TFDU4101 Vishay Semiconductors Infrared Transceiver Module (SIR, 115.2 kbit/s) for IrDA® Applications Description The TFDU4101 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 115.2 kbit/s (SIR), and carrier based remote control modes. Integrated within the transceiver module are a photo PIN diode, an infrared emitter (IRED), and a low-power control IC to provide a total front-end solution in a single package. This device covers the full IrDA range of more than 1 m using the internal intensity control. With one external current control resistor the current can be adjusted for shorter ranges saving operating current operating in IrDA low power mode. This Vishay SIR transceiver is using the lead frame technology. The receiver output pulse duration is independent of 20110 the optical input pulse duration and recovers always a fixed pulse duration optimum for compatibility to standard Endecs and interfaces. TFDU4101 has a tristate output and is floating in shutdown mode with a weak pull-up. Features • Operates from 2.4 V to 3.6 V within specification over full temperature range from - 30 °C to + 85 °C e3 • Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US - Patent No. 6,157,476 • Low power consumption (< 0.12 mA supply current in receive mode, no signal) • Power shutdown mode (< 4 µA shutdown current in full temperature range, up to 85 °C, < 10 nA at 25 °C) • Surface mount 4-mm package L 9.7 mm × W 4.7 mm × H 4.0 mm • High efficiency emitter • Low profile (universal) package capable of surface mount soldering to side and top view orientation • Directly Interfaces with various Super I/O and controller devices as e. g. TOIM4232 • Tri-state-Receiver Output, floating in shut down with a weak pull-up • Lead (Pb)-free device • Qualified for lead (Pb)-free and Sn/Pb processing (MSL4) • Device in accordance with RoHS 2002/95/EC and WEEE 2002/96EC Applications • Printers, fax machines, photocopiers, screen projectors • Internet TV boxes, video conferencing systems • Medical data collection • Diagnostic systems • Notebook computers, desktop PCs, Palmtop computers (Win CE, Palm PC), PDAs • • • • • • Internet TV Boxes, video conferencing systems External infrared adapters (dongles) Data loggers GPS Kiosks, POS, Point and Pay devices Industrial applications Parts Table Part TFDU4101-TR3 TFDU4101-TT3 Document Number 81288 Rev. 1.0, 11-Jul-06 Description Qty / Reel Oriented in carrier tape for side view surface mounting Oriented in carrier tape for top view surface mounting 1000 pcs 1000 pcs www.vishay.com 171 TFDU4101 Vishay Semiconductors Functional Block Diagram Vcc1 Tri-State Driver Amplifier RXD Comparator Vcc2 Logic & SD Controlled Driver Control TXD IRED C GND 18468 Pin Description Pin Number "U" 1 Function Description I/O Active IRED anode to be externally connected to VCC2. An external resistor is only VCC2 IRED Anode necessary for controlling the IRED current when a current reduction below 300 mA is intended to operate in IrDA low power mode. This pin is allowed to be supplied from an uncontrolled power supply separated from the controlled VCC1 - supply. 2 IRED Cathode IRED cathode, internally connected to driver transistor 3 TXD This Schmitt-Trigger input is used to transmit serial data when SD is low. An on-chip protection circuit disables the LED driver if the TXD pin is asserted for longer than 50 µs (max 300 µs). I HIGH 4 RXD Received Data Output, push-pull CMOS driver output capable of driving standard CMOS or TTL loads. During transmission the RXD output is inactive. No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 kΩ (typ.) in shutdown mode. O LOW I HIGH 5 SD Shutdown 6 VCC1 Supply Voltage 7 NC No internal connection 8 GND Ground I Pinout TFDU4101 weight 200 mg "U" Option BabyFace (Universal) IRED 1 2 3 4 5 6 Detector 7 8 17087 www.vishay.com 172 Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Absolute Maximum Ratings Reference point Pin, GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Max Unit Supply voltage range, transceiver Parameter - 0.3 V < VCC2 < 6.0 V Test Conditions VCC1 - 0.5 6.0 V Supply voltage range, transmitter - 0.5 V < VCC1 < 6.0 V VCC2 - 0.5 6.0 V Voltage at RXD - 0.5 V < VCC1 < 6.0 V VRXD - 0.5 VCC1 + 0.5 V Vin - 0.5 6.0 V 10 mA Voltage at all inputs and outputs Vin > VCC1 is allowed Input currents Typ. For all Pins, Except IRED Anode Pin Output sinking current Power dissipation See Derating Curve Junction temperature Storage temperature range Repetitive pulse output current, pin 1 to pin 2 < 90 µs, ton < 20 % mA mW 125 °C - 30 + 85 °C Tstg - 30 + 85 °C 260 °C IIRED (DC) 80 mA IIRED (RP) 400 mA Max Unit See “Recommended Solder Profile” Average output current, pin 1 25 250 Tamb TJ Ambient temperature range (operating) Soldering temperature PD Eye safety information Reference point Pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Virtual source size Parameter Method: EN ISO 11146 d 2.6 Maximum Intensity for Class 1 IEC60825-1 or EN60825-1, edition Jan. 2001 operating below the absolute maximum ratings Ie *) Test Conditions Typ. mm *) (500)**) mW/sr Due to the internal limitation measures the device is a "class1" device under all conditions **) IrDA specifies the max. intensity with 500 mW/sr Definitions: In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy: 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with the physical layer standard IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version. Note: We apologize to use sometimes in our documentation the abbreviation LED and the word Light Emitting Diode instead of Infrared Emitting Diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time. Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 173 TFDU4101 Vishay Semiconductors Electrical Characteristics Transceiver Tamb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions/Pins Supply voltage Dynamic supply current Symbol Min VCC1 2.4 Typ. Max Unit 5.5 V 130 µA SD = Low, Ee = 1 Tamb = - 25 °C to + 85 °C Vcc1 = VCC2 = 2.4 V to 5.5 V ICC1 90 Dynamic supply current SD = Low, Ee = 1 klx*), Tamb = 25 °C Vcc1 = VCC2 = 2.4 V to 5.5 V ICC1 75 Average dynamic supply current, transmitting IIRED = 300 mA, 25 % Duty Cycle ICC 0.65 mA Shutdown supply current SD = High, T = 25 °C, Ee = 0 klx No signal, no resistive load ISD 0.1 µA SD = High, T = 70 °C No signal, no resistive load ISD 3 µA SD = High, T = 85 °C No signal, no resistive load ISD 4 µA TA - 30 + 85 °C Output voltage Low, RXD Cload = 15 pF VOL - 0.5 0.15 x VCC1 V Output voltage High, RXD IOH = - 500 µA, CLoad = 15 pF VOH 0.8 x VCC1 VCC1 + 0.5 V klx*), Operating temperature range IOH = - 250 µA, CLoad = 15 pF VCC1 + 0.5 V 600 kΩ - 0.5 0.5 V VIH 0.8 x VCC1 6 V VIH VCC1 - 0.5 6 V Input leakage current (TXD, SD) Vin = 0.9 x VCC1 IICH -2 +2 µA Controlled pull down current 0 < Vin < 0.15 VCC1 Vin > 0.7 VCC1 IIrTX + 150 1 µA µA 5 pF RXD to VCC1 impedance Input voltage low (TXD, SD) Input voltage High (TXD, SD) 1.5 V ≤ Vlogic ≤ 2.5 Vlogic > 2.5 Input capacitance (TXD, SD) *) V**) V**) SD, TXD = "0" or "1" VOH 0.9 x VCC1 RRXD 400 VIL µA -1 CI 500 0 Standard Illuminant A **) The typical threshold level is 0.5 x VCC1. It is recommended to use the specified min/ max values to avoid increased operating current. www.vishay.com 174 Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Optoelectronic Characteristics Receiver Tamb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Minimum irradiance Ee in angular range**) SIR mode Minimum irradiance Ee in angular range Test Conditions 9.6 kbit/s to 115.2 kbit/s λ = 850 nm to 900 nm; α = 0°, 15° Symbol Min Typ. Max Unit Ee 4 (0.4) 20 (2) 35*) (3.5) mW/m2 (µW/cm2) Ee 5 (500) λ = 850 nm to 900 nm kW/m2 (µW/cm2) Rise time of output signal 10 % to 90 %, CL = 15 pF tr (RXD) 20 100 Fall time of output signal 90 % to 10 %, CL = 15 pF tf (RXD) 20 100 ns RXD pulse width input pulse length > 1.2 µs tPW 1.65 3.0 µs Leading edge jitter Input Irradiance = 100 mW/m2, ≤ 115.2 kbit/s 250 ns Standby /Shutdown delay, receiver startup time After shutdown active or power-on 150 µs 150 µs Latency *) tL 2.2 100 ns IrDA specification is 40 mW/m2. Specification takes a window loss of 10 % into account. **) IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length ***) Maximum Irradiance Ee In Angular Range, power per unit area. The optical power delivered to the detector by a source operating at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf). Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 175 TFDU4101 Vishay Semiconductors Optoelectronic Characteristics, continued Transmitter Tamb = 25 °C, VCC1 =VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter IRED operating current, switched current limiter Test Conditions No external resistor for current Symbol Min Typ. Max Unit ID 250 300 350 mA 1.8 1.9 V 1 µA limitation*) Forward voltage of built-in IRED If = 300 mA Output leakage IRED current Vf 1.4 IIRED -1 48 Output radiant intensity α = 0°, 15° TXD = High, SD = Low Ie Output radiant intensity VCC1 = 5.0 V, α = 0°, 15° TXD = Low or SD = High (Receiver is inactive as long as SD = High) Ie Output radiant intensity, angle of half intensity α Peak - emission wavelength**) λp Optical rise time, Optical fall time ± 24 880 mW/sr deg 900 45 nm nm tropt, tfopt 10 100 ns tTXD - 0.15 tTXD + 0.15 µs 300 µs 25 % Optical output pulse duration input pulse width 1.6 µs < tTXD < 20 µs topt Optical output pulse duration input pulse width tTXD ≥ 20 µs topt Optical overshoot mW/sr 0.04 Δλ Spectral bandwidth 65 20 *) Using an external current limiting resistor is allowed and recommended to reduce IRED intensity and operating current when current reduction is intended to operate at the IrDA low power conditions. E. g. for VCC2 = 3.3 V a current limiting resistor of Rs = 56 Ω will allow a power minimized operation at IrDA low power conditions. **) Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard Remote Control applications with codes as e. g. Philips RC5/RC6® or RECS 80. www.vishay.com 176 Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Recommended Circuit Diagram Operated with a clean low impedance power supply the TFDU4101 needs no additional external components. However, depending on the entire system design and board layout, additional components may be required (see figure 1). That is especially the case when separate power supplies are used for bench tests. When using compact wiring and regulated supplies as e. g. in phone applications in most cases no external components are necessary. VIRED R1 *) VCC VCC2 , IRED A VCC1 R2 C1 GND C2 Ground SD SD TXD TXD RXD RXD IRED C 20037 Figure 1. Recommended test circuit. *) R1 is optional when reduced intensity is used. The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is the current limiting resistor, which may be used to reduce the operating current to levels below the specified controlled values for saving battery power. VISHAY's transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The shutdown input must be grounded for normal operation, also when the shutdown function is not used. The inputs (TXD, SD) and the output RXD should be directly connected (DC - coupled) to the I/O circuit. The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages VCC1 and injected noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. When extended wiring is used (bench tests!) the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not able to follow the fast current rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be helpful. Under extreme EMI conditions as placing an RFtransmitter antenna on top of the transceiver, we recommend to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the RXD port. The transceiver itself withstands EMI at GSM frequencies above 500 V/m. When interference is observed, the wiring to the inputs picks it up. It is verified by DPI measurements that as long as the interfering RF - voltage is below the logic threshold levels of the inputs and equivalent levels at the outputs no interferences are expected. One should keep in mind that basic RF - design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. Table 1. Recommended Tests and Application Circuit Components Component Recommended Value C1 4.7 µF, 16 V 293D 475X9 016B C2 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT R1 depends on current to be adjusted, e. g. with VCC2 = 3.3 V 56 Ω is an option for minimum low power operation R2 Document Number 81288 Rev. 1.0, 11-Jul-06 Vishay Part Number 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1 www.vishay.com 177 TFDU4101 Vishay Semiconductors Figure 2 shows an example of a typical application with a separate supply voltage VS and using the transceiver with the IRED Anode connected to the unregulated battery Vbatt. This method reduces the peak load of the regulated power supply and saves therefore costs. Alternatively all supplies can also be tied to only one voltage source. R1 and C1 are not used in this case and are depending on the circuit design in most cases not necessary. In figure 2 an option is shown to operate the transmitter at two different power levels to switch for long range to low power mode for e.g. saving power for IrDA application but use the full range specification for Remote Control. The additional components are marked in the figure. For operating at RS232 ports TOIM4232 is recommended as ENDEC. I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Current Derating Diagram Figure 3 shows the maximum operating temperature when the device is operated without external current limiting resistor. Vbatt ≈ 3 V Hi/Low C1 R1 Vs = 2.8 V Vdd IRTX IRRX IR MODE R2 IRED Anode (1) IRED Cathode (2) TXD (3) RXD (4) SD (5) Vcc1 (6) C2 GND (8) 20038 Ambient Temperature (°C) 90 85 80 75 70 65 60 55 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Operating Voltage [V] at duty cycle 20 % 18097 Figure 3. Current Derating Diagram Figure 2. Typical application circuit. Grey: Optional for Hi/Low switching. Table 2. Truth table Inputs Remark TXD Optical input Irradiance mW/m2 RXD Transmitter high > 1 ms x x weakly pulled (500 kΩ) to VCC1 0 Shutdown Transmitting low www.vishay.com 178 Outputs SD Operation high < 50 µs x low active Ie high > 50 µs x low active 0 Protection is active low <4 high inactive 0 Ignoring low signals below the IrDA defined threshold for noise immunity low > Min. irradiance Ee < Max. irradiance Ee low (active) 0 Response to an IrDA compliant optical input signal low > Max. irradiance Ee undefined 0 Overload conditions can cause unexpected outputs Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Recommended Solder Profiles Storage The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data for the drying procedure is given on labels on the packing and also in the application note "Taping, Labeling, Storage and Packing" (http://www.vishay.com/docs/82601/82601.pdf). 260 240 220 200 180 160 140 120 100 80 60 40 20 0 10 s max. at 230 °C 240 °C max. 2...4 °C/s 160 °C max. 120 s...180 s 90 s max. 2...4 °C/s 275 T ≥ 255 °C for 10 s....30 s 250 225 0 50 100 19535 150 200 250 300 350 Time/s Figure 4. Recommended Solder Profile for Sn/Pb soldering Tpeak = 260 °C T ≥ 217 °C for 70 s max 200 Temperature/°C Temperature (°C) Solder Profile for Sn/Pb Soldering 175 150 30 s max. 125 100 90 s...120 s 70 s max. 2 °C...4 °C/s 75 2 °C...3 °C/s 50 25 0 0 50 100 150 200 Time/s 19532 250 300 350 Figure 5. Solder Profile, RSS Recommendation 280 Tpeak = 260 °C max 260 240 220 200 180 Temperature/°C Lead (Pb)-Free, Recommended Solder Profile The TFDU4101 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow profiles: Ramp-SoakSpike (RSS) and Ramp-To-Spike (RTS). The RampSoak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-ToSpike profile is used increasingly. Shown below in figure 5 and 6 are VISHAY's recommended profiles for use with the TFDU4101 transceivers. For more details please refer to the application note “SMD Assembly Instructions” (http://www.vishay.com/docs/82602/82602.pdf). A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. < 4 °C/s 160 1.3 °C/s 140 120 Time above 217 °C t ≤ 70 s Time above 250 °C t ≤ 40 s Peak temperature Tpeak = 260 °C 100 80 < 2 °C/s 60 40 20 0 0 50 100 150 200 250 300 Time/s Wave Soldering For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended. Figure 6. RTS Recommendation Manual Soldering Manual soldering is the standard method for lab use. However, for a production process it cannot be recommended because the risk of damage is quite highly depending on the experience of the operator. Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 179 TFDU4101 Vishay Semiconductors Package Dimensions in mm 7x1=7 0.6 2.5 1 8 1 18470 Figure 7. Package drawing TFDU6103, dimensions in mm, tolerance ± 0.2 mm if not otherwise mentioned www.vishay.com 180 Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors 20035 Figure 8. Recommended footprint for side view applications and solderpaste mask 20036 Figure 9. Recommended footprint for top view applications and solderpaste mask Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 181 TFDU4101 Vishay Semiconductors Reel Dimensions Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05 14017 Tape Width A max. N mm mm mm mm mm mm mm 24 330 60 24.4 30.4 23.9 27.4 www.vishay.com 182 W1 min. W2 max. W3 min. W3 max. Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Tape Dimensions 19824 Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 Figure 10. Tape drawing, TFDU6103 for top view mounting, tolerance ± 0.1 mm Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 183 TFDU4101 Vishay Semiconductors Tape Dimensions 19875 Drawing-No.: 9.700-5297.01-4 Issue: 1; 04.08.05 Figure 11. Tape drawing, TFDU6103 for side view mounting, tolerance ± 0.1 mm www.vishay.com 184 Document Number 81288 Rev. 1.0, 11-Jul-06 TFDU4101 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81288 Rev. 1.0, 11-Jul-06 www.vishay.com 185 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1