pull-up resistor to be added (e.g. 10 kΩ). O LOW 8 GND Ground www.vishay.com 2 Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Absolute Maximum Ratings Reference point Pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Max Unit Supply voltage range, transceiver Parameter - 0.3 V < VCC2 < 6 V Test Conditions VCC1 - 0.5 + 6.0 V Supply voltage range, transmitter - 0.5 V < VCC1 < 6 V VCC2 - 0.5 + 6.0 V Voltage at RXD - 0.5 V < VCC1 < 6.0 V VRXD - 0.5 VCC1 + 0.5 V Vin - 0.5 + 6.0 V 10 mA Voltage at all inputs and outputs Vin > VCC1 is allowed Input currents Typ. For all Pins, Except IRED Anode Pin Output sinking current Power dissipation see derating curve TJ Junction temperature Ambient temperature range (operating) Storage temperature range Soldering temperature PD 125 °C - 30 + 85 °C Tstg - 40 + 100 °C 260 °C IIRED (DC) 125 mA IIRED (RP) 700 mA Repetitive pulse output current, pin 1 to pin 2 < 0.3 µs, ton < 25 % Virtual source size Method: (1 - 1/e) encircled energy d Maximum Intensity for Class 1 IEC60825-1 or EN60825-1, edition Jan. 2001, operating below the absolute maximum ratings Ie *) mA mW Tamb See recommended solder profile (see figure 5) Average output current, pin 1 25 250 2.5 2.8 mm *) (500)**) mW/sr Due to the internal limitation measures the device is a "class1" device under all conditions. **) IrDA specifies the max. intensity with 500 mW/sr. Definitions: In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version. With introducing the updated versions the old versions are obsolete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4 (in Oct. 2002). Document Number 84773 Rev. 1.1, 27-Sep-06 www.vishay.com 3 TFDU7100 Vishay Semiconductors Electrical Characteristics Transceiver Tested at Tamb = 25 °C, VCC1 = VCC2 = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions Supply voltage klx**), Symbol Min VCC1 2.7 Typ. Max Unit 5.5 V Dynamic supply current SD = Low, Ee = 1 ICC1 5 mA Average dynamic supply current, transmitting IIRED = 300 mA, 25 % Duty Cycle ICC 6.5 mA Shutdown supply current*) SD = High, T = 25 °C, Ee = 0 klx ISD 2 mA TA - 30 + 85 °C Output voltage low, RXD Cload = 15 pF VOL - 0.5 0.15 x VCC1 V Output voltage high, RXD IOH = - 500 µA IOH = - 250 µA, Cload = 15 pF VOH 0.8 x VCC1 0.9 x VCC1 VCC1 + 0.5 V V RRXD 400 600 kΩ Input voltage low (TXD, SD) VIL - 0.5 0.5 V Input voltage high (TXD, SD) VIH VCC1 - 0.5 6 V -2 +2 µA + 150 µA 1 µA 5 pF VCC1 Operating temperature range RXD to VCC1 impedance Input leakage current (TXD, SD) Vin = 0.9 x Vlogic IICH Controlled pull down current SD, TXD = "0" or "1" 0 < Vin < 0.15 VCC1 IIrTX SD, TXD = "0" or "1" Vin > 0.7 VCC1 IIrTX Input capacitance (TXD, SD) *) 0 CI The Remote Control receiver is always on. The shutdown function is used for disabling the IrDA channel, only **) Standard Illuminant A www.vishay.com 4 -1 500 Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Optoelectronic Characteristics Receiver Tested at Tamb = 25 °C, VCC1 = vCC2 = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Minimum detection threshold irradiance, SIR mode*)**) Maximum irradiance in angular Test Conditions Symbol 9.6 kbit/s to 115.2 kbit/s λ = 850 nm - 900 nm α = 0°, 15° Ee 576 kbit/s to 4 Mbit/s λ = 850 nm - 900 nm α = 0°, 15° Ee λ = 850 nm - 900 nm Ee Min Typ. Max Unit 45 (4.5) 81 (8.1) mW/m2 100 (10) 190 (19) 5 (500) range***) (µW/cm2) mW/m2 (µW/cm2) kW/m2 (mW/cm2) Logic LOEW receiver input irradiance λ = 850 nm - 900 nm tr, tf < 40 ns, tpo = 1.6 µs at f = 115 kHz, no output signal allowed Rise time of output signal 10 % to 90 %, CL = 15 pF tr (RXD) 40 Fall time of output signal 90 % to 10 %, CL = 15 pF tf (RXD) 40 RXD pulse width of output signal, 50 % SIR Mode Input pulse length 1.4 µs < PWopt < 25 µs tPW Input pulse length 1.4 µs < PWopt < 25 µs - 25 °C < T < 85 °C**) tPW 1.5 1.8 2.6 µs RXD pulse width of output signal, 50 % MIR mode Input pulse length PWopt = 217 ns, 1.152 Mbit/s tPW 110 250 270 ns RXD pulse width of output signal, 50 % FIR mode Input pulse length PWopt = 125 ns, 4.0 Mbit/s tPW 100 140 ns Input pulse length PWopt = 250 ns, 4.0 Mbit/s tPW 225 275 ns tPW 225 275 ns Ee = 200 mW/m , 4 Mbit/s 20 ns Ee = 200 mW/m2, 1.152 kbit/s 40 ns Input irradiance = 100 mW/m2, 576 kbit/s 80 ns Ee = 200 mW/m2, ≤ 115.2 kbit/s 350 ns After completion of shutdown programming sequence Power on delay 500 µs Stochastic jitter, leading edge Receiver start-up time *) Ee 4 (0.4) 2 mW/m2 (µW/cm2) 2.1 ns ns µs IrDA low power specification is 90 mW/m2. Spec takes a window loss 10 % into account. **) IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length. ***) Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf). Document Number 84773 Rev. 1.1, 27-Sep-06 www.vishay.com 5 TFDU7100 Vishay Semiconductors Remote Control Receiver*) Tested at Tamb = 25 °C, VCC1 = vCC2 = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing Parameter Test Conditions Symbol Min Typ. Max Unit Minimum detection threshold irradianceRC λ = 950 nm α = 0°, 15°, RC5/RC6, 36 kHz EeRC 0.4 (0.04) Maximum detection threshold irradiance λ = 950 nm α = 0°, 15°, 36 kHz to 38 kHz EeRC 0.4 (0.04) 1 mW/m2 (µW/cm2) Minimum detection threshold irradiance) λ = 850 nm - 970 nm EeRC 0.4 (0.04) 2 mW/m2 (µW/cm2) Maximum detection threshold irradiance λ = 850 nm - 900 nm EeRCmax 30 Output voltage low, RC-RXD CLoad = 15 pF, RL = 10 kΩ∗∗) VOLRC - 0.5 Output voltage high, RC-RXD *) CLoad = 15 pF, RL = 10 kΩ∗∗) mW/m2 (µW/cm2) W/m2 0.15 x VCC1 VHLRC VCC1 V V Timing parameters are equivalent to TSOP1238, see that datasheet. **) The RC-RXD output is an open collector output, therefore a load resistor is mandatory. Optoelectronic Characteristics Transmitter Tested at Tamb = 25 °C, VCC1 = vCC2 = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing Symbol Min Typ. Max Unit IRED operating current limitation Parameter No external resistor for current limitation*) Test Conditions ID 450 550 650 mA IRED operating current limitation for low power FIR mode VCC2 = 3.3 V, RS = 18 Ω, Ie 10 ≥ mW/sr ID 90 mA Output leakage IRED current TXD = 0 V, 0 < VCC1 < 5.5 V IIRED -1 1 µA Output radiant intensity α = 0°, 15°, full IrDA cone, TXD = High, SD = Low, no external resistor for current limitation*) Ie 50 70 300 mW/sr α = 0° TXD = High, SD = Low, no external resistor for current limitation*) Ie 80 200 400 mW/sr VCC1 = 5.0 V, α = 0°, 15° TXD = Low or SD = High (Receiver is inactive as long as SD = High) Ie 0.04 mW/sr 900 nm Peak - emission wavelength**) λp Spectral bandwidth Δλ Optical overshoot 45 tropt, tfopt 10 Input pulse width 1.63 µs, 115.2 kbit/s (SIR) topt 1.6 Input pulse width 217 ns, 1.152 Mbit/s topt Input pulse width 125 ns, 4.0 Mbit/s nm 40 ns 1.63 1.75 µs 207 217 227 ns topt 117 125 133 ns Input pulse width 250 ns, 4.0 Mbit/s topt 242 250 258 ns Input pulse width 0.1 µs, < tTXD < 100 µs topt Input pulse width 0.1 µs, tTXD ≥ 100 µs topt Optical rise time, fall time Optical output pulse duration 880 tTXD tTXD µs 100 µs 25 % *) Using an external current limiting resistor is allowed and recommended to reduce IRED intensity and operating current when current reduction is intended to operate at the IrDA low power conditions. E.g. for VCC2 = 3.3 V a current limiting resistor of Rs = 56 Ω will allow a power minimized operation at IrDA low power conditions. **) Note: Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard Remote Control applications with codes as e.g. Philips RC5/RC6® or RECS 80. www.vishay.com 6 Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Recommended Circuit Diagram Operated at a clean low impedance power supply the TFDU7100 needs no additional external components beside a resistor at the open collector RC-RXD-output. However, depending on the entire system design and board layout, additional components may be required (see figure 2). VIRED R1 VCC R2 C1 IRED Anode VCC1 C2 GND R3 Ground RC-RXD RC-RXD SD SD TXD TXD RXD RXD IRED Cathode 19600 Figure 2. Recommended Application Circuit The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is the current limiting resistor, which may be used to reduce the operating current to levels below the specified controlled values for saving battery power. Vishay’s transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (TXD, SD) and the output RXD should be directly (DC) coupled to the I/O circuit. The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages VCCx and injected noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. An Tantalum capacitor should be used for C1 while a ceramic capacitor is used for C2. In addition, when connecting the described circuit to the power supply, low impedance wiring should be used. When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not apply to follow the fast current rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be helpful. The RC-RXD output is an open collector driver. Therefore it needs an external pull-up resistor of e.g. 10 kΩ (R3). Under extreme EMI conditions as placing an RFtransmitter antenna on top of the transceiver, we recommend to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the RXD port. The transceiver itself withstands EMI at GSM frequencies above 500 V/m. When interference is observed, it is picked up by the wiring to the inputs. It is verified by DPI measurements that as long as the interfering RF - voltage is below the logic threshold levels of the inputs and equivalent levels at the outputs no interference is expected. One should keep in mind that basic RF - design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. Recommended Application Circuit Components Component Recommended Value C1 4.7 µF, 16 V Vishay Part Number 293D 475X9 016B C2 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT R1 depends on current to be adjusted R2 47 Ω, 0.125 W CRCW-0805-47R R3 10 kΩ, 0.125 W CRCW-0805-10K Document Number 84773 Rev. 1.1, 27-Sep-06 www.vishay.com 7 TFDU7100 Vishay Semiconductors I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/ O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Mode Switching The TFDU7100 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity. To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. The SD-pulse duration for programming should be limited to a maximum of 5 µs avoiding that the transceiver goes into sleep mode. After that TXD is enabled as normal TXD input and the transceiver is set for the high bandwidth (576 kbit/ s to 4 Mbit/s) mode. Setting to the Lower Bandwidth Mode (2.4 kbit/s to 115.2 kbit/s) 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "LOW". Wait ts > 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. TXD must be held for th > 200 ns. After that TXD is enabled as normal TXD input and the transceiver is set for the lower bandwidth (9.6 kbit/s to 115.2 kbit/s) mode. 50 % SD ts th High : FIR 50 % TXD 50 % Low : SIR Setting to the High Bandwidth Mode (0.576 Mbit/s to 4.0 Mbit/s) 14873 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "HIGH". Wait ts > 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. After waiting th > 200 ns TXD can be set to logic "LOW". The hold time of TXD is limited by the maximum allowed pulse length. Figure 3. Mode Switching Timing Diagram Table 2. Truth table Inputs Remark TXD Optical input Irradiance mW/m2 RXD Transmitter RC-RXD high x x weakly pulled (500 kΩ to VCC1) 0 x low high x active low (echo) Ie x low high > 100 µs x high 0 x x low > specified RC sensitivity (RCprotocol) x 0 active low (envelope) low low <4 high 0 x low low > minimum irradiance in angular range (IrDA) < maximum irradiance in angular range (IrDA) low (active) 0 x low low > maximum irradiance in angular range (IrDA) x 0 x www.vishay.com 8 Outputs SD Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Recommended Solder Profiles on the packing and also in the application note "Taping, Labeling, Storage and Packing" (http://www.vishay.com/docs/82601/82601.pdf). 260 240 220 200 180 160 140 120 100 80 60 40 20 0 10 s max. at 230 °C 240 °C max. 275 2...4 °C/s T ≥ 255 °C for 10 s....30 s 250 160 °C max. 225 Tpeak = 260 °C T ≥ 217 °C for 70 s max 200 120 s...180 s 90 s max. Temperature/°C Temperature (°C) Solder Profile for Sn/Pb Soldering 2...4 °C/s 175 150 30 s max. 125 100 90 s...120 s 70 s max. 2 °C...4 °C/s 75 0 50 100 19535 150 200 250 300 350 2 °C...3 °C/s 50 Time/s 25 Figure 4. Recommended Solder Profile for Sn/Pb soldering 0 0 Wave Soldering For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended. Manual Soldering Manual soldering is the standard method for lab use. However, for a production process it cannot be recommended because the risk of damage is highly dependent on the experience of the operator. Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. Storage The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data for the drying procedure is given on labels Document Number 84773 Rev. 1.1, 27-Sep-06 100 150 200 Time/s 250 300 350 Figure 5. Solder Profile, RSS Recommendation 280 Tpeak = 260 °C max 260 240 220 200 Temperature/°C 180 < 4 °C/s 160 1.3 °C/s 140 120 Time above 217 °C t ≤ 70 s Time above 250 °C t ≤ 40 s Peak temperature Tpeak = 260 °C 100 80 < 2 °C/s 60 40 20 0 0 50 100 150 200 250 300 Time/s Figure 6. RTS Recommendation Current Derating Diagram Figure 7 shows the maximum operating temperature when the device is operated without external current limiting resistor. 90 Ambient Temperature (°C ) Lead (Pb)-Free, Recommended Solder Profile The TFDU7100 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow profiles: Ramp-SoakSpike (RSS) and Ramp-To-Spike (RTS). The RampSoak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-ToSpike profile is used increasingly. Shown below in figure 5 and 6 are VISHAY's recommended profiles for use with the TFDU7100 transceivers. For more details please refer to the application note “SMD Assembly Instructions” (http://www.vishay.com/docs/82602/82602.pdf). A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. 50 19532 85 80 75 70 65 60 55 50 2.0 18097 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Operating Voltage [V] at duty cycle 20 % Figure 7. Current Derating Diagram www.vishay.com 9 TFDU7100 Vishay Semiconductors Optical Window For the design of the optical windows see application note “Window Size in Housings” TFDU7100 - (Universal) Package 19586 Figure 8. Package drawing TFDU7100, dimensions in mm, tolerance ± 0.2 if not otherwise mentioned 7x1=7 0.6 2.5 1 8 1 19587 Figure 9. Recommended solder pad layout www.vishay.com 10 Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Tape and Reel Reel dimensions Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05 14017 Figure 10. Reel dimensions, tolerance ± 0.2 mm, if not otherwise mentioned Tape Width A max. N W1 min. W2 max. W3 min. mm mm mm mm mm mm mm 24 330 60 24.4 30.4 23.9 27.4 Document Number 84773 Rev. 1.1, 27-Sep-06 W3 max. www.vishay.com 11 TFDU7100 Vishay Semiconductors Tape Dimensions 19819 Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 Figure 11. Tape dimensions, tolerance ± 0.2 mm, if not otherwise mentioned www.vishay.com 12 Document Number 84773 Rev. 1.1, 27-Sep-06 TFDU7100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 84773 Rev. 1.1, 27-Sep-06 www.vishay.com 13 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1